Results 161 to 170 of about 24,214 (199)
, 2019 Some of the next articles are maybe not open access.
Related searches:
Related searches:
Microelectronics Reliability, 2012
Using TCAD tools, many reliability issues can be studied quantitatively. Examples are hot carrier degradation of interfaces, threshold voltage shifts during NBTI stress, radiation effects and soft errors, ESD and latch-up, thermo-mechanical issues, electro-migration and stress-voiding.
P. Pfäffli +7 more
openaire +1 more source
Using TCAD tools, many reliability issues can be studied quantitatively. Examples are hot carrier degradation of interfaces, threshold voltage shifts during NBTI stress, radiation effects and soft errors, ESD and latch-up, thermo-mechanical issues, electro-migration and stress-voiding.
P. Pfäffli +7 more
openaire +1 more source
Microelectronics Reliability, 2018
Abstract Technology Computer Aided Design (TCAD) tools can be used to effectively study and analyze a multitude of reliability issues in semiconductor devices. In the following article, we first describe Negative-Bias Temperature Instability (NBTI), which is one of the most severe reliability issues.
P. Pfäffli +10 more
openaire +1 more source
Abstract Technology Computer Aided Design (TCAD) tools can be used to effectively study and analyze a multitude of reliability issues in semiconductor devices. In the following article, we first describe Negative-Bias Temperature Instability (NBTI), which is one of the most severe reliability issues.
P. Pfäffli +10 more
openaire +1 more source
Real-Time TCAD: a new paradigm for TCAD in the artificial intelligence era
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2020This paper presents a novel approach to enable real-time device simulation and optimization. State-of-the-art algorithms which can describe semiconductor domain are adopted to train deep learning models whose input and output are process condition and doping profile / electrical characteristic, respectively.
Sanghoon Myung +13 more
openaire +1 more source
A TCAD calibration methodology
Proceedings IEEE/WIC International Conference on Web Intelligence (WI 2003), 2004A systematic methodology for the calibration of laser simulation environment is presented. This allows device designers to obtain good agreement between measurements and simulations in short time. The procedure is based on the laser simulator DESSIS-Laser and the TCAD environment GENESISe, which provides pre-processing, post-processing and numerical ...
V. Laino +3 more
openaire +1 more source
Semiconductor wafer representation for TCAD
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1994This work describes the Semiconductor Wafer Representation (SWR) for representing and manipulating wafer state during process and device simulation. The goal of the SWR is to provide an object-oriented interface to a collection of functions designed for developing and integrating Technology CAD (TCAD) applications.
M.D. Giles +11 more
openaire +1 more source
Semiconductor Industry and TCAD
2011Technological advances in the past few decades have taken place at a breakneck pace. From the now-ubiquituous smartphone to new technologies like the Apple iPad™ and 3D TV, new ideas continue to change our daily lives and innovation shows no signs of slowing down.
Simon Li, Yue Fu
openaire +1 more source