Results 41 to 50 of about 3,266 (171)

Thickness Dependence of Spin-Orbit Torques in Ferrimagnetic GdFeCo Alloys

open access: yes, 2017
So far, studies of spin-orbit torques (SOT) in ferromagnets with perpendicular magnetic anisotropy (PMA) have been restricted to ultra thin samples, while a systematic study of its thickness dependence is still lacking in literature.
Lambert, Charles-Henri   +2 more
core   +1 more source

2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics

open access: yesAdvanced Functional Materials, EarlyView.
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit   +5 more
wiley   +1 more source

Enhanced spin–orbit torque efficiency in Pt/Co/Ho heterostructures via inserting Ho layer

open access: yesAPL Materials, 2020
Spin–orbit torque (SOT) is a promising approach to manipulate the magnetization for high-performance spintronic applications. In conventional SOT heterostructures with heavy metal (HM)/ferromagnet layers, the SOT efficiency is determined by the charge-to-
Tianli Jin   +8 more
doaj   +1 more source

SOT-MRAM 300mm integration for low power and ultrafast embedded memories

open access: yes, 2018
We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectures.
Baumgartner, M.   +18 more
core   +2 more sources

Functional Metal Complexes for Solar–Light‐Driven Energy Conversion

open access: yesAdvanced Materials, EarlyView.
This review provides an exhaustive summary of the recent advancements of functional metal complexes in solar‐to‐electrical, ‐chemical, and ‐thermal energy conversion, comprising material categories, design strategies, underlying principles of operation, and identified improvement of performances.
Yanyan Qin   +3 more
wiley   +1 more source

Experimental observation of the optical spin-orbit torque

open access: yes, 2012
Spin polarized carriers electrically injected into a magnet from an external polarizer can exert a spin transfer torque (STT) on the magnetization. The phe- nomenon belongs to the area of spintronics research focusing on manipulating magnetic moments by ...
A Brataas   +49 more
core   +1 more source

Spin Hall Nano‐Antenna

open access: yesAdvanced Science, EarlyView.
ABSTRACT The spin Hall effect is a well‐known phenomenon in spintronics that has found numerous applications in digital electronics (memory and logic), but relatively few in analog electronics. Practically the only analog application in widespread use is the spin Hall nano‐oscillator (SHNO) that delivers a high frequency alternating current or voltage ...
Raisa Fabiha   +6 more
wiley   +1 more source

Noncollinear spin texture-driven torque in deterministic spin–orbit torque-induced magnetization switching

open access: yesnpj Spintronics
To reveal the role of chirality on field-free spin–orbit torque (SOT) induced magnetization switching, we propose an existence of z-torque through the formation of noncollinear spin texture during SOT-induced magnetization switching in a laterally two ...
Suhyeok An   +7 more
doaj   +1 more source

A Comprehensive Study of Temperature and Its Effects in SOT-MRAM Devices

open access: yesMicromachines, 2023
We employ a fully three-dimensional model coupling magnetization, charge, spin, and temperature dynamics to study temperature effects in spin-orbit torque (SOT) magnetoresistive random access memory (MRAM).
Tomáš Hadámek   +5 more
doaj   +1 more source

Determination of spin Hall effect and spin diffusion length of Pt from self-consistent fitting of damping enhancement and inverse spin-orbit torque measurements

open access: yes, 2018
Understanding the evolution of spin-orbit torque (SOT) with increasing heavy-metal thickness in ferromagnet/normal metal (FM/NM) bilayers is critical for the development of magnetic memory based on SOT.
Berger, Andrew J.   +5 more
core   +1 more source

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