Results 11 to 20 of about 125,060 (320)

A Comprehensive Review on Tunnel Field-Effect Transistor (TFET) Based Biosensors: Recent Advances and Future Prospects on Device Structure and Sensitivity [PDF]

open access: yesSilicon, 2020
In this fast-growing technological world biosensors become more substantial in human life and the extensive use of biosensors creates enormous research interest among researchers to define different approaches to detect biomolecules.
Reddy N, Panda D.
europepmc   +2 more sources

A Study on Dual-Gate Dielectric Face Tunnel Field-Effect Transistor for Ternary Inverter. [PDF]

open access: yesNanomaterials (Basel)
In this article, we propose a dual-gate dielectric face tunnel field-effect transistor (DGDFTFET) that can exhibit three different output voltage states.
Wang A, Lu H, Zhang Y, Sun J, Lv Z.
europepmc   +2 more sources

A highly sensitive vertical plug-in source drain high Schottky barrier bilateral gate controlled bidirectional tunnel field effect transistor. [PDF]

open access: yesPLoS One, 2023
In this article, we propose a highly sensitive vertically plug-in source drain contacts high Schottky barrier based bilateral gate and assistant gate controlled bidirectional tunnel field Effect transistor (VPISDC-HSB-BTFET).
Liu X, Li M, Wu M, Zhang S, Jin X.
europepmc   +2 more sources

In-Line Tunnel Field Effect Transistor: Drive Current Improvement

open access: yesIEEE Journal of the Electron Devices Society, 2018
A new architecture of tunnel field effect transistor (TFET) with in-line (vertical) tunneling area is introduced. By adding the vertical tunneling area, the in-line TFET architecture outperformed the normal TFET in terms of the drive current, the ...
Woojin Park   +3 more
doaj   +2 more sources

A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor. [PDF]

open access: yesNanoscale Res Lett, 2021
A bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS integrated ...
Jin X   +5 more
europepmc   +2 more sources

Design Optimization of Double-Gate Isosceles Trapezoid Tunnel Field-Effect Transistor (DGIT-TFET). [PDF]

open access: yesMicromachines (Basel), 2019
Recently, tunnel field-effect transistors (TFETs) have been regarded as next-generation ultra-low-power semi-conductor devices. To commercialize the TFETs, however, it is necessary to improve an on-state current caused by tunnel-junction resistance and ...
Gu HY, Kim S.
europepmc   +2 more sources

Nanosheet integration of induced tunnel field-effect transistor with lower cost and lower power. [PDF]

open access: yesDiscov Nano
Nanosheet transistors are poised to become the preferred choice for the next generation of smaller-sized devices in the future. To address the future demand for high-performance and low-power computing applications, this study proposes a nanosheet ...
Lin JT, Kuo CY.
europepmc   +2 more sources

Performance Optimization of an Electrostatically Doped Staggered Type Heterojunction Tunnel Field Effect Transistor with High Switching Speed and Improved Tunneling Rate [PDF]

open access: yesJournal of Optoelectronical Nanostructures, 2022
In this paper, we demonstrate an electrostatically dopedjunctionless tunnel field effect transistor which iscomposed of a staggered band alignment at theheterojunction.
Mahdi Mohammadkhani Ghiasvand   +2 more
doaj   +1 more source

Graphene antidot nanoribbon tunnel field‐effect transistor

open access: yesMicro & Nano Letters, 2022
A graphene nanoribbon tunnel field‐effect transistor (TFET) model is proposed, in which the antidot pattern is used to generate the heterojunction (HJ) band structure.
Zhixing Xiao
doaj   +1 more source

Low-Power Vertical Tunnel Field-Effect Transistor Ternary Inverter

open access: yesIEEE Journal of the Electron Devices Society, 2021
In this study, vertical tunnel FET-based ternary CMOS (T-CMOS) is introduced and its electrical characteristics are investigated using TCAD device and mixed-mode simulations with experimentally calibrated tunneling parameters.
Hyun Woo Kim, Daewoong Kwon
doaj   +1 more source

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