Results 41 to 50 of about 125,060 (320)
Journal of Engineering Technology and Applied Physics, 2023 To meet the performance requirements of low power mobile devices, a device with a high ION/IOFF ratio at low-VDD is needed. TFETs are gaining popularity due to their low subthreshold slope and high transconductance compared to MOSFETs.
Tan Chun Fui, Ajay Kumar Singh
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III-V Tunnel Field-Effect Transistors [PDF]
ECS Meeting Abstracts, 2011 Abstract not Available.
Alan Seabaugh +12 more
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Nanomaterials, 2019 The practical use of tunnel field-effect transistors is retarded by the low on-state current. In this paper, the energy-band engineering of InAs/Si heterojunction and novel device structure of source-pocket concept are combined in a single tunnel field ...
Hongliang Lu +4 more
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Vertical Field-Effect Transistor Based on Wavefunction Extension
, 2011 We demonstrate a mechanism for a dual layer, vertical field-effect transistor, in which nearly-depleting one layer will extend its wavefunction to overlap the other layer and increase tunnel current.
A. C. Gossard +8 more
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Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET
IEEE Journal of the Electron Devices Society, 2016 A bilayer graphene-based electrostatically doped tunnel field-effect transistor (BED-TFET) is proposed. Unlike graphene nanoribbon TFETs in which the edge states deteriorate the OFF-state performance, BED-TFETs operate based on bandgaps induced by ...
Fan W. Chen +4 more
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IEEE Journal of the Electron Devices Society, 2015 A single grain boundary dopingless PNPN tunnel field effect transistor (TFET) on recrystallized polycrystalline silicon is studied by varying the position of the grain boundary in the channel.
Mamidala Saketh Ram, Dawit Burusie Abdi
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A simple and controlled single electron transistor based on doping modulation in silicon nanowires
, 2006 A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect transistor made on silicon-on-insulator thin films.
Deleonibus, S. +5 more
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Planar graphene tunnel field-effect transistor [PDF]
Applied Physics Letters, 2014 We propose a concept for a graphene tunnel field-effect transistor. The main idea is based on the use of two graphene electrodes with zigzag termination divided by a narrow gap under the influence of the common gate. Our analysis shows that such device will have a pronounced switching effect at low gate voltage and high on/off current ratio at room ...
Katkov, V. L., Osipov, V. A.
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Advanced Functional Materials, EarlyView.Novel ferrocene derivatives (e.g., FcPhc2) are used as an ultrathin layer hole‐blocking layer, reducing hole injection from the Ag contact. This results in an ultralow noise spectral density of 1.2 × 10−14 A Hz−1/2, and a high specific detectivity of 8.1 × 1012 Jones at −0.5 V.
Eunyoung Hong +16 more
wiley +1 more source
Method and apparatus for measurement of trap density and energy distribution in dielectric films [PDF]
, 1976 Trap densities in dielectric films are determined by tunnel injection measurements when the film is incorporated in an insulated-gate field effect transistor.
Maserjian, J.
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