Results 71 to 80 of about 11,389 (196)

An Experimentally-Validated Verilog-A SPAD Model Extracted from TCAD Simulation [PDF]

, 2018
Single-photon avalanche diodes (SPAD) are photodetectors with exceptional characteristics. This paper proposes a new approach to model them in Verilog-A HDL with the help of a powerful tool: TCAD simulation. Besides, to the best of our knowledge, this is
Carmona Galán, Ricardo, López Martínez, Juan Manuel, Rodríguez Vázquez, Ángel Benito, Vornicu, Ion   +3 more
core   +1 more source

Progress Toward Efficient Wide‐Gap Cu(In,Ga)(S,Se)2 Thin‐Film Solar Cells

Progress in Photovoltaics: Research and Applications, EarlyView.
Wide‐gap Cu (In,Ga)(S,Se)2 thin‐film solar cells are studied in view of their performance, limitations, and opportunities for further optimization. Different sources of open circuit voltage limitations were discussed and weighted. Interface recombination appears the main recombination channel, which however can be influenced heavy alkali treatment ...
Setareh Zahedi‐Azad, Roland Scheer, Dimitrios Hariskos, Stefan Paetel, Wolfram Hempel, Wolfram Witte, Hao Luo, Oana Cojocaru‐Mirédin, Mary Blankenship, Dirk Hauschild, Victor van Maris, Lothar Weinhardt, Clemens Heske, Thomas Unold, José A. Márquez, Jasmin Seeger, Florian Wilhelmi, Michael Hetterich, Thomas Niesen, Patrick Eraerds, Thomas Dalibor, Xiaowei Jin, Reinhard Schneider, Dagmar Gerthsen, Di Wang, Christian Kübel   +25 more
wiley   +1 more source

On the Electron Transport in Simplified IBC‐SHJ Solar Cells With MoOx Blanket Layer

Progress in Photovoltaics: Research and Applications, EarlyView.
In this work, we present a study of electron transport through a novel (n)nc‐Si:H/MoOx stack to improve the understanding and performance of simplified IBC‐SHJ solar cells with MoOx blanket layer. The champion solar cell fabricated with the optimized contact stack and metalized with copper electroplating enables efficiencies beyond 23.5%.
Katarina Kovačević, Yifeng Zhao, Paul Procel, Liqi Cao, Miro Zeman, Luana Mazzarella, Olindo Isabella   +6 more
wiley   +1 more source

Carrier Mapping in Sub‐2nm Node Nanosheet Transistors with Scanning Spreading Resistance Microscopy

Small Methods, EarlyView.
Within this work, advancements in scanning spreading resistance microscopy (SSRM) allow charge carrier mapping within 5.5 nm‐thick nanosheet channels. Devices subjected to rapid thermal annealing at 950°C show ∼ 5 nm enhanced phosphorus diffusion, with profiles in close agreement with semi‐atomistic process simulations.
Andrea Pondini, Pierre Eyben, Lennaert Wouters, Albert Minj, Thomas Hantschel, Philippe Matagne, Jérôme Mitard, Anne Verhulst   +7 more
wiley   +1 more source

Device Modeling Based on Cost-Sensitive Densely Connected Deep Neural Networks

IEEE Journal of the Electron Devices Society
Engineers used TCAD tools for semiconductor devices modeling. However, it is computationally expensive and time-consuming for advanced devices with smaller dimensions.
Xiaoying Tang, Zhiqiang Li, Lang Zeng, Hongwei Zhou, Xiaoxu Cheng, Zhenjie Yao   +5 more
doaj   +1 more source

Spectrally Tuned Floating‐Gate Synapse Based on Blue‐ and Red‐Absorbing Organic Molecules for Wavelength‐Selective Neural Networks and Fashion Image Classifications

Advanced Functional Materials, Volume 36, Issue 13, 12 February 2026.
The characteristics of a vertical floating gate heterostructure transistor device that exhibits neuromorphic potentiation under visible light illumination are investigated. Due to spectrally‐tuned absorbance properties of each thin film layer and introduction of tunneling dielectric, the device enables wavelength‐selective tuning of synaptic plasticity
Seungme Kang, Jisoo Park, Jinwoong Hong, Jinmin Park, Jeongbo Lee, Hyeonjung Kim, Wonjun Shin, Eva Bestelink, Radu A. Sporea, Seyong Oh, Chung Whan Lee, Yun‐Hi Kim, Hocheon Yoo   +12 more
wiley   +1 more source

Development of New 3D Pixel Sensors for Phase 2 Upgrades at LHC

, 2016
We report on the development of new 3D pixel sensors for the Phase 2 Upgrades at the High-Luminosity LHC (HL-LHC). To cope with the requirements of increased pixel granularity (e.g., 50x50 or 25x100 um2 pixel size) and extreme radiation hardness (up to a
Betta, Gian-Franco Dalla, Boscardin, Maurizio, Mendicino, Roberto, Ronchin, Sabina, Sultan, DMS, Zorzi, Nicola   +5 more
core   +1 more source

Modelling and simulation of advanced semiconductor devices [PDF]

, 2017
This paper presents a modelling and simulation study of advanced semiconductor devices. Different Technology Computer Aided Design approaches and models, used in nowadays research are described here.
Adamu-Lema, Fikru, Al-Ameri, T., Asenov, Asen, Berrada, Salim, Duan, Meng, Georgiev, Vihar, Lee, Jaehyun   +6 more
core   +1 more source

Using Bayesian Optimization to Increase the Efficiency of III‐V Multijunction Solar Cells

Advanced Theory and Simulations, Volume 9, Issue 2, February 2026.
Technology Computer Aided Design (TCAD) modeling is crucial for designing complex optoelectronic devices like III‐V multijunction solar cells. Bayesian optimization is proposed as a robust method to address challenges in optimizing costly black‐box TCAD solvers.
Pablo F. Palacios, Carlos Algora
wiley   +1 more source

Description of radiation damage in diamond sensors using an effective defect model

, 2017
The BCML system is a beam monitoring device in the CMS experiment at the LHC. As detectors poly-crystalline diamond sensors are used. Here high particle rates occur from the colliding beams scattering particles outside the beam pipe.
Dabrowski, Anne, de Boer, Wim, Guthoff, Moritz, Kassel, Florian   +3 more
core   +1 more source