Results 41 to 50 of about 55,126 (212)
Advanced Electronic Materials, EarlyView.A magnetic tunnel junction (MTJ) with two free layers shows four magnetization reversal phases governed by interlayer magnetic coupling (Jcpl). Phase 2 (sequential reversal) reduces write current (Iw) by 50% for 30‐nm‐diameter MTJs compared to Phase 4 (coherent reversal), while Jcpl also boosts thermal stability.
Shujun Ye, Koichi Nishioka
wiley +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
Advanced Electronic Materials, EarlyView.This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
Suočavanje s krivnjom i sramom
Diacovensia, 2017 Prepoznavati osjećaje koji otežavaju uspostavljanje odnosa s drugima važno je za psihičko i duhovno blagostanje osobe jer kada se upoznamo s njima i postajemo svjesni kako utječu na život, moguće ih je mijenjati radi punijega odnosa s drugima.
Josip Bošnjaković
doaj +1 more source
A Monolithic 3-Dimensional Static Random Access Memory Containing a Feedback Field Effect Transistor
Micromachines, 2022 A monolithic three-dimensional integrated static random access memory containing a feedback field effect transistor (M3D-FBFET-SRAM) was proposed. The M3D-FBFET-SRAM cell consists of one metal oxide semiconductor field effect transistor (MOSFET) and one ...
Jong Hyeok Oh, Yun Seop Yu
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Ultra-low power SRAM and SRAM based PUF design [PDF]
, 2020 With the recent development of portable devices and wearable technology, the requirements of long battery life-time, ultra-low power consumption and low cost in system-on-a-chip (SoC) are becoming increasingly significant. However, the aggressive CMOS technology which integrates with more devices and larger capacitor cache cause high power density. As
openaire +2 more sources
Thin Rechargeable Batteries for CMOS SRAM Memory Protection [PDF]
, 1993 New rechargeable battery technology is described and compared with classical primary battery back-up of SRAM PC cards. Thin solid polymer electrolyte cells with the thickness of TSOP memory components (1 mm nominal, 1.1 mm max) and capacities of 14 mAh ...
Crouse, Dennis N.
core +1 more source
Flexible Memory: Progress, Challenges, and Opportunities
Advanced Intelligent Discovery, EarlyView.Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan +5 more
wiley +1 more source
Advanced Intelligent Discovery, EarlyView.Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj +2 more
wiley +1 more source
Yuanzineng kexue jishu, 2022 Single event upset (SEU) has always been an important factor affecting the reliability of spacecraft electronic equipment, which can cause anomalies in electronic equipment in orbit, and can result in serious spacecraft failure. In order to master signal
ZHAO Zhendong;TAO Wenze;LI Yancun;CHENG Yi;ZHANG Qingxiang;AN Heng;QUAN Xiaoping;ZHANG Chenguang
doaj
, 2016 Multilayered artificial neural networks (ANN) have found widespread utility in classification and recognition applications. The scale and complexity of such networks together with the inadequacies of general purpose computing platforms have led to a ...
Jaiswal, Akhilesh +4 more
core +1 more source