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IEEE Design & Test of Computers, 2007
As FPGAs have grown larger and more complex, the value of the IP implemented in them has grown commensurately. Since SRAM FPGAs reload their programming data every time they are powered up, an adversary can potentially copy the program as it is being loaded.
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As FPGAs have grown larger and more complex, the value of the IP implemented in them has grown commensurately. Since SRAM FPGAs reload their programming data every time they are powered up, an adversary can potentially copy the program as it is being loaded.
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2012
The trend of Static Random Access Memory (SRAM) along with CMOS technology scaling in different processors and system-on-chip (SoC) products has fuelled the need of innovation in the area of SRAM design. SRAM bitcells are made of minimum geometry devices for high density and to keep the pace with CMOS technology scaling, as a result, they are the first
Jawar Singh +2 more
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The trend of Static Random Access Memory (SRAM) along with CMOS technology scaling in different processors and system-on-chip (SoC) products has fuelled the need of innovation in the area of SRAM design. SRAM bitcells are made of minimum geometry devices for high density and to keep the pace with CMOS technology scaling, as a result, they are the first
Jawar Singh +2 more
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Debiasing of SRAM PUFs: Selection and Balancing
2019 IEEE International Workshop on Information Forensics and Security (WIFS), 2019Fuzzy commitment is used to bind a secret key to an SRAM-PUF observation vector. The fuzzy commitment scheme is secure as long as the observation vector has full entropy. Here, we assume that the observation vectors are biased, and explore two elementary schemes for debiasing: Selection and balancing.
Kusters, Lieneke, Willems, Frans M.J.
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IEEE Spectrum, 2010
A new type of lithography that uses an electron beam to spark a chemical reaction could provide a way to build incredibly tiny transistors, which the chipmaking industry will require in a few years. Researchers from Taiwan and the University of California, Berkeley, say they've made static RAM that anticipates 16-nanometer chip features using a new ...
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A new type of lithography that uses an electron beam to spark a chemical reaction could provide a way to build incredibly tiny transistors, which the chipmaking industry will require in a few years. Researchers from Taiwan and the University of California, Berkeley, say they've made static RAM that anticipates 16-nanometer chip features using a new ...
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2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 2007
Kevin Zhang 0001, Hiroyuki Yamauchi
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Kevin Zhang 0001, Hiroyuki Yamauchi
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Design of high stability, low power and high speed 12 T SRAM cell in 32-nm CNTFET technology
AEU - International Journal of Electronics and Communications, 2022Elangovan Mani +2 more
exaly
The Complementary FET (CFET) 6T-SRAM
IEEE Transactions on Electron Devices, 2021Doyoung Jang +2 more
exaly
A survey of SRAM-based in-memory computing techniques and applications
Journal of Systems Architecture, 2021Gaurav Verma +2 more
exaly
2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, 2008
Hiroyuki Yamauchi, Peter Rickert
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Hiroyuki Yamauchi, Peter Rickert
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