Results 21 to 30 of about 3,266 (171)
Hybrid Non-Volatile Flip-Flops Using Spin-Orbit-Torque (SOT) Magnetic Tunnel Junction Devices for High Integration and Low Energy Power-Gating Applications [PDF]
Electronics, 2020 This paper presents two novel hybrid non-volatile flip-flops (NVFFs) comprised of the conventional CMOS flip-flop for static storage in normal operations and Spin-Orbit-Torque Magnetic Tunnel Junction (SOT-MTJ) devices for temporary storage during power gating.
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Multilevel states driven by spin-orbit torque in a P-composition graded (Ga,Mn)(As,P) film
AIP Advances, 2023 We have studied spin-orbit torque (SOT) magnetization switching in a (Ga,Mn)(As,P) film with vertically-graded magnetic anisotropy. The magnetization switching chirality during current scans reveals that strain-induced Dresselhaus-type spin-orbit field ...
Kyung Jae Lee +5 more
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Spin-orbit torque (SOT) effective fields and SOT-induced switching in perpendicularly magnetized multilayers [PDF]
, 2020 Spin-orbit torque (SOT) is an electrical-driven phenomenon in which the magnetization of a ferromagnetic material can be switched by the momentum transfer of the diffused accumulated spins at the heavy metal (HM)/ferromagnet (FM) interface, when applying an electric current through the HM layer.
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, 2020 Symmetry breaking is a characteristic to determine which branch of a bifurcation system follows upon crossing a critical point. Specifically, in spin-orbit torque (SOT) devices, a fundamental question arises: how to break the symmetry of the ...
Carman, Gregory P. +13 more
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Electrical and Electronics Engineering: An International Journal, 2017 Magnetic Random Access Memory (MRAM) is a promising candidate to be the universal non-volatile (NV) storage device. The Magnetic Tunnel Junction (MTJ) is the cornerstone of the NV-MRAM technology. 2-terminal MTJ based on Spin Transfer Torque (STT) switching is considered as a hot topic for academic and industrial researchers.
Kotb, Jabeur +2 more
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Scientific Reports, 2022 We present a theoretical investigation of the magnetisation reversal process in CoFeB-based magnetic tunnel junctions (MTJs). We perform atomistic spin simulations of magnetisation dynamics induced by combination of spin orbit torque (SOT) and spin ...
Andrea Meo +3 more
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Spin–orbit torque switching in a T-type magnetic configuration with current orthogonal to easy axes
Nature Communications, 2019 Spin-orbit torque (SOT) induced magnetization switching facilitates all electric multi-state spin memories and spin logic devices. Here the authors show a new SOT field-free switching mode where the perpendicular layer with tilted easy axis is coupled to
W. J. Kong +9 more
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Materials Relevant to Realizing a Field-Effect Transistor Based on Spin–Orbit Torques
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019 Spin-orbit torque (SOT) is a promising mechanism for writing magnetic memories, while field-effect transistors (FETs) are the gold-standard device for logic operation.
Phillip Dang +8 more
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Challenges and opportunities for spintronics based on spin orbit torque
Fundamental Research, 2022 Spintronic devices based on spin orbit torque (SOT) have become the most promising pathway to the next-generation of ultralow-power nonvolatile logic and memory applications.
Shuai Ning +3 more
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Spin‐Orbit Torque in Van der Waals‐Layered Materials and Heterostructures
Advanced Science, 2021 Spin‐orbit torque (SOT) opens an efficient and versatile avenue for the electrical manipulation of magnetization in spintronic devices. The enhancement of SOT efficiency and reduction of power consumption are key points for the implementation of high ...
Wei Tang +4 more
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