Results 31 to 40 of about 3,266 (171)
This article explores an area saving scheme for spin–orbit torque (SOT) magnetic random access memory (MRAM) by sharing the SOT channel and write transistor among multiple magnetic tunnel junctions (MTJs).
Piyush Kumar, Azad Naeemi
doaj +1 more source
Spin-orbit torques in L1$_0$-FePt/Pt thin films driven by electrical and thermal currents
Using the linear response formalism for the spin-orbit torque (SOT) we compute from first principles the SOT in a system of two layers of L1$_0$-FePt(001) deposited on an fcc Pt(001) substrate of varying thickness.
Blügel, Stefan +3 more
core +1 more source
Intrinsic spin orbit torque in a single domain nanomagnet
We present theoretical studies of the intrinsic spin orbit torque (SOT) in a single domain ferromagnetic layer with Rashba spin-orbit coupling (SOC) using the non-equilibrium Green's function formalism for a model Hamiltonian.
Chshiev, M. +4 more
core +3 more sources
Magnonic Charge Pumping via Spin-Orbit Coupling [PDF]
The interplay between spin, charge, and orbital degrees of freedom has led to the development of spintronic devices like spin-torque oscillators, spin-logic devices, and spin-transfer torque magnetic random-access memories.
Brataas, Arne +7 more
core +1 more source
Electric-field control of spin-orbit torque in a magnetically doped topological insulator
Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in various magnetic
Akyol, Mustafa +18 more
core +1 more source
Role of dimensional crossover on spin-orbit torque efficiency in magnetic insulator thin films
The spin-orbit torque (SOT) induced magnetic switching makes metal/magnetic insulators bilayers preferred in the energy efficient spintronic applications. Here the authors show SOT switching in W/TmIG bilayers and reveal the dimension crossover of SOT as
Qiming Shao +21 more
doaj +1 more source
We present the observation of field-free spin-orbit-torque (SOT) switching of magnetization in a ferromagnetic semiconductor (Ga,Mn)As film with four-fold in-plane magnetic anisotropy.
Kyoul Han +5 more
doaj +1 more source
We investigate from first principles the field-like spin-orbit torques (SOTs) in a Ag$_{2}$Bi-terminated Ag(111) film grown on ferromagnetic Fe(110).
Blügel, Stefan +6 more
core +1 more source
Spin-orbit torques and spin accumulation in FePt/Pt and Co/Cu thin films from first principles: the role of impurities [PDF]
Using the Boltzmann formalism based on the first principles electronic structure and scattering rates, we investigate the current-induced spin accumulation and spin-orbit torques in FePt/Pt and Co/Cu bilayers in the presence of substitutional impurities.
Blügel, Stefan +6 more
core +2 more sources
Reducing power consumption in spintronic memory remains a major challenge due to the need for high current densities. A bilayer of gadolinium and holmium iron garnets enables purely temperature‐induced, nonvolatile magnetic switching with bistable states within a ±25 K range. This approach achieves up to 66‐fold lower energy use than current spin–orbit
Junseok Kim +3 more
wiley +1 more source

