Results 211 to 220 of about 12,657 (265)

Surface Photovoltage-Based Biosensor

2000
The surface photovoltage (SPV) technique was first applied to a chemical sensor by Hafeman et al. in 1988.1 We applied the technique to immunosensors in 19902 and also investigated possible applications to various kinds of chemical sensors, including ion sensors,3 gas sensors,4 biosensors,5 and image sensors.6 These studies demonstrated various ...
Yuji Murakami, Eiichi Tamiya, Hidekazu Uchida, Teruaki Katsube   +3 more
openaire   +1 more source

Surface photovoltage in a-Si:H

Journal of Non-Crystalline Solids, 1987
Abstract The surface photovoltage (SPV) was measured as a function of temperature and light intensity for 2.0 eV and 2.5 eV photons for clean, oxidized and ligth soaked a-Si:H films. The undoped samples were transferred by a vacuum lock from the plasma deposition system to the analysis chamber and investigated by the kelvin technique.
M. Foller, J. Herion, W. Beyer, H. Wagner   +3 more
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Surface photovoltage spectroscopy of Cd0.85Mn0.15Te

physica status solidi (a), 1986
Surface photovoltage spectroscopy measurements are performed for Cd0.85.Mn0.15. Te single crystals with surface orientation (110) in the temperature range between 85 and 300 K at a pressure of 10−5 Pa. The linear dependence on temperature of the energy gap and the energy of the levels connected with manganese are stated and the temperature coefficients
S. Kuźmiński, A. T. Szaynok
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Determination of surface state parameters from surface photovoltage transients: CdS

Surface Science, 1972
Abstract A method was developed for determining surface state parameters such as density, fractional occupancy and capture cross section for electrons and for photons from surface photovoltage transients. These transients were found to be associated with the photostimulated transition of electrons from surface states to the conduction band.
C.L Balestra, J Łagowski, H.C Gatos
openaire   +1 more source

Surface Photovoltage Effects in Photoemission from Diamond Surfaces

MRS Proceedings, 1996
AbstractPhotovoltaic effects in ultraviolet photoemission spectroscopy of the in-situ “rehydrogenated”, and reconstructed (111) diamond surfaces are evaluated. We show that photovoltaic charging effects during photoemission studies of the in-situ “re-hydrogenated” (111)-(l×l):H diamond surface are significant at temperatures as high as room temperature.
C. Bandis, B. B. Pate
openaire   +1 more source

Surface Photovoltage Measurement of Hydrogen‐Treated Si Surfaces

Journal of The Electrochemical Society, 1999
A contactless surface photovoltage technique was used to measure surface-potential barriers resulting from hydrogen termination of silicon surfaces and their evolution as the surfaces gradually oxidized in air at room temperature. Hydrogen termination formed by annealing in a hydrogen ambient was more complete than passivation formed by aqueous HF ...
K. Nauka, T. I. Kamins
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Surface photovoltage spectroscopy analyses of Cd1−xZnxTe

Journal of Applied Physics, 2008
Cd 1 − x Zn x Te alloys have been studied by surface photovoltage spectroscopy (SPS) and energy dispersive spectroscopy (EDS). The analyses of surface photovoltage spectra have been perfomed at near and above band gap energies. Surface recombination effects on the surface photovoltage have been investigated.
CAVALCOLI, DANIELA, FRABONI, BEATRICE, CAVALLINI, ANNA   +2 more
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Surface photovoltage spectroscopy of real 〈111〉 GaP surfaces

Physica Status Solidi (a), 1987
Surface photovoltage spectroscopy measurements are reported for real np, n, and p-type GaP surfaces. Surface energy states are detected within and greater than the energy gap. Changing the surface condition by etching produces changes in the distributions of the surface states prior to etching, this is attributed to the effect of the adsorbed oxygen at
M. S. El-Dessouki, V. A. Attia, M. M. Saad El-Deen, F. Z. Gobrial   +3 more
openaire   +1 more source

Surface Photovoltage Spectroscopy

1978
Surface photovoltage (SPV) spectroscopy is discussed with respect to its application for the investigation of semiconductor surfaces. Principles of the method and experimental techniques are presented. As examples, recent experimental results on the electronic structure of ultrahigh vacuum (UHV) cleaved surfaces of Ge, Si and GaAs are briefly reviewed.
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Surface photovoltage in hydrogenated amorphous silicon

Applied Physics Letters, 1984
By solving Poisson’s equation in dark and light, it is concluded that the observed surface photovoltage in hydrogenated amorphous silicon necessarily involves a transfer of charge between the surface states and the space-charge region, and does not directly give the band bending. Experimental evidence which supports this conclusion is presented.
Shailendra Kumar, S. C. Agarwal
openaire   +1 more source