Results 91 to 100 of about 10,498 (226)

Gate Field Plate Structure for Subthreshold Swing Improvement of Si Line-Tunneling FETs

IEEE Access, 2019
Tunnel field-effect transistors (TFETs) are promising for use in ultralow-power applications owing to their distinct band-to-band tunneling operation.
Xiangzhan Wang, Zhouquan Tang, Lei Cao, Jingchun Li, Yang Liu   +4 more
doaj   +1 more source

Comparative Study of Steep Switching Devices for 1T Dynamic Memory

Tecnología en Marcha
This work focuses on understanding the operation and performance of various steep switching devices (subthreshold slope sub 60 mV/decade), namely Thin-Capacitively Coupled Thyristor (TCCT), Field Effect Diode (FED), Zero sub-threshold swing and Zero ...
Nupur Navlakha, Hasan Raza Ansari, Leonard Register, Sanjay Banerjee   +3 more
doaj   +1 more source

Temperature independent current biasing employing TFET

Electronics Letters, 2010
A recent study to a tunnelling field-effect transistor (TFET) reveals interesting temperature behaviour. It is found that the TFET drain current temperature coefficient varies with the applied drain and gate voltage. Explored is a circuit which exploits this unique behaviour of the TFET to achieve temperature independent current biasing.
Guo, P.F., Yang, Y., Samudra, G., Heng, C.H., Yeo, Y.C.   +4 more
openaire   +1 more source

A source drain symmetric and interchangeable bidirectional tunneling field effect transistor

AIP Advances, 2018
A novel bidirectional tunneling field effect transistor with source drain symmetric and interchangeable functions (SDSI BT FET) is proposed in this work.
Xiaoshi Jin, Yunxiang Gao, Xi Liu, Jong-Ho Lee   +3 more
doaj   +1 more source

Universal Charge-Conserving TFET SPICE Model Incorporating Gate Current and Noise

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2016
An analytical compact model for tunnel field-effect transistor (TFET) circuit simulation is extended by adding a gate tunnel current model, a charge-based capacitor model, and a noise model. The equation set is broadly applicable across materials systems
Hao Lu, Wenjun Li, Yeqing Lu, Patrick Fay, Trond Ytterdal, Alan Seabaugh   +5 more
doaj   +1 more source

Performance Assessment of GaAs Pocket-Doped Dual-Material Gate-Oxide-Stack DG-TFET at Device and Circuit Level

IET Circuits, Devices and Systems
This study explores the impact of integrating a gallium arsenide (GaAs) pocket at the source and drain in a dual-material gate-oxide-stack double-gate tunnel field-effect transistor (DMGOSDG-TFET).
Km. Sucheta Singh, Satyendra Kumar, Saurabh Chaturvedi, Kapil Dev Tyagi, Vaibhav Bhushan Tyagi   +4 more
doaj   +1 more source

Electrically Doped PNPN Tunnel Field-Effect Transistor Using Dual-Material Polarity Gate with Improved DC and Analog/RF Performance. [PDF]

Micromachines (Basel), 2023
Shan C, Liu Y, Wang Y, Cai R, Su L.
europepmc   +1 more source

Modeling trap dynamics in oxide-engineered heterostructure TFETs for breast cancer detection. [PDF]

Sci Rep
Ghosh R, Saha P.
europepmc   +1 more source

Graphene Nanowire Based TFETs

, 2020
Jayabrata, Goswami,, Anuva, Ganguly,, Anirudhha, Ghosal,, Prakash, Banerjee, Jyoti   +3 more
openaire   +3 more sources

Study of dielectric modulated dual source triple gate TFET for biosensing applications. [PDF]

Discov Nano
Cui G, Xu H.
europepmc   +1 more source