Results 41 to 50 of about 10,498 (226)

Design and Performance Assessment of a Label- free Biosensor utilizing a Novel TFET Configuration

Journal of Integrated Circuits and Systems
The present study presents an innovative idea: an original design for a label-free biosensor utilizing H-shape channel configuration within a dielectrically modulated (DM) double-gate TFET (DGTFET) framework, which includes the incorporation of a drain ...
DP-Rapolu Anil Kumar, K. Sravani, K. Rao
semanticscholar   +1 more source

Strain and Dimension Effects on the Threshold Voltage of Nanoscale Fully Depleted Strained-SOI TFETs

Advances in Condensed Matter Physics, 2015
A novel nanoscale fully depleted strained-SOI TFET (FD-SSOI TFET) is proposed and exhaustively simulated through Atlas Device Simulator. It is found that FD-SSOI TFET has the potential of improved on-current and steep subthreshold swing. Furthermore, the
Yu-Chen Li, He-Ming Zhang, Shu-lin Liu, Hui-Yong Hu   +3 more
doaj   +1 more source

Electrostatically-Doped Hetero-Barrier Tunnel Field Effect Transistor: Design and Investigation

IEEE Access, 2018
In this paper, an electrostatically-doped hetero-barrier tunnel-field-effect-transistor (EDHet-TFET) based on stepped broken-gap (type-III) is simulated, investigated, and compared with the conventionally-doped stepped broken-gap hetero-barrier TFET (Het-
M. Ehteshamuddin, Abdullah G. Alharbi, Sajad A. Loan   +2 more
doaj   +1 more source

High performance Tunnel Field Effect Transistors based on in-plane transition metal dichalcogenide heterojunctions

, 2018
In-plane heterojunction tunnel field effect transistors based on monolayer transition metal dichalcogenides are studied by means of self-consistent non-equilibrium Green's functions simulations and an atomistic tight-binding Hamiltonian.
Choukroun, Jean, Dollfus, Philippe, Fang, Shiang, Kaxiras, Efthimios, Pala, Marco   +4 more
core   +1 more source

Computational design of two‐dimensional MA2Z4 family field‐effect transistor for future Ångström‐scale CMOS technology nodes

InfoMat, EarlyView.
Two‐dimensional MA2Z4 such as MoSi2N4 offer a new path to extend transistor scaling beyond the limits of silicon. Due to their exceptional properties, these 2D semiconductors are promising candidates for future Ångström‐scale CMOS technology. This review outlines the computational design and roadmap bridging materials discovery, device design and ...
Che Chen Tho, Zongmeng Yang, Shibo Fang, Shiying Guo, Liemao Cao, Chit Siong Lau, Fei Liu, Shengli Zhang, Jing Lu, L. K. Ang, Lain‐Jong Li, Yee Sin Ang   +11 more
wiley   +1 more source

A New On-Chip ESD Strategy Using TFETs-TCAD Based Device and Network Simulations

IEEE Journal of the Electron Devices Society, 2018
For the first time, this paper reports the quasi-static behavior and the applicability of the tunnel field effect transistor (TFET) for the on-chip electrostatic discharge (ESD) protection. ESD evaluations are performed on 28-nm fully depleted silicon-on-
Radhakrishnan Sithanandam, Mamidala Jagadesh Kumar   +1 more
doaj   +1 more source

Design and analysis of hetero-dielectric Junctionless-TFET(JL-TFET) with N+ pocket as label free biosensors

Physica Scripta
This paper includes sensitivity assessment of label-free biosensors using hetero dielectric Junctionless-TFET (HD-JL-TFET) thorough TCAD simulator. The fundamental structure, operation and design of a Junctionless-TFET (HD-JL-TFET) as biosensor are ...
Meghna Kumawat, G. Gopal, Tarun Varma
semanticscholar   +1 more source

Model of tunneling transistors based on graphene on SiC

, 2010
Recent experiments shown that graphene epitaxially grown on Silicon Carbide (SiC) can exhibit a energy gap of 0.26 eV, making it a promising material for electronics.
Giuseppe Iannaccone, Grassi R., Martina Cheli, Paolo Michetti   +3 more
core   +1 more source

A Comprehensive Review on Tunnel Field-Effect Transistor (TFET) Based Biosensors: Recent Advances and Future Prospects on Device Structure and Sensitivity

Silicon, 2020
In this fast-growing technological world biosensors become more substantial in human life and the extensive use of biosensors creates enormous research interest among researchers to define different approaches to detect biomolecules.
N. Reddy, D. Panda
semanticscholar   +1 more source

Electrical Transport of Nb‐Doped MoS2 Homojunction P–N Diode: Investigating NDR and Avalanche Effect

Small, Volume 22, Issue 9, 12 February 2026.
Niobium (Nb)‐doped molybdenum disulfide (MoS2) p‐type–n‐type (p–n) homojunction diodes are engineered using thickness‐controlled homo‐interfaces. Current–voltage (I–V) characteristics reveal gate‐tunable rectification, wavelength‐dependent photoresponse, and low‐bias switching.
Ehsan Elahi, Umer Ahsan, Muhammad Farooq Khan, Jamal Aziz, Payal Chauhan, Paweł Piotr Michałowski, Yuan Chen, Goki Eda, Martin Loula, Kalyan Jyoti Sarkar, Zdenek Sofer   +10 more
wiley   +1 more source