Results 141 to 150 of about 3,273 (179)

Probabilistically Programmed STT-MRAM

IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 2012
Novel memory programming methods and corresponding memory structures are presented in this paper. Unlike conventional memory programming, this programming technique does not require deterministic switching of memory elements. This technique explicitly exploits the probabilistic switching characteristics of memory elements such as spin-transfer torque ...
Wenqing Wu, Xiaochun Zhu, Seung Kang, Kendrick Yuen, Rob Gilmore   +4 more
openaire   +1 more source

STT-MRAM-Based Strong PUF Architecture

2015 IEEE Computer Society Annual Symposium on VLSI, 2015
Physically Unclonable Functions (PUFs) are emerging cryptographic primitives used to implement low-cost device authentication and secure secret key generation. Weak PUFs (i.e., devices able to generate a single signature or to deal with a limited number of challenges) and Strong PUFs (i.e., devices able to deal with multiple challenges) are widely ...
Vatajelu, Elena Ioana, Di Natale, Giorgio, Torres, Lionel, Prinetto, Paolo   +3 more
openaire   +1 more source

STT-MRAM for Embedded Memory Applications

2020 IEEE International Memory Workshop (IMW), 2020
With traditional embedded memories, such as eFlash and SRAM, facing major challenge of scaling beyond 28 nm, STT-MRAM stands out from competing emerging NVM technologies as the preferred technology for both embedded flash and SRAM replacements. Having high data retention, reflow compatibility and high endurance, MRAM is ready for production to replace ...
Zihui Wang, Xiaojie Hao, Pengfa Xu, Longqian Hu, Dongha Jung, Woojin Kim, Kimihiro Satoh, Bing Yen, Zhiqiang Wei, Lienchang Wang, Jing Zhang, Yiming Huai   +11 more
openaire   +1 more source

STT MRAM patterning challenges

SPIE Proceedings, 2013
In this paper we report on the patterning challenges for the integration of Spin-Transfer Torque Magneto-Resistive- Random-Access Memory (STT MRAM). An overview of the different patterning approaches that have been evaluated in the past decade is presented.
Werner Boullart, Dunja Radisic, Vasile Paraschiv, Sven Cornelissen, Mauricio Manfrini, Koichi Yatsuda, Eiichi Nishimura, Tetsuya Ohishi, Shigeru Tahara   +8 more
openaire   +1 more source

Mitigating Read Failures in STT-MRAM

2020 IEEE 38th VLSI Test Symposium (VTS), 2020
Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is an emerging non-volatile memory technology, as a leading candidate to replace conventional on-chip memories due to its various advantages such as high density, non-volatility, scalability, high endurance and CMOS compatibility.
Nair, S. M., Bishnoi, R., Tahoori, M. B.
openaire   +2 more sources

Electrical Modeling of STT-MRAM Defects

2018 IEEE International Test Conference (ITC), 2018
Spin-transfer-torque magnetic RAM (STT-MRAM) is one of the most promising emerging memory technologies. As various manufacturing vendors make significant efforts to push it to the market, appropriate STT-MRAM testing is of great importance. In this paper, we demonstrate that conventional STT-MRAM defect modeling, which is based on linear resistors, is ...
Wu, Lizhou, Taouil, Mottaqiallah, Rao, Siddharth, Marinissen, Erik Jan, Hamdioui, Said   +4 more
openaire   +1 more source

Accelerating STT-MRAM Ramp-up Characterization

2020 18th IEEE International New Circuits and Systems Conference (NEWCAS), 2020
Systematic characterization is crucial for magnetic tunnel junction from initial stack development to the final mass production. It has a direct impact on the wafer turn-around time and time to market. Under these circumstances, device characterization of the magnetic tunnel junction (MTJ) stack configuration is a critical step in the product ...
Govind Radhakrishnan, Youngki Yoon, Manoj Sachdev   +2 more
openaire   +1 more source

STT-MRAM-Based Reliable Weak PUF

IEEE Transactions on Computers, 2022
In recent years, micro-nano device characteristics like ferroelectrics and resistive switching are being used to build important security primitives such as Physical Unclonable Function (PUF). The micro-nano device-based hardware security primitives, although with higher security, energy efficiency, and integration density, suffer from serious ...
Yupeng Hu, Linjun Wu, Zhuojun Chen, Yun Huang, Xiaolin Xu, Keqin Li, Jiliang Zhang   +6 more
openaire   +1 more source

Single-Event Effects in STT MRAM

2021 IEEE 32nd Magnetic Recording Conference (TMRC), 2021
STT MRAM’s greater memory density and inherent radiation tolerance has made it an attractive non-volatile memory option for the space and radiation effects community. Two Single-Event Effects (SEE) in STT MRAM will be discussed, which are bit-flips due to magnetization reversal of the ferromagnetic layers [1] and a negative bit resistance shift caused ...
Douglas Martin, K. Deniz Bozdag, Mark Savage, John Steele   +3 more
openaire   +1 more source

Monitoring Aging Defects in STT-MRAMs

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2020
Identifying manufacturing defects in magnetic tunnel junction (MTJ) device is crucial for the yield and reliability of spin-torque-transfer (STT) magnetic random-access memory (MRAM) arrays. Several of the MTJ defects result inparametric deviations of the device that deteriorate over time.
Govind Radhakrishnan, Youngki Yoon, Manoj Sachdev   +2 more
openaire   +1 more source