Results 51 to 60 of about 10,498 (226)
Design of 7T SRAM Using InGaAs-Dual Pocket-Dual Gate-Tunnel FET for IoT Applications
IEEE Access, 2023 The Internet of Things (IoT) is becoming increasingly popular in areas like wearable communication devices, biomedical devices, and home automation systems.
Gadarapulla Rasheed +1 more
doaj +1 more source
Design Rules for High Performance Tunnel Transistors from 2D Materials
, 2016 Tunneling field-effect transistors (TFETs) based on 2D materials are promising steep sub-threshold swing (SS) devices due to their tight gate control. There are two major methods to create the tunnel junction in these 2D TFETs: electrical and chemical ...
Appenzeller, Joerg +3 more
core +1 more source
Neuromorphic Device Based on Material and Device Innovation toward Multimode and Multifunction
Advanced Intelligent Systems, Volume 8, Issue 1, January 2026.In the era of big data, multimodal and multifunctional neuromorphic devices offer significant opportunities in designing AI hardware. In this work, recent advances about emerging material systems and novel device structures in this field are summarized in detail. Potential applications are reviewed.
Feng Guo +3 more
wiley +1 more source
IEEE Journal of the Electron Devices Society, 2019 Using a tight-binding mode-space NEGF technique, we explore the essential physics, design and performance potential of the III-V core-shell (CS) nanowire (NW) heterojunction tunneling field-effect transistor (TFET).
Aryan Afzalian +4 more
doaj +1 more source
Micro &Nano Letters, Volume 21, Issue 1, January/December 2026.This study presents a numerical quantum transport analysis of graphene nanoribbon field‐effect transistors (GNRFETs) using the non‐equilibrium Green's function (NEGF) formalism. The results show that reducing the channel length and optimizing dielectric materials, such as HfSiO4, significantly enhance ON‐state current and the Ion/Ioff ratio.
Mahamudul Hassan Fuad
wiley +1 more source
Graphene antidot nanoribbon tunnel field‐effect transistor
Micro & Nano Letters, 2022 A graphene nanoribbon tunnel field‐effect transistor (TFET) model is proposed, in which the antidot pattern is used to generate the heterojunction (HJ) band structure.
Zhixing Xiao
doaj +1 more source
Scalable GaSb/InAs tunnel FETs with non-uniform body thickness
, 2016 GaSb/InAs heterojunction tunnel field-effect transistors are strong candidates in building future low-power integrated circuits, as they could provide both steep subthreshold swing and large ON-state current ($I_{\rm{ON}}$).
Huang, Jun Z. +4 more
core +1 more source
Advanced Materials, Volume 37, Issue 50, December 17, 2025.HfO2‐based ferroelectric materials are promising for next‐generation memory technologies by providing outstanding performance aligning with data‐centric computing needs. This review details recent advancements in materials, devices, and integration for HfO2‐based memories, with the goal of identifying both the technological opportunities and remaining ...
Zuopu Zhou +9 more
wiley +1 more source
Investigation of gate leakage current in TFET: A semi-numerical approach
Alexandria Engineering Journal, 2023 Tunneling FET (TFET) has been demonstrated as a favorable candidate to replace conventional MOSFETs in low-power applications. However, there are many challenges that should be overcome to efficiently operate the TFET.
N.M.S. Tawfik +6 more
doaj +1 more source
, 2013 In this paper, we present a mode space method for atomistic non-equilibrium Green's function simulations of armchair graphene nanoribbon FETs that includes electron-phonon scattering. With reference to both conventional and tunnel FET structures, we show
Baccarani, Giorgio +5 more
core +1 more source