Results 31 to 40 of about 2,552 (174)

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Suočavanje s krivnjom i sramom

Diacovensia, 2017
Prepoznavati osjećaje koji otežavaju uspostavljanje odnosa s drugima važno je za psihičko i duhovno blagostanje osobe jer kada se upoznamo s njima i postajemo svjesni kako utječu na život, moguće ih je mijenjati radi punijega odnosa s drugima.
Josip Bošnjaković
doaj   +1 more source

A Monolithic 3-Dimensional Static Random Access Memory Containing a Feedback Field Effect Transistor

Micromachines, 2022
A monolithic three-dimensional integrated static random access memory containing a feedback field effect transistor (M3D-FBFET-SRAM) was proposed. The M3D-FBFET-SRAM cell consists of one metal oxide semiconductor field effect transistor (MOSFET) and one ...
Jong Hyeok Oh, Yun Seop Yu
doaj   +1 more source

Flexible Memory: Progress, Challenges, and Opportunities

Advanced Intelligent Discovery, EarlyView.
Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan, Sen Chen, Minghui Guo, Ziliang Cui, Yujie Du, Jing Liu   +5 more
wiley   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Design and Test of Principle Prototype of Space Single Event Upset Discriminating and Positioning System

Yuanzineng kexue jishu, 2022
Single event upset (SEU) has always been an important factor affecting the reliability of spacecraft electronic equipment, which can cause anomalies in electronic equipment in orbit, and can result in serious spacecraft failure. In order to master signal
ZHAO Zhendong;TAO Wenze;LI Yancun;CHENG Yi;ZHANG Qingxiang;AN Heng;QUAN Xiaoping;ZHANG Chenguang
doaj  

Large‐Scale and Highly Reliable Hopfield Neural Networks Using Vertical NAND Flash Memory for the In‐Memory Associative Computing

Advanced Intelligent Systems, EarlyView.
Large‐scale Hopfield neural networks (HNNs) for associative computing are implemented using vertical NAND (VNAND) flash memory. The proposed VNAND HNN with the asynchronous update scenario achieve robust image restoration performance despite fabrication variations, while significantly reducing chip area (≈117× smaller than resistive random‐access ...
Jin Ho Chang, Jae Seung Woo, Suk‐Kang Sung, Ki‐Whan Song, Woo Young Choi   +4 more
wiley   +1 more source

Design of low power SRAM cells with increased read and write performance using Read - Write assist technique

e-Prime: Advances in Electrical Engineering, Electronics and Energy
The demand for enhancing the performance of reliable processors necessitates using dependable, energy-efficient, and high-speed memory. Multiple obstacles arise as a consequence of this enhancement at lower technological nodes.
M. Srinu, E. Sreenivasa Rao, P. Chandra Sekhar   +2 more
doaj   +1 more source

Sensitive Volume Modeling in Calculation of Space Radiation-Induced SEU Cross Section [PDF]

فصلنامه علوم و فناوری فضایی, 2014
Shape and size of sensitive volume are the most important parameters to model electronic devices for calculation of the SEU rate from space radiations. So far different models have been proposed for estimation of the sensitive volume.
S. Boorboor, S. A. H. Feghhi, H. Jafari
doaj  

Design and Development of Efficient SRAM Cell Based on FinFET for Low Power Memory Applications

Journal of Electrical and Computer Engineering, 2023
Stationary random-access memory (SRAM) undergoes an expansion stage, to repel advanced process variation and support ultra-low power operation. Memories occupy more than 80% of the surface in today’s microdevices, and this trend is expected to continue ...
M. V. Nageswara Rao, Mamidipaka Hema, Ramakrishna Raghutu, Ramakrishna S. S. Nuvvula, Polamarasetty P. Kumar, Ilhami Colak, Baseem Khan   +6 more
doaj   +1 more source