Results 11 to 20 of about 5,839,066 (223)

Design and TCAD Simulation of p+–n+ InAs‐Based TFET

Nano Select
Tunnel field‐effect transistors (TFETs) are promising for ultra‐low‐power electronics, yet their practical adoption is hindered by limited ON‐current and strong sensitivity of band‐to‐band tunneling (BTBT) to geometry, doping, and quantum confinement ...
Muhammad Elgamal, Mona El Sabbagh, Fatma Shokry, Ahmed Shaker, Mohammed El‐Banna, Mohamed Abouelatta   +5 more
doaj   +2 more sources

ESD Design Verification Aided by Mixed-Mode Multiple-Stimuli ESD Simulation

IEEE Journal of the Electron Devices Society, 2021
Electrostatic discharge (ESD) protection is a grand design challenge for complex ICs in advanced technologies. ESD simulation is indispensable to guide ESD protection designs.
Mengfu Di, Zijin Pan, Cheng Li, Albert Wang   +3 more
doaj   +1 more source

TCAD Simulation Models, Parameters, and Methodologies for beta-Ga2O3 Power Devices

ECS Journal of Solid State Science and Technology, 2023
β-Ga2O3 is an emerging material and has the potential to revolutionize power electronics due to its ultra-wide-bandgap (UWBG) and lower native substrate cost compared to silicon carbide and gallium nitride. Since β-Ga2O3 technology is still not mature,
H. Wong
semanticscholar   +1 more source

Prediction of Device Characteristics of Feedback Field-Effect Transistors Using TCAD-Augmented Machine Learning

Micromachines, 2023
In this study, the device characteristics of silicon nanowire feedback field-effect transistors were predicted using technology computer-aided design (TCAD)-augmented machine learning (TCAD-ML).
Sola Woo, Juhee Jeon, Sangsig Kim
doaj   +1 more source

Effects of Different Factors on Single Event Effects Introduced by Heavy Ions in SiGe Heterojunction Bipolar Transistor: A TCAD Simulation

Electronics, 2023
In this paper, the effects of different factors, including the heavy ions striking location, incident angle, linear energy transfer (LET) value, projected range, ambient temperature and bias state, on the single event transient introduced by heavy ions ...
Zheng Zhang, G. Guo, Futang Li, Haohan Sun, Qiming Chen, Shuyong Zhao, Jiancheng Liu, X. Ouyang   +7 more
semanticscholar   +1 more source

Narrowband Near-Infrared Perovskite/Organic Photodetector: TCAD Numerical Simulation

Crystals, 2022
Narrowband photodetectors (PD) established in the near-infrared (NIR) wavelength range are highly required in a variety of applications including high-quality bioimaging.
Marwa S. Salem, Ahmed Shaker, Amal H. Al-Bagawia, Ghada Mohamed Aleid, Mohamed S. Othman, Mohammad T. Alshammari, Mostafa Fedawy   +6 more
doaj   +1 more source

Comprehensive Study and Optimization of Implementing p-NiO in β-Ga2O3 Based Diodes via TCAD Simulation

Crystals, 2021
In this paper, we carried out a comprehensive study and optimization of implementing p-NiO in the β-Ga2O3 based diodes, including Schottky barrier diode (SBD) with p-NiO guard ring (GR), p-NiO/β-Ga2O3 heterojunction (HJ) barrier Schottky (HJBS) diode ...
Hong Zhou, Zeng Shifan, Jincheng Zhang, Zhihong Liu, Q. Feng, Shengrui Xu, Jinfeng Zhang, Y. Hao   +7 more
semanticscholar   +1 more source

3D TCAD Analysis Enabling ESD Layout Design Optimization

IEEE Journal of the Electron Devices Society, 2020
On-chip electrostatic discharge (ESD) protection design for integrated circuits (ICs) is a challenging design-for-reliability problem. Since ESD events involve very high current transients in very short time period, current crowding is unavoidable, which
Zijin Pan, Cheng Li, Mengfu Di, Feilong Zhang, Albert Wang   +4 more
doaj   +1 more source

TCAD simulation of AC-LGADs

, 2023
Low Gain Avalanche Detectors (LGADs) are thin silicon detectors with moderate internal signal amplification and time resolution as good as 17 ps for minimum ionizing particles. However, the current major limiting factor in granularity is due to protection structures preventing breakdown caused by high electric fields at the edge of the segmented ...
Nizam, M., Shin, K. W., Mazza, S. M., Ott, J., Seiden, A., Schumm, B., Zhao, Y.   +6 more
openaire   +2 more sources

Analysis of Electrical Characteristics in 4H-SiC Trench-Gate MOSFETs with Grounded Bottom Protection p-Well Using Analytical Modeling

Applied Sciences, 2021
A new analytical model to analyze and optimize the electrical characteristics of 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors (TMOSFETs) with a grounded bottom protection p-well (BPW) was proposed.
Jee-Hun Jeong, Ogyun Seok, Ho-Jun Lee
doaj   +1 more source