Results 11 to 20 of about 3,266 (171)

Current Switching of Topological Spin Chirality in the van der Waals Antiferromagnet Co<sub>1/3</sub>TaS<sub>2</sub>. [PDF]

open access: yesAdv Mater
Spin chirality plays a central role in quantum magnetism, governing spin winding and generating real‐space Berry phases. We propose the intriguing concept of current‐switching spin chirality and demonstrate it via unconventional intrinsic self‐spin‐orbit‐torque in pristine Co1/3TaS2, purely by electrical current and with high energy efficiency.
Zhang KX, Lee S, Cho W, Park JG.
europepmc   +2 more sources

Field-free switching model of spin–orbit torque (SOT)-MTJ device with thermal effect based on voltage-controlled magnetic anisotropy (VCMA)

open access: yesAIP Advances, 2023
Electrically driven magnetization switch has attracted much attention in the new spintronic memory, especially for spin–orbit torque (SOT)-based magnetic random access memory (MRAM). However, the published models are facing limitations with the continuous shrinkage of the feature size down to nanoscale.
Shaomin Li, Yanfeng Jiang
openaire   +2 more sources

Critical switching current density of magnetic tunnel junction with shape perpendicular magnetic anisotropy through the combination of spin-transfer and spin-orbit torques

open access: yesScientific Reports, 2021
Recently, magnetic tunnel junctions (MTJs) with shape perpendicular magnetic anisotropy (S-PMA) have been studied extensively because they ensure high thermal stability at junctions smaller than 20 nm.
Doo Hyung Kang, Mincheol Shin
doaj   +1 more source

Voltage-circuit analysis in spin-torque ferromagnetic resonance [PDF]

open access: yesAPL Materials
Spin–orbit torque (SOT) enables efficient control of magnetization via spin–orbit coupling effects, so that accurate quantification of its efficiency is crucial for the development of spin–orbit devices.
Ki Hyuk Han   +9 more
doaj   +1 more source

Beyond STT-MRAM, Spin Orbit Torque RAM SOT-MRAM for High Speed and High Reliability Applications [PDF]

open access: yes, 2015
For 40 years, microelectronics has been following the Moore’s law, stating that the density and speed of integrated circuits would double every 18 months. However, this trend is presently getting out of breath, because of incoming insurmountable physical limits.
Prenat, Guillaume   +4 more
openaire   +3 more sources

Spin–orbit torque generated by spin–orbit precession effect in Py/Pt/Co tri-layer structure

open access: yesAPL Materials, 2020
In this report, current-induced spin–orbit torques (SOTs) in a permalloy (Py)/Pt/Co tri-layer system are investigated. In addition to the conventional SOTs generated from the spin Hall effect in the Pt layer, we observed a distinct existence of ...
Y. Hibino   +3 more
doaj   +1 more source

Theoretical Study of Field-Free Switching in PMA-MTJ Using Combined Injection of STT and SOT Currents

open access: yesMicromachines, 2021
Field-free switching in perpendicular magnetic tunnel junctions (P-MTJs) can be achieved by combined injection of spin-transfer torque (STT) and spin-orbit torque (SOT) currents. In this paper, we derived the relationship between the STT and SOT critical
Shaik Wasef, Hossein Fariborzi
doaj   +1 more source

Direct and inverse spin-orbit torques [PDF]

open access: yes, 2015
In collinear magnets lacking inversion symmetry, application of electric currents induces torques on the magnetization and conversely magnetization dynamics induces electric currents.
Blügel, Stefan   +2 more
core   +2 more sources

Enhanced spin-orbit torque (SOT) and spin accumulation quantification in perpendicularly magnetised systems [PDF]

open access: yes, 2020
The ever increasing demand for high-speed data transfer and data processing have pushed the field of electronics toward spintronics, making the utilisation of electron spin in devices a reality. Spin-orbit torque (SOT) is a current-induced phenomenon which manipulates magnetisation via momentum transfer from accumulated spins at the heavy metal (HM ...
openaire   +2 more sources

Validity of DFT-based spin-orbit torque calculation for perpendicular magnetic anisotropy in iron thin films

open access: yesAIP Advances, 2023
In this study, the validity of our DFT-based self-developed JunPy+SOT calculation method has been rigorously confirmed by the perpendicular magnetic anisotropy (PMA) induced effective magnetic anisotropy field of 5.6 kOe in a 1.5 nm-thick iron thin film.
Bao-Huei Huang, Yi-Feng Lai, Yu-Hui Tang
doaj   +1 more source

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