Results 1 to 10 of about 10,498 (226)

P-Type Tunnel FETs With Triple Heterojunctions

IEEE Journal of the Electron Devices Society, 2016
A triple-heterojunction (3HJ) design is employed to improve p-type InAs/GaSb heterojunction (HJ) tunnel FETs. Atomistic quantum transport simulations show, that the added two HJs (AlInAsSb/InAs in the source and GaSb/AlSb in the channel) significantly ...
Jun Z. Huang, Pengyu Long, Michael Povolotskyi, Gerhard Klimeck, Mark J. W. Rodwell   +4 more
doaj   +3 more sources

Design of a gate-all-around arch-shaped tunnel-field-effect-transistor-based capacitorless DRAM [PDF]

Discover Nano
In this study, we designed and analyzed a single-transistor dynamic random-access memory (1 T-DRAM) based on an arch-shaped gate-all-around tunnel field-effect transistor (GAA ARCH-TFET), featuring an Si/SiGe heterostructure, for high-density memory ...
Seung Ji Bae, Sang Ho Lee, Jin Park, Min Seok Kim, Jeong Woo Hong, Won Suk Koh, Gang San Yun, Jaewon Jang, Jin-Hyuk Bae, In Man Kang   +9 more
doaj   +2 more sources

Fringe-fields-modulated double-gate tunnel-FET biosensor [PDF]

Scientific Reports
This paper aims to evaluate a groundbreaking bio-TFET that utilizes the fringe fields capacitance concept to detect neutral and charged biomolecules. While facilitating fabrication process and scalability, this innovative bio-TFET is able to rival the ...
Iman Chahardah Cherik, Saeed Mohammadi
doaj   +2 more sources

Novel Ge-Based Plasma TFET with High Rectification Efficiency for 2.45 GHz Microwave Wireless Weak Energy Transmission [PDF]

Micromachines
The enhancement of rectification efficiency in 2.45 GHz microwave wireless weak energy transmission systems is centred on rectifier device selection.
Weifeng Liu, Sihan Bi, Jianjun Song
doaj   +2 more sources

Performance Evaluation of Epitaxial Layer Based Gate Modulated TFET (GM-TFET) [PDF]

Silicon, 2021
Abstract This paper reports the performance of an epitaxial layer (ETL) based gate modulated (GM-TFET) through 3D Technology Computer Aided Design (TCAD) simulations. The architecture utilizes effects of both vertical tunneling and lateral tunneling phenomena to improve the device performance.
Rajesh Saha, Rupam Goswami, Brinda Bhowmick, Srimanta Baishya   +3 more
openaire   +1 more source

Optimization of Tunnel Field-Effect Transistor-Based ESD Protection Network

Crystals, 2021
The tunnel field-effect transistor (TFET) is a potential candidate for replacing the reverse diode and providing a secondary path in a whole-chip electrostatic discharge (ESD) protection network.
Zhihua Zhu, Zhaonian Yang, Xiaomei Fan, Yingtao Zhang, Juin Jei Liou, Wenbing Fan   +5 more
doaj   +1 more source

Study of Electrical Performance of Hetero-Dielectric Gate Tunnel Field Effect Transistor (HDG TFET): A Novel Structure for Future Nanotechnology

Journal of Engineering Technology and Applied Physics, 2022
Although, dynamic power in portable mobile devices can be reduced by reducing power supply VDDon the cost of increased leakage current. Therefore, maintaining low leakage current in the device is serious issue for minimizing overall ...
Tan Chun Fui, Ajay Kumar Singh, Lim Way Soong   +2 more
doaj   +1 more source

Simulation of Dual-Material Hetero-Double Gate Tunnel Field Effect Transistor (TFET) in Sub-Micron Region

Journal of Engineering Technology and Applied Physics, 2023
To meet the performance requirements of low power mobile devices, a device with a high ION/IOFF ratio at low-VDD is needed. TFETs are gaining popularity due to their low subthreshold slope and high transconductance compared to MOSFETs.
Tan Chun Fui, Ajay Kumar Singh
doaj   +1 more source

Temperature dependence of analogue/RF performance, linearity and harmonic distortion for dual‐material gate‐oxide‐stack double‐gate TFET

IET Circuits, Devices and Systems, 2021
This article presents an investigation report of the effects of temperature variation in the range of 300 to 480 K on electrical performance parameters of conventional dual‐material double‐gate tunnel field effect transistor (DMDG‐TFET) and dual‐material
Satyendra Kumar
doaj   +1 more source

Investigation of Radiation Hardened TFET SRAM Cell for Mitigation of Single Event Upset

IEEE Journal of the Electron Devices Society, 2020
This study analyzes the soft error sensitivity of SRAM cell which employs double-gate tunnel field effect transistor (DG TFET). The mitigation technique for the data recovery after the heavy ion strike is discussed.
M. Pown, B. Lakshmi
doaj   +1 more source