Results 11 to 20 of about 11,389 (196)

Analysis of Electrical Characteristics in 4H-SiC Trench-Gate MOSFETs with Grounded Bottom Protection p-Well Using Analytical Modeling

Applied Sciences, 2021
A new analytical model to analyze and optimize the electrical characteristics of 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors (TMOSFETs) with a grounded bottom protection p-well (BPW) was proposed.
Jee-Hun Jeong, Ogyun Seok, Ho-Jun Lee
doaj   +1 more source

Comparative Characterization of NWFET and FinFET Transistor Structures Using TCAD Modeling

Micromachines, 2022
A complete comparison for 14 nm FinFET and NWFET with stacked nanowires was carried out. The electrical and thermal performances in two device structures were analyzed based on TCAD simulation results.
Konstantin O. Petrosyants, Denis S. Silkin, Dmitriy A. Popov   +2 more
doaj   +1 more source

Nano-Electronic Simulation Software (NESS): A Novel Open-Source TCAD Simulation Environment

Journal of Microelectronic Manufacturing, 2020
This paper presents the latest status of the open source advanced TCAD simulator called Nano-Electronic Simulation Software (NESS) which is currently under development at the Device Modeling Group of the University of Glasgow.
Cristina Medina-Bailon, Tapas Dutta, Fikru Adamu-Lema, Ali Rezaei, Daniel Nagy, Vihar P. Georgiev, Asen Asenov   +6 more
doaj   +1 more source

Device to Circuit Co-Design Utilizing High-Performance PEALD Indium-Gallium-Zinc Oxide Thin-Film Transistor Enabling Technology Node Scaling in Monolithic 3D Systems. [PDF]

Adv Sci (Weinh)
This article presents a holistic investigation of M3D‐compatible oxide semiconductor technology using PEALD‐fabricated IGZO TFTs, spanning device‐level characterization, TCAD Modeling, circuit design, and scaled‐node projections. It demonstrates high field‐effect mobility (up to 116.35 cm2 V−1·s−1), robust reliability (△VTH < 0.15 V), low variation ...
Wang W, Zhang T, Yuan Z, Peng H, Lan J, Li Z, Wu Y, Feng X, Lin L, Zhou F, Zhang P, Li Y.   +11 more
europepmc   +2 more sources

Powernet: SOI Lateral Power Device Breakdown Prediction With Deep Neural Networks

IEEE Access, 2020
The breakdown performance is a critical metric for power device design. This paper explores the feasibility of efficiently predicting the breakdown performance of silicon on insulator (SOI) lateral power device using multi-layer neural networks as an ...
Jing Chen, Mohamed Baker Alawieh, Yibo Lin, Maolin Zhang, Jun Zhang, Yufeng Guo, David Z. Pan   +6 more
doaj   +1 more source

A Two-Dimensional Computer-Aided Design Study of Unclamped Inductive Switching in an Improved 4H-SiC VDMOSFET

Micromachines, 2023
Due to its high thermal conductivity, high critical breakdown electric field, and high power, the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) has been generally used in industry.
Xinfeng Nie, Ying Wang, Chenghao Yu, Xinxing Fei, Jianqun Yang, Xingji Li   +5 more
doaj   +1 more source

Ferroelectric behavior and NCFETs - TCAD Simulation

Asian Journal of Electrical and Electronic Engineering, 2021
With the miniaturization of transistors, the current leakage also increases due to the increasing tunnelling effect. Plus, Boltzmann’s tyranny limits the subthreshold swing to be best and ideal at 60 mV/decade. Due to these, the power consumption in transistors keeps soaring up. Therefore, in this paper, the Negative Capacitance Effect Field Transistor
Naimah Darmis, AHM Zahirul Alam, Muhaimin Mohd Hashim   +2 more
openaire   +1 more source

Simulations of the breakdown characteristics of n-on-p backside-illumination Silicon Photomultipliers by TCAD

Results in Physics, 2018
This paper investigates, using Synopsys Sentaurus TCAD simulation, the dependence of the breakdown voltage of n-on-p backside-illumination Silicon Photomultipliers (BSI-SiPM) on the implantation dose, the implantation energy and the screening SiO2 ...
Ran He, Guangqing Yan, Jian Liu, Wenxuan Cheng, Rongdan Liu, Kun Liang, Ru Yang, Dejun Han   +7 more
doaj   +1 more source

TCAD-Machine Learning Framework for Device Variation and Operating Temperature Analysis With Experimental Demonstration

IEEE Journal of the Electron Devices Society, 2020
This work, for the first time, experimentally demonstrates a TCAD-Machine Learning (TCAD-ML) framework to assist the analysis of device-to-device variation and operating (ambient) temperature without the need of physical quantities extraction.
Hiu Yung Wong, Ming Xiao, Boyan Wang, Yan Ka Chiu, Xiaodong Yan, Jiahui Ma, Kohei Sasaki, Han Wang, Yuhao Zhang   +8 more
doaj   +1 more source

TCAD Simulation of Single Event Transient in Si Bulk MOSFET at Cryogenic Temperature

IEEE Access, 2022
In this paper, the functional relationship between temperature and single event transient currents caused by heavy-ion striking using TCAD simulation is investigated from 77K to 300 K on 65nm Si bulk n MOSFET. TCAD simulation shows that temperature has a
Tongshan Lu, Chenghua Wang
doaj   +1 more source