Results 71 to 80 of about 10,498 (226)
Gallium Nitride in Heterogeneous Photocatalysis: Fundamental Insights and Emerging Trends
ChemistryEurope, Volume 3, Issue 6, November 11, 2025.Gallium nitride is a binary III–V direct band gap semiconductor. Recently, it has emerged as a promising material for next‐generation heterogeneous photocatalytic systems due to its unique electronic and structural properties. This review outlines the fundamental principles and key design strategies of heterogeneous photocatalysis and provides a ...
Hyotaik Kang, Chao‐Jun Li
wiley +1 more source
IEEE Journal of the Electron Devices Society, 2018 In this paper, a new tunnel FET (TFET)-based power management circuit (PMC) is proposed for weak dc energy harvesting sources. Thanks to their particular carrier injection mechanisms, TFETs can be used to design efficient energy harvesting circuits by ...
David Nunes Cavalheiro +2 more
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Illuminating Quantum Phenomena in 2D Materials: The Power of Optical Spectroscopy
Advanced Optical Materials, Volume 13, Issue 31, November 5, 2025.Atomically thin 2D materials host quantum tunnelling, plasmonic and excitonic phenomena driven by reduced dimensionality and strong many‐body interactions. This review links these effects to state‐of‐the‐art optical probes—NSOM, pump–probe, CARS, TRR, and optical frequency comb spectroscopy—highlighting how their ultrahigh spatial–temporal resolution ...
Yuhui Zhou +4 more
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Monolayer BX (X = P, As, Sb): Emerging High‐Performance Channel Materials for Advanced Transistors
Advanced Electronic Materials, Volume 11, Issue 18, November 4, 2025.Using a first‐principles quantum transport approach, the intrinsic transport properties of 2D BX (X = P, As, Sb) materials are investigated. These materials exhibit high on‐currents and excellent ambipolar symmetry in MOSFET configurations, and break the Boltzmann limit of subthreshold swing in TFETs while maintaining high and symmetric bipolar ...
Shuai Lang +4 more
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Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET
IEEE Journal of the Electron Devices Society, 2016 A bilayer graphene-based electrostatically doped tunnel field-effect transistor (BED-TFET) is proposed. Unlike graphene nanoribbon TFETs in which the edge states deteriorate the OFF-state performance, BED-TFETs operate based on bandgaps induced by ...
Fan W. Chen +4 more
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From All-Si Nanowire TFETs Towards III-V TFETs
, 2012 Performance improvement by device scaling has been the prevailing method in the semiconductor industry over the past four decades. However, current silicon transistor technology is approaching a fundamental limit where scaling does not improve device performance.
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From Classical Ferroelectricity to Emerging Low‐Dimensional Phases
Advanced Physics Research, Volume 4, Issue 11, November 2025.Ferroelectricity is undergoing a renaissance, moving from classical perovskites to hafnia‐based thin films and low‐dimensional van der Waals crystals. Recent advances reveal exotic polarization mechanisms, ultrathin stability, and coupling with topology and valley physics.
Marius Adrian Husanu, Dana G. Popescu
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High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor
Micromachines, 2019 A drain engineered InGaN heterostructure tunnel field effect transistor (TFET) is proposed and investigated by Silvaco Atlas simulation. This structure uses an additional metal on the drain region to modulate the energy band near the drain/channel ...
Xiaoling Duan +6 more
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Nano Select, Volume 6, Issue 11, November 2025.In this study, we analyzed the sensing characteristics of a MoS₂‐based dual‐drain, dual‐gate Schottky tunnel field effect transistor (DD‐DG‐STFET) based on the hybridization process to achieve ground breaking sensitivity. DD‐DG‐STFET sensitivity was calculated by examining steric hindrance across various patterns, including concave and convex, as well ...
Anusuya Periyasami, Prashanth Kumar
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Tunnel Field-Effect Transistors: Prospects and Challenges
IEEE Journal of the Electron Devices Society, 2015 The tunnel field-effect transistor (TFET) is considered a future transistor option due to its steep-slope prospects and the resulting advantages in operating at low supply voltage (VDD). In this paper, using atomistic quantum models that are in agreement
Uygar E. Avci +2 more
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