A Comprehensive Review on Tunnel Field-Effect Transistor (TFET) Based Biosensors: Recent Advances and Future Prospects on Device Structure and Sensitivity [PDF]
In this fast-growing technological world biosensors become more substantial in human life and the extensive use of biosensors creates enormous research interest among researchers to define different approaches to detect biomolecules.
Reddy N, Panda D.
europepmc +2 more sources
A Study on Dual-Gate Dielectric Face Tunnel Field-Effect Transistor for Ternary Inverter. [PDF]
In this article, we propose a dual-gate dielectric face tunnel field-effect transistor (DGDFTFET) that can exhibit three different output voltage states.
Wang A, Lu H, Zhang Y, Sun J, Lv Z.
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A highly sensitive vertical plug-in source drain high Schottky barrier bilateral gate controlled bidirectional tunnel field effect transistor. [PDF]
In this article, we propose a highly sensitive vertically plug-in source drain contacts high Schottky barrier based bilateral gate and assistant gate controlled bidirectional tunnel field Effect transistor (VPISDC-HSB-BTFET).
Liu X, Li M, Wu M, Zhang S, Jin X.
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In-Line Tunnel Field Effect Transistor: Drive Current Improvement
A new architecture of tunnel field effect transistor (TFET) with in-line (vertical) tunneling area is introduced. By adding the vertical tunneling area, the in-line TFET architecture outperformed the normal TFET in terms of the drive current, the ...
Woojin Park +3 more
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A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor. [PDF]
A bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS integrated ...
Jin X +5 more
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Design Optimization of Double-Gate Isosceles Trapezoid Tunnel Field-Effect Transistor (DGIT-TFET). [PDF]
Recently, tunnel field-effect transistors (TFETs) have been regarded as next-generation ultra-low-power semi-conductor devices. To commercialize the TFETs, however, it is necessary to improve an on-state current caused by tunnel-junction resistance and ...
Gu HY, Kim S.
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Nanosheet integration of induced tunnel field-effect transistor with lower cost and lower power. [PDF]
Nanosheet transistors are poised to become the preferred choice for the next generation of smaller-sized devices in the future. To address the future demand for high-performance and low-power computing applications, this study proposes a nanosheet ...
Lin JT, Kuo CY.
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Performance Optimization of an Electrostatically Doped Staggered Type Heterojunction Tunnel Field Effect Transistor with High Switching Speed and Improved Tunneling Rate [PDF]
In this paper, we demonstrate an electrostatically dopedjunctionless tunnel field effect transistor which iscomposed of a staggered band alignment at theheterojunction.
Mahdi Mohammadkhani Ghiasvand +2 more
doaj +1 more source
Graphene antidot nanoribbon tunnel field‐effect transistor
A graphene nanoribbon tunnel field‐effect transistor (TFET) model is proposed, in which the antidot pattern is used to generate the heterojunction (HJ) band structure.
Zhixing Xiao
doaj +1 more source
Low-Power Vertical Tunnel Field-Effect Transistor Ternary Inverter
In this study, vertical tunnel FET-based ternary CMOS (T-CMOS) is introduced and its electrical characteristics are investigated using TCAD device and mixed-mode simulations with experimentally calibrated tunneling parameters.
Hyun Woo Kim, Daewoong Kwon
doaj +1 more source

