Results 31 to 40 of about 125,060 (320)

Tunnel field-effect transistor with two gated intrinsic regions

AIP Advances, 2014
In this paper, we propose and validate (using simulations) a novel design of silicon tunnel field-effect transistor (TFET), based on a reverse-biased p+-p-n-n+ structure. 2D device simulation results show that our devices have significant improvements of
Y. Zhang, M. Tabib-Azar
doaj   +1 more source

Quantization, gate dielectric and channel length effect in double-gate tunnel field-effect transistor

Results in Physics, 2022
In this work, we investigate the effects of changing device parameters such as channel length and gate dielectric of n-type double gate (DG) silicon tunneling field effect transistor (TFET).
Kalyan Mondol, Mehedi Hasan, Abdul Hasib Siddique, Sharnali Islam   +3 more
doaj   +1 more source

Exploiting Within-Channel Tunneling in a Nanoscale Tunnel Field-Effect Transistor

IEEE Open Journal of Nanotechnology, 2020
In this paper, using device simulations, we investigate electrical characteristics of a tunnel field-effect transistor (TFET) in which band-to-band tunneling (BTBT) occurs dominantly within the channel, rather than at source-channel junction.
Shelly Garg, Sneh Saurabh
doaj   +1 more source

Performance Assessment of a Junctionless Heterostructure Tunnel FET Biosensor Using Dual Material Gate

Micromachines, 2023
Biosensors based on tunnel FET for label-free detection in which a nanogap is introduced under gate electrode to electrically sense the characteristics of biomolecules, have been studied widely in recent years.
Haiwu Xie, Hongxia Liu
doaj   +1 more source

Tunnel field-effect transistors for sensitive terahertz detection [PDF]

Nature Communications, 2021
AbstractThe rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires ...
I. Gayduchenko, S. G. Xu, G. Alymov, M. Moskotin, I. Tretyakov, T. Taniguchi, K. Watanabe, G. Goltsman, A. K. Geim, G. Fedorov, D. Svintsov, D. A. Bandurin   +11 more
openaire   +5 more sources

Organic tunnel field-effect transistors

, 2023
Abstract The much sought after intrinsically flexible organic transistors are poised to become a central ingredient in the development of wearable technologies and bioelectronics1-3. A paramount requisite for these applications lies in achieving high signal amplification at low power.
Xiaohong Zhang, Wei Deng, Zhengjun Lu, Yujian Zhang, Xiujuan Zhang, Fengquan Qiu, Yongji Wang, Haoyu Jiang, Xiaobin Ren, Yiming Wu, Xian-Kai Chen, Jiansheng Jie   +11 more
openaire   +1 more source

Generation of STDP With Non-Volatile Tunnel-FET Memory for Large-Scale and Low-Power Spiking Neural Networks

IEEE Journal of the Electron Devices Society, 2020
Spiking neural networks (SNNs) have attracted considerable attention as next-generation neural networks. As SNNs consist of devices that have spike-timing-dependent plasticity (STDP) characteristics, STDP is one of the critical characteristics we need to
Hisashi Kino, Takafumi Fukushima, Tetsu Tanaka   +2 more
doaj   +1 more source

Comment On >Assessment Of Field-Induced Quantum Confinement In Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor> Appl. Phys. Lett. 105, 082108 (2014) [PDF]

, 2015
Not AvailableNRI SWAN programNSF NASCENT ERCMicroelectronics Research CenterElectrical and Computer ...
Banerjee, Sanjay K., Hsu, William, Mantey, Jason, Register, Leonard F.   +3 more
core   +1 more source

The vertical metal insulator semiconductor tunnel transistor: A proposed Fowler-Nordheim tunneling device

, 2005
We propose a new field-effect transistor, the vertical metal insulator semiconductor tunnel transistor (VMISTT) which operates using gate modulation of the Fowler-Nordheim tunneling current through a metal insulator semiconductor (M-I-S) diode.
Chong, Lit Ho, de Groot, C. H., Mallik, Kanad   +2 more
core   +1 more source

Doping-Less Tunnel Field Effect Transistor: Design and Investigation [PDF]

IEEE Transactions on Electron Devices, 2013
Using calibrated simulations, we report a detailed study of the doping-less tunnel field effect transistor (TFET) on a thin intrinsic silicon film using charge plasma concept. Without the need for any doping, the source and drain regions are formed using
M. Jagadesh Kumar, S. Janardhanan
semanticscholar   +1 more source