Results 81 to 90 of about 10,498 (226)
An Elegant Method of One‐Pot Ligation‐Desulfurization for High‐Yielding Chemical Protein Synthesis
Advanced Science, Volume 12, Issue 38, October 13, 2025.A one‐pot native chemical ligation and desulfurization method has been developed for efficient chemical protein synthesis. This unique approach uses bromoacetamide and N‐acetyl cysteine to selectively quench arylthiol post native chemical ligation.
Vishal Malik +3 more
wiley +1 more source
Tunnel Field-Effect Transistor With Segmented Channel
IEEE Journal of the Electron Devices Society, 2019 A tunnel field-effect transistor with segmented channels (Seg-TFET) on a corrugated substrate is proposed. The Seg-TFET takes advantage of using three stripes and the selective contact configuration to define the direction of current, and thereby its ...
Jaesoo Park, Changhwan Shin
doaj +1 more source
Dual Neural Network Framework with SPICE Integration for Fast and Accurate Transistor Modeling
Advanced Intelligent Systems, Volume 7, Issue 10, October 2025.Neural network (NN)‐based compact transistor models are often deployed and evaluated standalone due to the lack of compatibility with existing simulation program with integrated circuit emphasis (SPICE) software. Herein, the proposed dual‐NN framework with the best trade‐off between high speed and high accuracy is integrated into commercial SPICE ...
Rodion Novkin, Hussam Amrouch
wiley +1 more source
Gate dielectric strength dependent performance of CNT MOSFET and CNT TFET: A tight binding study
Results in Physics, 2016 This paper presents a comparative study between CNT MOSFET and CNT TFET taking into account of different dielectric strength of gate oxide materials.
Md. Shamim Sarker +3 more
doaj +1 more source
Advances in MXene‐Based Electronics via Surface and Structural Redesigning and Beyond
Advanced Electronic Materials, Volume 11, Issue 14, September 4, 2025.Herein, various MXenes surface and structural engineering strategies such as termination control, doping, interlayer design, and heterostructures are reviewed for advanced electronics applications. We discuss how these approaches optimize conductivity, work function, and device integration, enabling breakthroughs in transistors, photodetectors, and ...
Adnan Younis +8 more
wiley +1 more source
Band-Offset Engineering for GeSn-SiGeSn Hetero Tunnel FETs and the Role of Strain
IEEE Journal of the Electron Devices Society, 2015 In this paper a simulation study of the effect of conduction and valence band offsets on the subthreshold swing (SS) of a double-gate tunnel field-effect transistor (TFET) with gate-overlapped source is presented.
Saurabh Sant, Andreas Schenk
doaj +1 more source
Device Physics and Architecture Advances in Tunnel Field‐Effect Transistors
Interdisciplinary Materials, Volume 4, Issue 5, Page 686-708, September 2025.The key for performance breakthroughs in TFET, the most promising beyond‐CMOS transistor, lies in refining the optimal parameters in device physics to advance the material and architecture design. This review summarizes the key points, including electrostatic screening length λ, carrier effective mass m T *, interface‐trap density D it, etc., and ...
Zehan Wu +3 more
wiley +1 more source
Analytical Approach and Simulation of GaN Single Gate TFET and Gate All around TFET
ECTI Transactions on Electrical Engineering, Electronics, and Communications, 2014 In this work, we investigate the impact of Gallium Nitride (GaN) based Single Gate Tunnel field effect transistors (SG TFET) and Gate All Around (GAA) TFET by using analytical models. The models are derived by solving the 2D-Poisson’s equation and Parabolic Approximation Technique.
T.S.Arun Samuel +2 more
openaire +2 more sources
Carbon Nanotube 3D Integrated Circuits: From Design to Applications
Advanced Functional Materials, Volume 35, Issue 34, August 22, 2025.As Moore's law approaches its physical limits, carbon nanotube (CNT) 3D integrated circuits (ICs) emerge as a promising alternative due to the miniaturization, high mobility, and low power consumption. CNT 3D ICs in optoelectronics, memory, and monolithic ICs are reviewed while addressing challenges in fabrication, design, and integration.
Han‐Yang Liu +3 more
wiley +1 more source
1 Transistor‐Dynamic Random Access Memory as Synaptic Element for Online Learning
Advanced Intelligent Systems, Volume 7, Issue 8, August 2025.This work demonstrates the feasibility of utilizing capacitor‐less 1 transistor(1 T)‐dynamic random access memory as synaptic element with multilevel capability, large dynamic range of conductance, high linearity, ultralow energy consumption, high endurance exceeding 1015 cycles, and large integration density for artificial‐intelligence‐of‐things edge ...
MD Yasir Bashir +2 more
wiley +1 more source