Results 11 to 20 of about 10,498 (226)
Investigation of Single-Event-Transient Effects Induced by Heavy-Ion in All-Silicon DG-TFET
IEEE Access, 2022 The heavy-ion analysis is a single-event-effect (SEE) that produces a single-event-transient (SET) pulse of current. In this work, the analysis was done to observe the maximum impact of heavy-ions on a calibrated double-gate tunnel field-effect ...
Ashish Maurya +3 more
doaj +2 more sources
Discover Nano, 2023 This study presents a gate-all-around InAs–Si vertical tunnel field-effect transistor with a triple metal gate (VTG-TFET). We obtained improved switching characteristics for the proposed design because of the improved electrostatic control on the channel
Dariush Madadi, Saleh Mohammadi
semanticscholar +1 more source
Modeling and Simulation of a TFET-Based Label-Free Biosensor with Enhanced Sensitivity
Chemosensors, 2023 This study discusses the use of a triple material gate (TMG) junctionless tunnel field-effect transistor (JLTFET) as a biosensor to identify different protein molecules. Among the plethora of existing types of biosensors, FET/TFET-based devices are fully
Sagarika Choudhury +5 more
semanticscholar +1 more source
Engineering Research Express, 2023 In this article, a dual-metal double-gate extended-source PNPN tunnel-FET (DG-ES-DMG TFET) is proposed and investigated. The performance of conventional double-gate PNPN TFET (DG TFET) can be improved by extending a portion of the source to the channel ...
Karabi Baruah, S. Baishya
semanticscholar +1 more source
IET Circuits, Devices and Systems, 2021 In this study, the authors propose a work function engineered (WFE) triple metal (TM) tunnel field‐effect transistor (TFET) device, which exhibits lower subthreshold slope (SS) and better on to off current ratio in comparison with conventional double ...
Ria Bose, Jatindra Nath Roy
doaj +1 more source
A battery-less, self-sustaining RF energy harvesting circuit with TFETs for µW power applications [PDF]
, 2016 This paper proposes a Tunnel FET (TFET) power management circuit for RF energy harvesting applications. In contrast with conventional MOSFET technologies, the improved electrical characteristics of TFETs promise a better behavior in the process of ...
Moll Echeto, Francisco de Borja +2 more
core +1 more source
Fabrication and Electrical Characteristics of ZnSnO/Si Bilayer Tunneling Filed-Effect Transistors
IEEE Journal of the Electron Devices Society, 2019 We demonstrate improvement of electrical characteristics of a bilayer tunneling field effect transistor (TFET) composed of an n-type zinc-tin-oxide (ZnSnO) channel with superior thickness uniformity and a p-type Si source.
Kimihiko Kato +4 more
doaj +1 more source
Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness
Nanoscale Research Letters, 2020 Double-gate tunnel field-effect transistor (DG TFET) is expected to extend the limitations of leakage current and subthreshold slope. However, it also suffers from the ambipolar behavior with the symmetrical source/drain architecture.
Maolin Zhang +4 more
doaj +1 more source
In-Line Tunnel Field Effect Transistor: Drive Current Improvement
IEEE Journal of the Electron Devices Society, 2018 A new architecture of tunnel field effect transistor (TFET) with in-line (vertical) tunneling area is introduced. By adding the vertical tunneling area, the in-line TFET architecture outperformed the normal TFET in terms of the drive current, the ...
Woojin Park +3 more
doaj +1 more source
Applied Sciences, 2020 In this paper, analysis and optimization of surrounding channel nanowire (SCNW) tunnel field-effect transistor (TFET) has been discussed with the help of technology computer-aided design (TCAD) simulation.
Seung-Hyun Lee +5 more
doaj +1 more source