Results 1 to 10 of about 295,838 (225)

Low-power adiabatic 9T static random access memory [PDF]

The Journal of Engineering, 2014
In this paper, the authors propose a novel static random access memory (SRAM) that employs the adiabatic logic principle. To reduce energy dissipation, the proposed adiabatic SRAM is driven by two trapezoidal-wave pulses.
Yasuhiro Takahashi, Nazrul Anuar Nayan, Toshikazu Sekine, Michio Yokoyama   +3 more
doaj   +3 more sources

Pitfall of the Strongest Cells in Static Random Access Memory Physical Unclonable Functions [PDF]

Sensors, 2018
Static Random Access Memory (SRAM) Physical Unclonable Functions (PUFs) are some of the most popular PUFs that provide a highly-secured solution for secret key storage.
Mingyang Gong, Hailong Liu, Run Min, Zhenglin Liu   +3 more
doaj   +4 more sources

One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors [PDF]

Scientific Reports, 2021
In this study, we fabricated a 2 × 2 one-transistor static random-access memory (1T-SRAM) cell array comprising single-gated feedback field-effect transistors and examined their operation and memory characteristics.
Sangik Choi, Jaemin Son, Kyoungah Cho, Sangsig Kim   +3 more
doaj   +4 more sources

Performance Degradation in Static Random Access Memory of 10 nm Node FinFET Owing to Displacement Defects [PDF]

Micromachines, 2023
We comprehensively investigate displacement-defect-induced current and static noise margin variations in six-transistor (6T) static random access memory (SRAM) based on a 10 nm node fin field-effect transistor (FinFET) using technology computer-aided ...
Minji Bang, Jonghyeon Ha, Gyeongyeop Lee, Minki Suh, Jungsik Kim   +4 more
doaj   +4 more sources

Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors [PDF]

Nature Communications
Static Random-Access Memory (SRAM) cells are fundamental in computer architecture, serving crucial roles in cache memory, buffers, and registers due to their high-speed performance and low power consumption.
Muhtasim Ul Karim Sadaf, Ziheng Chen, Shiva Subbulakshmi Radhakrishnan, Yongwen Sun, Lei Ding, Andrew R. Graves, Yang Yang, Joan M. Redwing, Saptarshi Das   +8 more
doaj   +4 more sources

A Monolithic 3-Dimensional Static Random Access Memory Containing a Feedback Field Effect Transistor [PDF]

Micromachines, 2022
A monolithic three-dimensional integrated static random access memory containing a feedback field effect transistor (M3D-FBFET-SRAM) was proposed. The M3D-FBFET-SRAM cell consists of one metal oxide semiconductor field effect transistor (MOSFET) and one ...
Jong Hyeok Oh, Yun Seop Yu
doaj   +2 more sources

Static random‐access memory with embedded arithmetic logic units for in‐memory computing and ternary content addressable memory operation [PDF]

Electronics Letters, 2022
In‐memory computing (IMC) is a novel computing architecture that presents considerable potential in solving the data transmission and energy consumption problems faced by the von Neumann architecture.
Zhiting Lin, Xing Fan, Shuiyue Yu, Chunyu Peng, Qiang Zhao, Xiulong Wu   +5 more
doaj   +2 more sources

Ultra-low leakage static random access memory design [PDF]

International Journal of Reconfigurable and Embedded Systems (IJRES), 2023
An ultra-low leakage static random-access memory (SRAM) cell structure with 8 transistors is proposed in this paper. Compared to the 6T SRAM and other existing 8T SRAM cells, leakage power of the proposed cell in hold mode reduced significantly. The stability parameters of the proposed cell are calculated using butterfly method and also N-curve method.
D. Anitha, Mohd. Masood Ahmad
openalex   +2 more sources

Soft-Error-Resilient Static Random Access Memory with Enhanced Write Ability for Radiation Environments [PDF]

Micromachines
As semiconductor technologies advance, SRAM cells deployed in space systems face heightened sensitivity to radiation-induced soft errors. In conventional 6T SRAM, when high-energy particles strike sensitive nodes, single-event upsets (SEUs) may occur ...
Se-Yeon Park, Eun Gyo Jeong, Sung-Hun Jo
doaj   +2 more sources

Electrical Coupling and Simulation of Monolithic 3D Logic Circuits and Static Random Access Memory [PDF]

Micromachines, 2019
In order to simulate a circuit by applying various logic circuits and full chip using the HSPICE model, which can consider electrical coupling proposed in the previous research, it is investigated whether additional electrical coupling other than ...
Tae Jun Ahn, Bum Ho Choi, Sung Kyu Lim, Yun Seop Yu   +3 more
doaj   +2 more sources