Results 21 to 30 of about 10,498 (226)
F-Shaped Tunnel Field-Effect Transistor (TFET) for the Low-Power Application
Micromachines, 2019 In this report, a novel tunnel field-effect transistor (TFET) named ‘F-shaped TFET’ has been proposed and its electrical characteristics are analyzed and optimized by using a computer-aided design simulation.
Seunghyun Yun +6 more
doaj +1 more source
Improved bilayer phosphorene TFET inverter performance by reduction of ambipolarity
AIP Advances, 2018 A comprehensive study on the degradation of inverter output voltage based on double-gated (DG) bilayer Phosphorene complementary tunnel-FETs is presented.
Dip Joti Paul, Quazi D. M. Khosru
doaj +1 more source
A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance
Nanoscale Research Letters, 2020 In this paper, a dopingless fin-shaped SiGe channel TFET (DF-TFET) is proposed and studied. To form a high-efficiency dopingless line tunneling junction, a fin-shaped SiGe channel and a gate/source overlap are induced.
Shupeng Chen +5 more
doaj +1 more source
Insights into tunnel FET-based charge pumps and rectifiers for energy harvesting applications [PDF]
, 2017 In this paper, the electrical characteristics of tunnel field-effect transistor (TFET) devices are explored for energy harvesting front-end circuits with ultralow power consumption.
Moll Echeto, Francisco de Borja +2 more
core +2 more sources
Improving ESD Protection Robustness Using SiGe Source/Drain Regions in Tunnel FET
Micromachines, 2018 Currently, a tunnel field-effect transistor (TFET) is being considered as a suitable electrostatic discharge (ESD) protection device in advanced technology.
Zhaonian Yang +3 more
doaj +1 more source
Applied Sciences, 2020 Metal gate technology is one of the most important methods used to increase the low on-current of tunnel field-effect transistors (TFETs). However, metal gates have different work-functions for each grain during the deposition process, resulting in work ...
Garam Kim +3 more
doaj +1 more source
npj 2D Materials and Applications, 2022 The continuously intensifying demand for high-performance and miniaturized semiconductor devices has pushed the aggressive downscaling of field-effect transistors (FETs) design.
Sayan Kanungo +4 more
doaj +1 more source
Random dopant-induced variability in Si-InAs nanowire tunnel FETs: a quantum transport simulation study [PDF]
, 2018 In this letter, we report a quantum transport simu- lation study of the impact of Random Discrete Dopants (RDD)s on Si-InAs nanowire p-type Tunnel FETs.
Adamu-Lema, Fikru +7 more
core +1 more source
Micromachines, 2019 L-shaped tunnel field-effect transistor (TFET) provides higher on-current than a conventional TFET through band-to-band tunneling in the vertical direction of the channel.
Junsu Yu +7 more
doaj +1 more source
Engineering interband tunneling in nanowires with diamond cubic or zincblende crystalline structure based on atomistic modeling [PDF]
, 2013 We present an investigation in the device parameter space of band-to-band tunneling in nanowires with a diamond cubic or zincblende crystalline structure.
D'Amico, Pino +3 more
core +2 more sources