Results 201 to 210 of about 1,939,285 (262)

HIV-1 subtype-specific drug resistance on dolutegravir-based antiretroviral therapy: protocol for a multicentre longitudinal study (DTG RESIST)

Egger M, Sauermann M, Loosli T, Hossmann S, Riedo S, Beerenwinkel N, Jaquet A, Minga A, Ross JL, Giandhari J, Kouyos R, Lessells R.   +11 more
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Low specific on-resistance 400V LDMOST

1981 International Electron Devices Meeting, 1981
A readily integratable high voltage lateral DMOS (LDMOST) has been developed which has both as low or lower specific on-resistance and lower input capacitance as compared to the same breakdown voltage vertical transistors. The LDMOST has been designed for a reverse breakdown voltage V DSS = 400V.
E.H. Stupp, S. Colak, J. Ni
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Towards ultimate scaling of LDMOS with Ultralow Specific On-resistance

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020
This paper presents the silicon demonstration of a novel Trench MOSFET with ultra-low specific on-resistance Ron*A. With drain and source contact placement at the top silicon surface, our device combines the benefits of vertical current flow as leveraged in discrete power devices with ease of CMOS platform integration that has been a key advantage of ...
Saumitra Mehrotra, Ljubo Radic, Bernhard Grote, Tanuj Saxena, Ganming Qin, Vishnu Khemka, Tania Thomas, Mark Gibson   +7 more
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Comparison of Ultralow Specific On-Resistance UMOSFET Structures

50th Annual Device Research Conference, 1992
Summary form only given. The authors describe three novel UMOSFET structures, called the accumulation, inversion, and extended trench field-effect transistors (ACCUFET, INVFET, EXTFET). The principal difference between these structures and the conventional UMOSFET is that the trench (UMOS) gate extends all the way down to the n/sup +/ substrate.
T. Syau, P. Venkatraman, B.J. Baliga
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Ultra low specific on-resistance UMOS FET

1986 International Electron Devices Meeting, 1986
This paper describes an improved UMOS FET with an ultra low specific on-resistance. This device utilizes a self-aligned process which permits closed spaced vertical trench gates with a unit cell of 6 µm. This allows for a remarkable increase of channel density and therefore, reduces the on-resistance per unit area significantly.
H-R. Chang, R.D. Black, V.A.K. Temple, W. Tantraporn, B.J. Baliga   +4 more
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Ultralow specific on-resistance trench lateral power MOSFETs

2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014
Optimizing the trade-off relationship between the off-state breakdown voltage (BV) and specific on-resistance (R on,sp ) is the main concern for power MOSFETs. For lateral power MOSFETs, the trench technology exhibits significant improvements in the BV and R on,sp by reducing the device pitch and increasing the channel density, and thus improves the ...
Xiaorong Luo, Kun Zhou, Zhaoji Li, Bo Zhang   +3 more
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Comparison of lateral and vertical DMOS specific on-resistance

1985 International Electron Devices Meeting, 1985
The specific on-resistance characteristics of the lateral and vertical DMOS transistors are compared for voltages between 50 and 800 volts. The vertical DMOS transistor's breakdown and on-resistance relationship is reviewed, followed by modeling results of the lateral DMOS transistor's breakdown and on-resistance characteristics. A direct comparison is
M. Amato, V. Rumennik
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Diamond Schottky barrier diodes with low specific on-resistance

Semiconductor Science and Technology, 2005
We have fabricated sandwich-type diamond Schottky barrier diodes with high current density on an undoped homoepitaxial diamond film grown on a heavily boron-doped type Ib diamond substrate. The current–voltage measurements for the diodes show excellent rectification characteristics in a temperature range of 298–873 K.
Yigang Chen, Masahiko Ogura, Toshiharu Makino, Satoshi Yamasaki, Hideyo Okushi   +4 more
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The Minimum Specific on-Resistance of Semi-SJ Device

IEEE Transactions on Electron Devices, 2019
The minimum specific ON-resistance $\text{R}_{ \mathrm{\scriptscriptstyle ON},\textsf {sp}}$ of the semisuperjunction (semi-SJ) device is realized in this paper. Based on the similar SJ optimization method in our previous works, the minimum $\text{R}_{ \mathrm{\scriptscriptstyle ON},\textsf {sp}}$ of the semi-SJ is searched by optimizing ...
Wentong Zhang, Chunlan Lai, Ming Qiao, Zhaoji Li, Bo Zhang   +4 more
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