Two-Dimensional Materials, the Ultimate Solution for Future Electronics and Very-Large-Scale Integrated Circuits. [PDF]
Qin L, Wang L.
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Improving the Performance of Arsenene Nanoribbon Gate-All-Around Tunnel Field-Effect Transistors Using H Defects. [PDF]
Song S +5 more
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Security Challenges Toward In-Sensor Computing Systems. [PDF]
Kajol M, Chennagouni N, Lu W, Yu Q.
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WS2 Nanosheet-Based Ultrascaled Field-Effect Transistor for Hydrogen Gas Sensing: Addressing the Sensitivity-Downscaling Trade-Off. [PDF]
Tamersit K.
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Editorial for the Special Issue on MEMS/NEMS Devices and Applications, 3rd Edition. [PDF]
Dai ZX, Ono T, Dai CL.
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Multifunctional Reconfigurable Operations in an Ultra-Scaled Ferroelectric Negative Transconductance Transistor. [PDF]
Zhu Z, Persson AEO, Wernersson LE.
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Electrostatically Doped Junctionless Graphene Nanoribbon Tunnel Field-Effect Transistor for High-Performance Gas Sensing Applications: Leveraging Doping Gates for Multi-Gas Detection. [PDF]
Tamersit K +3 more
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Performance Projection of Vacuum Gate Dielectric Doping-Free Carbon Nanoribbon/Nanotube Field-Effect Transistors for Radiation-Immune Nanoelectronics. [PDF]
Tamersit K +3 more
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TCAD simulation study of heavy ion radiation effects on hetero junctionless tunnel field effect transistor. [PDF]
Aishwarya K, Lakshmi B.
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A hot-emitter transistor based on stimulated emission of heated carriers. [PDF]
Liu C +18 more
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