Results 51 to 60 of about 125,060 (320)

Impact of Strain on Drain Current and Threshold Voltage of Nanoscale Double Gate Tunnel Field Effect Transistor: Theoretical Investigation and Analysis

, 2010
Tunnel field effect transistor (TFET) devices are attractive as they show good scalability and have very low leakage current. However they suffer from low on-current and high threshold voltage.
Aydin, Bhuwalka, Bhuwalka, Bhuwalka, Boucart, Choi, Dhar, Dobrovolsky, Hansch, Hurkx, Lim, M. Jagadesh Kumar, Nagavarapu, Nirschl, Numata, Reddick, Sedlmaier, Shen, Sneh Saurabh, Takagi, Tehrani, Uemura, Wang, Wang, Zhang, Zhang   +25 more
core   +1 more source

Readout methods and devices for Josephson-junction-based solid-state qubits [PDF]

, 2006
We discuss the current situation concerning measurement and readout of Josephson-junction based qubits. In particular we focus attention of dispersive low-dissipation techniques involving reflection of radiation from an oscillator circuit coupled to a ...
Johansson, G., Shumeiko, V. S., Tornberg, L., Wendin, G.   +3 more
core   +1 more source

Synchrotron Radiation for Quantum Technology

Advanced Functional Materials, EarlyView.
Materials and interfaces underpin quantum technologies, with synchrotron and FEL methods key to understanding and optimizing them. Advances span superconducting and semiconducting qubits, 2D materials, and topological systems, where strain, defects, and interfaces govern performance.
Oliver Rader, Sakura Pascarelli, Klaus Attenkofer, Anna A. Makarova, Karsten Holldack, Kai Rossnagel, Kristiaan Temst, George Kourousias, Stefano Carretta, Caterina Biscari, Helmut Dosch   +10 more
wiley   +1 more source

Controlling Josephson transport by manipulation of Andreev levels in ballistic mesoscopic junctions

, 1998
We discuss how to control dc Josephson current by influencing the structure and nonequilibrium population of Andreev levels via external electrostatic gates, external current injection and electromagnetic radiation.
Ambegaokar, Argaman, Baselmans, Beenakker, Chang, Chrestin, Furusaki, Gorelik, Göran Wendin, Hu, Ilhan, Morpurgo, Peter Samuelsson, Riedel, Samuelsson, Schäpers, Shumeiko, Shumeiko, Takayanagi, van Houten, van Wees, Vitaly S. Shumeiko, Volkov, Volkov, Wendin, Wendin, Wendin, Wendin, Wilhelm   +28 more
core   +2 more sources

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

FS-iTFET: advancing tunnel FET technology with Schottky-inductive source and GAA design

Discover Nano
In this paper, we introduce a novel Forkshape nanosheet Inductive Tunnel Field-Effect Transistor (FS-iTFET) featuring a Gate-All-Around structure and a full-line tunneling heterojunction channel.
Jyi-Tsong Lin, Wei-Heng Tai
doaj   +1 more source

Small Signal Parameter Extraction of III-V Heterojunction Surrounding Gate Tunnel Field Effect Transistor [PDF]

Журнал нано- та електронної фізики, 2017
This work presents simulation study and analysis of nanoscale III-V Heterojunction Gate All Around Tunnel Field Effect Transistor, along with the extraction of small signal parameters of the device.
ManjulaВ Vijh, R.S.В Gupta, SujataВ Pandey   +2 more
doaj   +1 more source

Theory of a Magnetically-Controlled Quantum-Dot Spin Transistor

, 2007
We examine transport through a quantum dot coupled to three ferromagnetic leads in the regime of weak tunnel coupling. A finite source-drain voltage generates a nonequilibrium spin on the otherwise non-magnetic quantum dot.
D. Loss, Daniel Urban, G. E. W. Bauer, Jürgen König, M. H. Devoret, Matthias Braun, S. Maekawa   +6 more
core   +1 more source

Prospects of Electric Field Control in Perpendicular Magnetic Tunnel Junctions and Emerging 2D Spintronics for Ultralow Energy Memory and Logic Devices

Advanced Functional Materials, EarlyView.
Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp, Brahmdutta Dixit, Yifei Yang, Deyuan Lyu, Thomas Peterson, Qi Jia, Yu‐Chia Chen, Jian‐Ping Wang   +7 more
wiley   +1 more source

Metallic single-electron transistor without traditional tunnel barriers

, 2000
We report on a new type of single-electron transistor (SET) comprising two highly resistive Cr thin-film strips (~ 1um long) connecting a 1 um-long Al island to two Al outer electrodes.
A. B. Zorin, D. E. Presnov, J. Niemeyer, Lafarge P., M. N. Savvateev, V. A. Krupenin   +5 more
core   +1 more source