Results 61 to 70 of about 10,498 (226)

TFET Biosensor Simulation and Analysis for Various Biomolecules

Silicon, 2021
This paper investigates the simulation and performance of Tunnel field effect transistor (TFET) with a nanocavity in it, which can be used for bio sensing application. The entire simulation is done using the tool Silvaco Atlas TCAD.
P. Vimala, Likith Krishna L, Sharma Ss, Rakshanda Ainapur, Swetha Rh   +4 more
semanticscholar   +1 more source

Time‐Domain Content‐Addressable Memory Based on Single Ambipolar Ferroelectric Memcapacitor for High‐Density and Highly‐Precise Distance Function Computation

Advanced Electronic Materials, Volume 11, Issue 20, December 3, 2025.
A high‐density and highly‐reliable capacitive time‐domain (TD) content‐addressable memory (CAM) based on a single ambipolar ferroelectric memcapacitor with band‐reject‐filter‐shaped capacitance‐voltage characteristics is proposed. The proposed TD CAM performs linear Hamming distance computation via propagation delay modulation, achieving improved ...
Minjeong Ryu, Jae Seung Woo, Yeonwoo Kim, Joo Hyeon Jeon, Sung In Cho, Woo Young Choi   +5 more
wiley   +1 more source

Comparative performance analysis of different gate structure engineering on double gate tunnel FET

Next Materials
Through band-to-band tunneling, Tunnel Field Effect Transistors (TFETs) reduce leakage and subthreshold swing, giving them an advantage over MOSFET. However, ambipolar conduction and low ON state current are problems with traditional TFET.
Sudha Subhalaxmi Muduli, Ananya Dastidar, Aruna Tripathy, Sukanta Kumar Swain   +3 more
doaj   +1 more source

Gate Field‐Induced Dynamic Schottky Barrier Height Reduction in Bilayer MoS2 for Sub‐60 mV/dec Schottky Barrier FETs

Advanced Electronic Materials, Volume 11, Issue 21, December 17, 2025.
Vertical electric‑field‑induced bandgap narrowing in bilayer MoS2 dynamically reduces the Schottky barrier height, achieving sub‑60 mV/dec switching. Incorporating band‑edge shifts estimated from DFT results into transport simulations, the bilayer MoS2 SB‑FET achieves a 44.7 mV/dec subthreshold swing and 38 % faster CMOS inverter switching with 5 ...
Gyeong Min Seo, Jeong Wook Kim, Byoung Don Kong   +2 more
wiley   +1 more source

Drive Current Enhancement in TFET by Dual Source Region

Journal of Electrical and Computer Engineering, 2015
This paper presents tunneling field-effect transistor (TFET) with dual source regions. It explores the physics of drive current enhancement. The novel approach of dual source provides an effective technique for enhancing the drive current.
Zhi Jiang, Yiqi Zhuang, Cong Li, Ping Wang, Yuqi Liu   +4 more
doaj   +1 more source

Numerical Investigations of Nanowire Gate-All-Around Negative Capacitance GaAs/InN Tunnel FET

IEEE Access, 2022
We demonstrated a nanowire gate-all-around (GAA) negative capacitance (NC) tunnel field-effect transistor (TFET) based on the GaAs/InN heterostructure using TCAD simulation.
Abdullah Al Mamun Mazumder, Kamal Hosen, Md. Sherajul Islam, Jeongwon Park   +3 more
doaj   +1 more source

Engineering SnSe Isolated State Steep‐Slope MOSFETs for High‐Performance Applications

Advanced Electronic Materials, Volume 11, Issue 20, December 3, 2025.
Steep‐slope MOSFETs for high‐performance and low‐power applications are achieved by applying asymmetric underlap, strain, and a gate‐all‐around design. Abstract To overcome Boltzmann thermal limitation, the study investigates isolated‐state field‐effect transistors based on armchair SnSe nanoribbons using first‐principles calculations and quantum ...
Lu Qin, Juan Lyu, Shenyuan Yang, Shun Song, Jian Gong   +4 more
wiley   +1 more source

Impacts of Work Function Variation and Line-Edge Roughness on TFET and FinFET Devices and 32-Bit CLA Circuits

Journal of Low Power Electronics and Applications, 2015
In this paper, we analyze the variability of III-V homojunction tunnel FET (TFET) and FinFET devices and 32-bit carry-lookahead adder (CLA) circuit operating in near-threshold region.
Yin-Nien Chen, Chien-Ju Chen, Ming-Long Fan, Vita Pi-Ho Hu, Pin Su, Ching-Te Chuang   +5 more
doaj   +1 more source

A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter

IEEE Access, 2020
A novel planar architecture is proposed for tunnel field-effect transistors (TFETs). The advantages of this architecture are exhibited, taking the InAs/Si TFET as an example, and the effects of different device parameters are analyzed in detail. Owing to
Shizheng Yang, Hongliang Lv, Bin Lu, Silu Yan, Yuming Zhang   +4 more
doaj   +1 more source

Nanowire gate all around-TFET-based biosensor by considering ambipolar transport

Applied Physics A, 2021
This work investigated the performance of overlapped gate-on-drain of a gate all around-tunnel field-effect transistor (GAA-TFET) biosensors by considering the dielectric modulated technique by immobilizing the targeted biomolecules in the cavity region ...
N. Reddy, D. Panda
semanticscholar   +1 more source