Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor. [PDF]
Nat Commun, 2023 Reconfigurable transistors are an emerging device technology adding new functionalities while lowering the circuit architecture complexity. However, most investigations focus on digital applications.
Zhu Z, Persson AEO, Wernersson LE.
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Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain. [PDF]
Micromachines (Basel), 2019 In this paper, a novel tunnel field-effect transistor (TFET) has been demonstrated. The proposed TFET features a SiGe channel, a fin structure and an elevated drain to improve its electrical performance. As a result, it shows high-level ON-state current (
Kim JH, Kim HW, Kim G, Kim S, Park BG.
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Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness. [PDF]
Nanoscale Res Lett, 2020 Double-gate tunnel field-effect transistor (DG TFET) is expected to extend the limitations of leakage current and subthreshold slope. However, it also suffers from the ambipolar behavior with the symmetrical source/drain architecture.
Zhang M, Guo Y, Zhang J, Yao J, Chen J.
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F-Shaped Tunnel Field-Effect Transistor (TFET) for the Low-Power Application. [PDF]
Micromachines (Basel), 2019 In this report, a novel tunnel field-effect transistor (TFET) named ‘F-shaped TFET’ has been proposed and its electrical characteristics are analyzed and optimized by using a computer-aided design simulation.
Yun S +6 more
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High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor. [PDF]
Micromachines (Basel), 2019 A drain engineered InGaN heterostructure tunnel field effect transistor (TFET) is proposed and investigated by Silvaco Atlas simulation. This structure uses an additional metal on the drain region to modulate the energy band near the drain/channel ...
Duan X +6 more
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Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor. [PDF]
Nanoscale Res Lett, 2018 In this paper, a silicon-based T-shape gate dual-source tunnel field-effect transistor (TGTFET) is proposed and investigated by TCAD simulation. As a contrastive study, the structure, characteristic, and analog/RF performance of TGTFET, LTFET, and UTFET ...
Chen S +5 more
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High On-Current Ge-Channel Heterojunction Tunnel Field-Effect Transistor Using Direct Band-to-Band Tunneling. [PDF]
Micromachines (Basel), 2019 The main challenge for tunnel field-effect transistors (TFETs) is achieving high on-current (Ion) and low subthreshold swing (SS) with reasonable ambipolar characteristics.
Kim G, Lee J, Kim JH, Kim S.
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Investigation of gate-engineered heterostructure tunnel field effect transistor as a label-free biosensor: a compact study. [PDF]
Appl Phys A Mater Sci Process, 2023 In this article, the authors have articulated DC as well as transient response of a dielectric modulated gate-engineered heterostructure tunnel field effect transistor (GE-HTFET)-based biosensor for label-free detection.
Ghosh R, Karmakar A, Saha P.
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A novel high-low-high Schottky barrier based bidirectional tunnel field effect transistor. [PDF]
Heliyon, 2023 In this work, we proposed a novel High-Low-High Schottky barrier bidirectional tunnel field effect transistor (HLHSB-BTFET). Compared with previous technology which is named as High Schottky barrier BTFET (HSB-BTFET), the proposed HLHSB-BTFET requires ...
Jin X, Zhang S, Li M, Liu X, Li M.
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A silicone nanocrystal tunnel field effect transistor [PDF]
Applied Physics Letters, 2014 : In this work, we demonstrate a silicon nanocrystal Field Effect Transistor (ncFET). Its operation is similar to that of a Tunnelling Field Effect Transistor (TFET) with two barriers in series. The tunnelling barriers are fabricated in very thin silicon
Dominique Drouin +5 more
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