Results 41 to 50 of about 2,552 (174)
A Flexible and Energy‐Efficient Compute‐in‐Memory Accelerator for Kolmogorov–Arnold Networks
Advanced Intelligent Systems, EarlyView.This article presents KA‐CIM, a compute‐in‐memory accelerator for Kolmogorov–Arnold Networks (KANs). It enables flexible and efficient computation of arbitrary nonlinear functions through cross‐layer co‐optimization from algorithm to device. KA‐CIM surpasses CPU, ASIC, VMM‐CIM, and prior KAN accelerators by 1–3 orders of magnitude in energy‐delay ...
Chirag Sudarshan +6 more
wiley +1 more source
Design of the two-tier MUX in 65 nm SRAM(65 nm SRAM两级多路选择器的设计)
Zhejiang Daxue xuebao. Lixue ban, 2010 为提高SRAM的存取速度,节省芯片面积,抑制工艺波动的影响,在对SRAM多路选择架构研究基础上改进了一种应用于65 nm SRAM的多路选择架构,建立了此多路选择架构的小信号模型.采用蒙特卡罗仿真导出了位线传输管的最小尺寸限制.同时,提出一种简单的估算电路节点时间常数的方法,用于从理论上分析改进的两级架构相对于传统的一级架构的优势,即当两级架构的两级译码的特征数字相近时可取得最佳性能,且灵敏放大器的特征数字越大时两级架构的优势越明显.仿真验证的结果显示,在面积几乎不变、控制复杂性几乎不增加前提下 ...
ZHANGQiang(张强), WUXiao-bo(吴晓波)
doaj +1 more source
Differential Read/Write 7T SRAM With Bit-Interleaved Structure for Near-Threshold Operation
IEEE Access, 2021 Near-threshold voltage ( $V_{th}$ ) operation is an effective method for lowering energy consumption. However, it increases the impact of $V_{th}$ variation significantly, which makes it difficult for previously proposed static random access memory ...
Ji Sang Oh +4 more
doaj +1 more source
Embedded intelligent SRAM [PDF]
Proceedings of the 40th conference on Design automation - DAC '03, 2003 Many embedded systems use a simple pipelined RISC processor for computation and an on-chip SRAM for data storage. We present an enhancement called Intelligent SRAM (ISRAM) that consists of a small computation unit with an accumulator that is placed near the on-chip SRAM. The computation unit can perform operations on two words from the same SRAM row or
Prabhat Jain +2 more
openaire +1 more source
Two‐Dimensional Piezoelectric Nanomaterials for Nanoelectronics and Energy Harvesting
ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.Two‐Dimensional Piezoelectric Nanomaterials from properties to applications. Smart materials, especially piezoelectric materials, have gained popularity over the last two decades. Two‐dimensional (2D) piezoelectric materials exhibit attributes including great flexibility, ease of workability, extensive surface area, and many active sites, indicating ...
Yujun Cao +12 more
wiley +1 more source
Monolayer Transistor SRAMs [PDF]
ACM Journal on Emerging Technologies in Computing Systems, 2017 Monolayer heterojunction FETs based on vertical heterogeneous transition metal dichalcogenides (TMDCFETs) and planar black phosphorus FETs (BPFETs) have demonstrated excellent subthreshold swing, high I ON I OFF , and high ...
Joydeep Rakshit +4 more
openaire +1 more source
Ultrathin Hafnium‐Based Ferroelectric Devices for In‐Memory Computing Applications
Information &Functional Materials, EarlyView.Hafnium‐based ferroelectric devices exhibit advantages in nonvolatile storage, low power consumption, and ultrahigh operation speed, positioning them as strong candidates for constructing hardware neural networks. ABSTRACT The discovery of ferroelectricity in HfO2‐based ferroelectrics at the ultrathin scale has reignited enthusiasm for ferroelectric ...
Chenghong Mo +3 more
wiley +1 more source
Field‐free programmable bipolar magnetic heterostructures for neuromorphic computing
InfoMat, EarlyView.Neuromorphic computing mimics the brain's efficiency, yet typical memristors lack biological synapses' dual signal control. We introduce a magnetic memristor enabling bidirectional, multi‐state modulation without external fields, validated in image feature extraction and neural clustering.
Yaping He +9 more
wiley +1 more source
M3D-MDA: New scratchpad memory for enhancing GPU performance and energy efficiency
ETRI JournalApplications in various fields, such as deep learning and scientific computing, naturally exhibit data access patterns along both the row and column dimensions of static random access memory (SRAM).
Cong Thuan Do
doaj +1 more source
An Embedded Level-Shifting Dual-Rail SRAM for High-Speed and Low-Power Cache
IEEE Access, 2020 An embedded level-shifting (ELS) dual-rail SRAM is proposed to enhance the availability of dual-rail SRAMs. Although dual-rail SRAM is a powerful solution for satisfying the increasing demand for low-power applications, the enormous performance ...
Tae Hyun Kim +5 more
doaj +1 more source