Results 21 to 30 of about 125,060 (320)
Two Dimensional Modeling of III-V Heterojunction Gate All Around Tunnel Field Effect Transistor [PDF]
Журнал нано- та електронної фізики, 2017 Tunnel Field Effect Transistor is one of the extensively researched semiconductor devices, which has captured attention over the conventional Metal Oxide Semiconductor Field Effect Transistor.
Manjula Vijh +2 more
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Analysis on Tunnel Field-Effect Transistor with Asymmetric Spacer
Applied Sciences, 2020 Tunnel field-effect transistor (Tunnel FET) with asymmetric spacer is proposed to obtain high on-current and reduced inverter delay simultaneously.
Hyun Woo Kim, Daewoong Kwon
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IET Circuits, Devices and Systems, 2021 Investigation and analysis of a ferroelectric material–based dopingless nanotube tunnel field‐effect transistor are conducted using a lead zirconate titanate (PZT) gate stack to induce negative capacitance in the device.
Apoorva +3 more
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Optimization of Tunnel Field-Effect Transistor-Based ESD Protection Network
Crystals, 2021 The tunnel field-effect transistor (TFET) is a potential candidate for replacing the reverse diode and providing a secondary path in a whole-chip electrostatic discharge (ESD) protection network.
Zhihua Zhu +5 more
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IET Circuits, Devices and Systems, 2021 This article presents an investigation report of the effects of temperature variation in the range of 300 to 480 K on electrical performance parameters of conventional dual‐material double‐gate tunnel field effect transistor (DMDG‐TFET) and dual‐material
Satyendra Kumar
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Tunnel Field-Effect Transistor With Segmented Channel
IEEE Journal of the Electron Devices Society, 2019 A tunnel field-effect transistor with segmented channels (Seg-TFET) on a corrugated substrate is proposed. The Seg-TFET takes advantage of using three stripes and the selective contact configuration to define the direction of current, and thereby its ...
Jaesoo Park, Changhwan Shin
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Complementary Black Phosphorus Tunneling Field-Effect Transistors [PDF]
ACS Nano, 2018 Band-to-band tunneling field-effect transistors (TFETs) have emerged as promising candidates for low-power integration circuits beyond conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) and have been demonstrated to overcome the thermionic limit, which results intrinsically in sub-threshold swings of at least 60 mV/dec at room ...
Peng Wu +8 more
openaire +2 more sources
Nanoscale tunnel field effect transistor based on a complex oxide lateral heterostructure [PDF]
, 2019 We demonstrate a tunnel field effect transistor based on a lateral heterostructure patterned from an $\mathrm{LaAlO_3/SrTiO_3}$ electron gas. Charge is injected by tunneling from the $\mathrm{LaAlO_3}$/$\mathrm{SrTiO_3}$ contacts and the current through ...
Flatté, M.E. +5 more
core +2 more sources
Guest Editorial: Materials & Devices for Advanced Flexible Sensors
IEEE Open Journal of Nanotechnology, 2023 The papers in this special section focus on materials and devices for flexible sensors. Presents recent advances in skin electronics, touch sensors for flexible display, near-infrared spectroscopy (NIRS) and organic electrochemical transistors (OECT ...
Yu Xinge
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Electrostatically-Doped Hetero-Barrier Tunnel Field Effect Transistor: Design and Investigation
IEEE Access, 2018 In this paper, an electrostatically-doped hetero-barrier tunnel-field-effect-transistor (EDHet-TFET) based on stepped broken-gap (type-III) is simulated, investigated, and compared with the conventionally-doped stepped broken-gap hetero-barrier TFET (Het-
M. Ehteshamuddin +2 more
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