Results 31 to 40 of about 55,126 (212)
HALLS: An Energy-Efficient Highly Adaptable Last Level STT-RAM Cache for Multicore Systems [PDF]
, 1968 Spin-Transfer Torque RAM (STT-RAM) is widely considered a promising alternative to SRAM in the memory hierarchy due to STT-RAM's non-volatility, low leakage power, high density, and fast read speed.
Adegbija, Tosiron, Kuan, Kyle
core +4 more sources
Command vector memory systems: high performance at low cost [PDF]
, 1998 The focus of this paper is on designing both a low cost and high performance, high bandwidth vector memory system that takes advantage of modern commodity SDRAM memory chips.
Corbal San Adrián, Jesús +2 more
core +1 more source
Design of half-select free 12T SRAM cell with high performance for health care applications
e-Prime: Advances in Electrical Engineering, Electronics and EnergyStatic Random Access Memory (SRAM) plays a crucial role in applications related to health like Body Area Networks (BANs) which require increased battery lives for the sensor nodes in BANs.
Manoj Kumar R․ +1 more
doaj +1 more source
Design of Static Random-Access Memory Cell for Fault Tolerant Digital System
Applied Sciences, 2022 This paper comparatively analyzes the static random-access memory (SRAM) cell designs for fault tolerance. Since SRAM cells are sensitive to radiation-induced single event upsets, various circuit-level approaches have been applied.
Taehwan Yoon, Jihwan Park, Hanwool Jeong
doaj +1 more source
An FPGA-based infant monitoring system [PDF]
, 2005 We have designed an automated visual surveillance system for monitoring sleeping infants. The low-level image processing is implemented on an embedded Xilinx’s Virtex II XC2v6000 FPGA and quantifies the level of scene activity using a specially ...
Appiah, Kofi +3 more
core +1 more source
Radiation hardened 12T SRAM cell with improved writing capability for space applications
Memories - Materials, Devices, Circuits and Systems, 2023 This paper presents an inventive and extremely dependable radiation-hardened by-design (RHBD) 12T SRAM Cell with enhanced writing capability (RHWC-12T) for a space radiation environment.
Rishabh Sharma +2 more
doaj +1 more source
Advanced Electronic Materials, EarlyView.A physics‐based compact model for Conductive‐Metal‐Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non‐volatile conductance modulation and memory state stabilization enable reliable circuit‐level studies, advancing the optimization of neuromorphic and ...
Matteo Galetta +9 more
wiley +1 more source
Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design
Journal of Nanotechnology, 2020 The development of the nanoelectronics semiconductor devices leads to the shrinking of transistors channel into nanometer dimension. However, there are obstacles that appear with downscaling of the transistors primarily various short-channel effects ...
Mathan Natarajamoorthy +3 more
doaj +1 more source
Advanced Electronic Materials, EarlyView.In this study, we demonstrated that four distinct combinational logic operations can be reconfigured and executed within a single circuit structure, where each reconfigurable logic‐in‐memory cell dynamically adapts its function. The reconfigurable logic‐in‐memory cell, composed of triple‐gated feedback field‐effect transistors, performs NOT, AND, OR ...
Dongki Kim +4 more
wiley +1 more source
High-Performance low-vcc in-order core [PDF]
, 2010 Power density grows in new technology nodes, thus requiring Vcc to scale especially in mobile platforms where energy is critical. This paper presents a novel approach to decrease Vcc while keeping operating frequency high. Our mechanism is referred to as
Abella Ferrer, Jaume +4 more
core +1 more source