Results 141 to 150 of about 342 (172)
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Investigation of silicide-induced-dopant-activation for steep tunnel junction in tunnel field effect transistor (TFET)

Solid-State Electronics, 2018
Abstract Numerous researches for making steep tunnel junction within tunnel field-effect transistor (TFET) have been conducted. One of the ways to make an abrupt junction is source/drain silicidation, which uses the phenomenon often called silicide-induced-dopant-segregation.
Sihyun Kim   +6 more
openaire   +1 more source

Exhaustive experimental study of tunnel field effect transistors (TFETs): From materials to architecture

2009 10th International Conference on Ultimate Integration of Silicon, 2009
The goal of this paper is to present and to analyze the Tunnel FET and its specific properties (small subthreshold swing, very low OFF currents). We investigate the opportunities offered by this sub-“kT/q” swing device and review the issues that TFET has to overcome (ambipolar behaviour, low ON current) for future circuit applications. For that purpose
C. Le Royer, F. Mayer
openaire   +1 more source

Tunnel Field‐Effect Transistors (TFET)

2016
Jagadesh Kumar Mamidala   +2 more
openaire   +1 more source

Investigation of Tunnel Field-Effect Transistors (TFETs) for Label-Free Biosensing

2022
Suneet Kumar Agnihotri   +3 more
openaire   +1 more source

Tunnel Field Effect Transistor (TFET): A Review

International Journal of Materials Technology and Innovation
Fatma Omar, Tarek Abdolkader
openaire   +1 more source

Drain current model for a hetero‐dielectric single gate tunnel field effect transistor (HDSG TFET)

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2022
Tan Chun Fui
exaly  

Investigation of DC performance of Ge-source pocket silicon-on-insulator tunnel field effect transistor in nano regime

International Journal of Nanoparticles, 2021
Sweta Chander, Sanjeet Kumar Sinha
exaly  

Nonvolatile Memory (NVM) Operation of Tunnel Field-Effect Transistor (TFET) Using Ferroelectric HfO2 Sidewall

Journal of Nanoscience and Nanotechnology, 2019
Dae Woong, Byung Park, Sangwan Kim
exaly  

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