Results 211 to 220 of about 1,939,285 (262)

Ultralow Specific On-Resistance High-Voltage SOI Lateral MOSFET

IEEE Electron Device Letters, 2011
An ultralow specific on-resistance (Ron,sp) integrable silicon-on-insulator (SOI) power lateral MOSFET is proposed. The MOSFET features double trenches: an oxide trench in the drift region and a trench gate extended to the buried oxide (BOX) (SOI DT MOSFET).
Xiaorong Luo, Jie Fan, Yuangang Wang, Tianfei Lei, Ming Qiao, Bo Zhang, Florin Udrea   +6 more
openaire   +1 more source

Low Specific On-Resistance AlGaN/GaN HEMT on Sapphire Substrate

2006 IEEE International Symposium on Power Semiconductor Devices & IC's, 2006
On-resistance of AlGaN/GaN HEMTs with MIS and MES gate structures has been investigated. In the case of the MES gate structure, the HEMT with specific on-resistance lower than 0.1 mOmegacm2 was obtained by shortening the drain-source length to 2.2 mum.
M. Inada, S. Yagi, Y. Yamamoto, null Guanxi Piao, M. Shimizu, H. Okumura, K. Arai, Y. Yano, N. Akutsu   +8 more
openaire   +1 more source

Improved theoretical minimum of the specific on-resistance of a superjunction

Semiconductor Science and Technology, 2020
Abstract We derive simple closed-form solutions for the optimum pillar parameters—length L opt, width 2W opt and doping N opt of a superjunction. The parameters yield the minimum specific on-resistance, R ONSP, for a target breakdown voltage, V BR ...
K Akshay, Shreepad Karmalkar
openaire   +1 more source

An LDMOS with large SOA and low specific on-resistance

Journal of Semiconductors, 2016
An LDMOS with nearly rectangular-shape safe operation area (SOA) and low specific on-resistance is proposed. By utilizing a split gate, an electron accumulation layer is formed near the surface of the n-drift region to improve current conduction capability during on-state operation.
Wenfang Du, Xinjiang Lyu, Xingbi Chen
openaire   +1 more source

Challenges in Extremely Low Specific On-Resistance with SiC SJ-VMOSFETs

Materials Science Forum, 2020
A 0.63 mΩcm2 / 1170 V property was demonstrated in a 4H-SiC V-groove trench MOSFET with a super junction (SJ) structure. Successful results in SJ-VMOSFETs will inspire research on 600 to 1200 V class devices as their extreme high MOS channel mobility and the SJ structure is promising.
Takeyoshi Masuda, Yu Saito, Tomoaki Hatayama, Hisato Michikoshi, Yasuki Mikamura, Shinsuke Harada   +5 more
openaire   +1 more source

Record low specific on-resistance for low-voltage trench MOSFETs

IEE Proceedings - Circuits, Devices and Systems, 2004
A process is shown by which both the specific on-resistance R/sub ds,on/ and the gate-drain charge density Q/sub gd/ can be reduced. Reduction of R/sub ds,on/ is achieved by optimising the channel profile (p-body) towards a more box-shaped profile. Q/sub gd/ is reduced by reducing the gate-trench widths below the I-line lithography limits, without ...
M.A.A. in't Zandt, E.A. Hijzen, R.J.E. Hueting, G.E.J. Koops   +3 more
openaire   +1 more source

Optimization of the Specific On-Resistance of 4H-SiC BJTs

Materials Science Forum, 2006
We evaluate the performance capabilities and limitations of high voltage 4H-SiC based Bipolar Junction Transistors (BJTs). Experimental forward characteristics of a 4kV BJT are studied and simulations are employed to determine the factors behind the higher than expected specific onresistance (Ron,sp) for the device.
S. Balachandran, T.P. Chow, Anant Agarwal   +2 more
openaire   +1 more source

1.4 kV 4H-SiC UMOSFET with low specific on-resistance

Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212), 2002
A device concept for an SiC MOSFET of 5 kV/spl middot/3 kA class is proposed. As the first step in developing the device, a 2 kV SiC UMOSFET with a punch-through structure has been designed and fabricated. The fabricated UMOSFET has a high breakdown voltage of 1.4 kV and a low specific on-resistance of 311 m/spl Omega//sup ./cm/sup 2/ at room ...
Y. Sugawara, K. Asano
openaire   +1 more source

Power Trench MOSFETs with very low specific on-resistance for 25V applications

Solid-State Electronics, 2006
Abstract In this paper, an investigation of the benefits of deep ultra violet lithography for the manufacturing of Trench MOSFETs and its impact on device performance is presented. We discuss experimental results for devices with a pitch size down to 0.6 μm fabricated with an unconventional implant topology and a simplified manufacturing scheme.
Pierre Goarin, Rob van Dalen, Gerhard Koops, Christelle Le Cam   +3 more
openaire   +1 more source

Ultralow specific ON-resistance high-k LDMOS with vertical field plate

Journal of Semiconductors, 2018
An ultralow specific on-resistance high-k LDMOS with vertical field plate (VFP HK LDMOS) is proposed. The high-k dielectric trench and highly doped interface N+ layer are made in bulk silicon to reduce the surface field of the drift region in the VFP HK LDMOS.
Lijuan Wu, Limin Hu, Lin Zhu, Hang Yang, Bing Lei, Haiqing Xie   +5 more
openaire   +1 more source