Results 31 to 40 of about 10,498 (226)

Study of line-TFET analog performance comparing with other TFET and MOSFET architectures [PDF]

Solid-State Electronics, 2017
Abstract In this work the Line-TFET performance is compared with MOSFET and Point-TFET devices, with different architectures (FinFET and GAA:Gate-All-Around) at both room and high temperatures. This analysis is based on the experimental basic analog parameters such as transconductance (gm), output conductance (gD) and intrinsic voltage gain (AV ...
Agopian, Paula Ghedini Der, Martino, João Antonio, Vandooren, Anne, Rooyackers, Rita, Simoen, Eddy, Thean, Aaron, Claeys, Cor   +6 more
openaire   +3 more sources

High-Performance Dielectric Modulated Epitaxial Tunnel Layer Tunnel FET for Label-Free Detection of Biomolecules

IEEE Open Journal of Nanotechnology
In this paper, using calibrated simulation we have reported a dielectric modulated epitaxial tunnel layer TFET (DM ETL-TFET) for the label-free detection of biomolecules. We have shown that due to vertical tunneling direction, the ETL-TFET exhibits $\sim$
Kunal Aggarwal, Avinash Lahgere
doaj   +1 more source

Impact of Strain on Drain Current and Threshold Voltage of Nanoscale Double Gate Tunnel Field Effect Transistor: Theoretical Investigation and Analysis

, 2010
Tunnel field effect transistor (TFET) devices are attractive as they show good scalability and have very low leakage current. However they suffer from low on-current and high threshold voltage.
Aydin, Bhuwalka, Bhuwalka, Bhuwalka, Boucart, Choi, Dhar, Dobrovolsky, Hansch, Hurkx, Lim, M. Jagadesh Kumar, Nagavarapu, Nirschl, Numata, Reddick, Sedlmaier, Shen, Sneh Saurabh, Takagi, Tehrani, Uemura, Wang, Wang, Zhang, Zhang   +25 more
core   +1 more source

Design Guidelines for Gate-Normal Hetero-Gate-Dielectric (GHG) Tunnel Field-Effect Transistors (TFETs)

IEEE Access, 2020
A gate-normal hetero-gate-dielectric (GHG) tunnel field-effect transistor (TFET) and the guidelines for its design are proposed. The introduction of the HG structure into gate-normal TFETs improves device performance by lowering subthreshold swing (SS ...
Jang Woo Lee, Woo Young Choi
doaj   +1 more source

Digital Logic and Asynchronous Datapath With Heterogeneous TFET-MOSFET Structure for Ultralow-Energy Electronics

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020
The tunnel field-effect transistor (TFET) is a promising solution for high energy-efficient circuits. Based on the band-to-band tunneling (BTBT) condition, fast switching characteristic with a steep subthreshold swing (SS) in the ultralow-voltage ...
Jo-Han Hung, Pei-Yu Wang, Yu-Chen Lo, Chih-Wen Yang, Bing-Yue Tsui, Chia-Hsiang Yang   +5 more
doaj   +1 more source

Switching Mechanism and the Scalability of vertical-TFETs

, 2017
In this work, vertical tunnel field-effect transistors (v-TFETs) based on vertically stacked heretojunctions from 2D transition metal dichalcogenide (TMD) materials are studied by atomistic quantum transport simulations. The switching mechanism of v-TFET
Chen, Fan, Ilatikhameneh, Hesameddin, Klimeck, Gerhard, Rahman, Rajib, Tan, Yaohua   +4 more
core   +1 more source

Dielectric Modulated Negative Capacitance Heterojunction TFET as Biosensor: Proposal and Analysis

Silicon
In this article, a label-free biosensor with a single cavity that uses a negative capacitance heterojunction charge-plasma-based tunnel FET (NC-HJ-CP-TFET) is presented and examined. To increase ON-state current, ferroelectric material (Si:HfO2) has been
Varun Mishra, Lucky Agarwal, Chandni Tiwari, Vikas Rathi   +3 more
semanticscholar   +1 more source

The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFET

Nanoscale Research Letters, 2017
The larger volume of capacitor and higher leakage current of transistor have become the inherent disadvantages for the traditional one transistor (1T)-one capacitor (1C) dynamic random access memory (DRAM).
Wei Li, Hongxia Liu, Shulong Wang, Shupeng Chen, Qianqiong Wang   +4 more
doaj   +1 more source

Quantum Transport Simulation of III-V TFETs with Reduced-Order K.P Method

, 2015
III-V tunneling field-effect transistors (TFETs) offer great potentials in future low-power electronics application due to their steep subthreshold slope and large "on" current.
Huang, Jun Z., Klimeck, Gerhard, Long, Pengyu, Povolotskyi, Michael, Zhang, Lining   +4 more
core   +1 more source

Analysis of InAs Vertical and Lateral Band-to-Band Tunneling Transistors: Leveraging Vertical Tunneling for Improved Performance

, 2010
Using self-consistent quantum transport simulation on realistic devices, we show that InAs band-to-band Tunneling Field Effect Transistors (TFET) with a heavily doped pocket in the gate-source overlap region can offer larger ON current and steeper ...
Ganapathi, Kartik, Salahuddin, Sayeef, Yoon, Youngki   +2 more
core   +1 more source