Results 181 to 190 of about 55,876 (211)
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IEEE Spectrum, 2010
A new type of lithography that uses an electron beam to spark a chemical reaction could provide a way to build incredibly tiny transistors, which the chipmaking industry will require in a few years. Researchers from Taiwan and the University of California, Berkeley, say they've made static RAM that anticipates 16-nanometer chip features using a new ...
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A new type of lithography that uses an electron beam to spark a chemical reaction could provide a way to build incredibly tiny transistors, which the chipmaking industry will require in a few years. Researchers from Taiwan and the University of California, Berkeley, say they've made static RAM that anticipates 16-nanometer chip features using a new ...
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Enhancing Retention Voltage for SRAM
2017In modern integrated chips, most of the power consumption comes from the memory blocks. These memory blocks require high rail voltages due to limited noise margins. Hence, the aim of this work is to design an assist circuitry which allows reduction in the retention voltage and consequently reduces the power consumption of memory.
Ankit Rehani +2 more
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2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 2007
Kevin Zhang 0001, Hiroyuki Yamauchi
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Kevin Zhang 0001, Hiroyuki Yamauchi
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2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, 2008
Hiroyuki Yamauchi, Peter Rickert
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Hiroyuki Yamauchi, Peter Rickert
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Performance Analysis of Conventional SRAM with Higher Order SRAM Topologies
2018The growth in digital consumer electronics has evoked a tremendous rise in performance of portable devices. To meet these demands, there is a need of primary memory and thus Static Random Access Memory (SRAM) serves this purpose. Technical innovations have provided the improved memory density and speed. Innovations in memory technology are reflected in
Ravneet Kaur +3 more
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Design of high stability, low power and high speed 12 T SRAM cell in 32-nm CNTFET technology
AEU - International Journal of Electronics and Communications, 2022M Elangovan +2 more
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The Complementary FET (CFET) 6T-SRAM
IEEE Transactions on Electron Devices, 2021Mohit Gupta +2 more
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A Comprehensive Study of Nanosheet and Forksheet SRAM for Beyond N5 Node
IEEE Transactions on Electron Devices, 2021Mohit Gupta +2 more
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