Results 71 to 80 of about 5,839,066 (223)
Review of Memristors for In‐Memory Computing and Spiking Neural Networks
Advanced Intelligent Systems, Volume 8, Issue 3, March 2026.Memristors uniquely enable energy‐efficient, brain‐inspired computing by acting as both memory and synaptic elements. This review highlights their physical mechanisms, integration in crossbar arrays, and role in spiking neural networks. Key challenges, including variability, relaxation, and stochastic switching, are discussed, alongside emerging ...
Mostafa Shooshtari +2 more
wiley +1 more source
A SiC Power MOSFET Model With an Improved Description of the JFET Region
IET Power ElectronicsBased on the technology computer‐aided design (TCAD) simulation, a SPICE model of vertical silicon carbide power metal‐oxide‐semiconductor field effect transistor has been proposed with an improved description of the junction‐type field effect transistor
Xiangzhen Li +6 more
doaj +1 more source
Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer
Micromachines, 2019 A novel AlGaN/GaN high-electron-mobility transistor (HEMT) with a high gate and a multi-recessed buffer (HGMRB) for high-energy-efficiency applications is proposed, and the mechanism of the device is investigated using technology computer aided design ...
Shunwei Zhu +7 more
doaj +1 more source
Advanced Intelligent Systems, Volume 8, Issue 3, March 2026.This work presents a hybrid model for predicting the electrical characteristics of fin‐shaped field‐effect transistor devices and SRAM with line edge roughness. The model consists of a convolutional neural network (CNN) and an analytical model that simulates the electrical characteristics of transistors using the outputs of CNN, enabling fast and ...
Jaehyuk Lim +4 more
wiley +1 more source
Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate
AIP Advances, 2017 In order to study the effect of self-heating of AlGaN/ GaN high electron mobility transistors (HEMTs) characteristics fabricated on Si(111) substrate, simulations of 2DEG temperature on different drain voltages have been carried out by Sentaurus TCAD ...
Adarsh Nigam +5 more
doaj +1 more source
TCAD Simulation Study of ESD Behavior of InGaAs/InP Heterojunction Tunnel FETs
Crystals, 2020 For the first time, we investigated the electrostatic discharge (ESD) behavior of an InGaAs/InP heterojunction tunneling field effect transistor (HTFET). The device structure in this study has a high on-state current without extra process steps.
Zhihua Zhu +5 more
doaj +1 more source
TCAD simulations of radiation damage in 4H-SiC
Microelectronic Engineering4 pages, 4 ...
Burin, Jürgen +5 more
openaire +2 more sources
Detection limit of a VCO based detection chain dedicated to particles recognition and tracking
EPJ Web of Conferences, 2018 A particle detection chain based on CMOS-SOI VCO circuit is presented. The solution is used for the recognition and the tracking of a given particle at circuit level.
Coulié K. +4 more
doaj +1 more source
Carrier Mapping in Sub‐2nm Node Nanosheet Transistors with Scanning Spreading Resistance Microscopy
Small Methods, Volume 10, Issue 5, 9 March 2026.Within this work, advancements in scanning spreading resistance microscopy (SSRM) allow charge carrier mapping within 5.5 nm‐thick nanosheet channels. Devices subjected to rapid thermal annealing at 950°C show ∼ 5 nm enhanced phosphorus diffusion, with profiles in close agreement with semi‐atomistic process simulations.
Andrea Pondini +7 more
wiley +1 more source
DC Characteristics Optimization of a Double G-Shield 50 V RF LDMOS
Advances in Condensed Matter Physics, 2015 An N-type 50 V RF LDMOS with a RESURF (reduced surface field) structure of dual field plates (grounded shield, or G-shield) was investigated. The effect of the two field plates and N-drift region, including the junction depth and dopant concentration, on
Xiangming Xu +7 more
doaj +1 more source