Results 1 to 10 of about 3,229 (135)

Enhanced Field‐Like Torque Generated from the Anisotropic Spin‐Split Effect in Triple‐Domain RuO2 for Energy‐Efficient Spin–Orbit Torque Magnetic Random‐Access Memory [PDF]

open access: yesAdvanced Science
Spin‐current generation via the anisotropic spin‐split effect has been predicted in antiferromagnetic RuO2, where the symmetry of RuO2 plays a critical role in spin–orbit torque (SOT).
Thi Van Anh Nguyen   +8 more
doaj   +2 more sources

Interlayer Dzyaloshinskii–Moriya Interaction in Synthetic Ferrimagnets for Spiking Neural Networks [PDF]

open access: yesAdvanced Science
Interlayer Dzyaloshinskii–Moriya interaction (IL‐DMI) in synthetic magnetic structures has attracted extensive interest for greatly facilitating deterministic spin‐orbit torque (SOT)‐driven information writing and topologically non‐trivial 3D magnetic ...
Shen Li   +14 more
doaj   +2 more sources

Performing Stateful Logic Using Spin-Orbit Torque (SOT) MRAM

open access: yes2022 IEEE 22nd International Conference on Nanotechnology (NANO), 2022
Stateful logic is a promising processing-in-memory (PIM) paradigm to perform logic operations using emerging nonvolatile memory cells. While most stateful logic circuits to date focused on technologies such as resistive RAM, we propose two approaches to designing stateful logic using spin orbit torque (SOT) MRAM.
Hoffer, Barak, Kvatinsky, Shahar
openaire   +2 more sources

Spin–orbit torque characterization in a nutshell

open access: yesAPL Materials, 2021
Spin current and spin torque generation through the spin–orbit interactions in solids, of bulk or interfacial origin, is at the heart of spintronics research.
Minh-Hai Nguyen, Chi-Feng Pai
doaj   +1 more source

Electric Field Control of Spin–Orbit Torque Magnetization Switching in a Spin–Orbit Ferromagnet Single Layer

open access: yesAdvanced Science, 2023
To achieve a desirable magnitude of spin–orbit torque (SOT) for magnetization switching and realize multifunctional spin logic and memory devices utilizing SOT, controlling the SOT manipulation is vitally important.
Miao Jiang   +3 more
doaj   +1 more source

Spin–orbit torques in normal metal/Nb/ferromagnet heterostructures

open access: yesScientific Reports, 2021
Quantifying the spin–orbit torque (SOT) efficiency with changing the layer thickness is crucial for understanding the physical background of SOT. This study investigates the Nb-thickness-dependent SOT efficiency of two types of layered heterostructures ...
Min Hyeok Lee   +7 more
doaj   +1 more source

Composition dependence of spin–orbit torques in PtRh/ferromagnet heterostructures

open access: yesAPL Materials, 2021
We experimentally study the spin–orbit torque (SOT) in PtRh/heterostructures by varying the composition of PtRh alloy. By performing dc-biased spin-torque ferromagnetic resonance and second-harmonic measurements in PtxRh1−x/ferromagnet heterostructures ...
Guoyi Shi   +5 more
doaj   +1 more source

Giant field-like torque by the out-of-plane magnetic spin Hall effect in a topological antiferromagnet

open access: yesNature Communications, 2021
Conventional spin-orbit torque (SOT) enables electrical control of in-plane spins, not suitable for perpendicular magnetization. Here, the authors observe a large magnetic-field-like SOT due to a large out-of-plane spin accumulation in topological ...
Kouta Kondou   +7 more
doaj   +1 more source

High Performance Spin-Orbit-Torque (SOT) Based Non-volatile Standard Cell for Hybrid CMOS/Magnetic ICs [PDF]

open access: yesComputer Science and Information Technology, 2017
Spin-orbit-torque magnetic tunnel junction (SOT-MTJ) is an emergent spintronics device with a promising potential. It resolves many issues encountered in the current MTJs state of the art. Although the existing Spin Transfer Torque (STT) technology is advantageous in terms of scalability and writing current, it suffers from the lack of reliability ...
Jabeur, Kotb   +2 more
openaire   +3 more sources

Switching performance comparison between conventional SOT and STT-SOT write schemes with effect of shape deformation

open access: yesAIP Advances, 2021
We demonstrate the effect of shape deformation in spin–orbit torque magnetoresistive random access memory (SOT-MRAM) based on micromagnetic simulation by generating 1000 randomly deformed samples using the exponentially decaying autocorrelation function.
J. Byun, D. H. Kang, M. Shin
doaj   +1 more source

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