Results 161 to 170 of about 725 (202)

Characterization of Charge Plasma-based Junctionless Tunneling Field Effect Transistor (JL-TFET)

2020 IEEE International Symposium on Smart Electronic Systems (iSES) (Formerly iNiS), 2020
The steep doping profile associated with conventional Tunneling Field Effect Transistor (TFET) provides significant hindrances from a fabrication perspective despite the obvious merits of the device. Junctionless TFET (JL-TFET) alleviates the problem considerably by introducing a uniform doping profile across the device.
Nafis Mustakim, Sazzad Hussain, Jibesh K. Saha   +2 more
openaire   +1 more source

Scaling properties of the tunneling field effect transistor (TFET): Device and circuit

Solid-State Electronics, 2006
Abstract The scaling properties of the tunneling field effect transistor (TFET) are shown using standard 130 nm, 90 nm, and 65 nm CMOS process flows. For the different technology nodes the temperature dependence is presented. The device characteristic does not show degradation after a combined voltage and temperature cycle.
Th. Nirschl, St. Henzler, J. Fischer, M. Fulde, A. Bargagli-Stoffi, M. Sterkel, J. Sedlmeir, C. Weber, R. Heinrich, U. Schaper, J. Einfeld, R. Neubert, U. Feldmann, K. Stahrenberg, E. Ruderer, G. Georgakos, A. Huber, R. Kakoschke, W. Hansch, D. Schmitt-Landsiedel   +19 more
openaire   +1 more source

Work-Function Variation Effects of Tunneling Field-Effect Transistors (TFETs)

IEEE Electron Device Letters, 2013
The work-function variation (WFV) effects of tunneling field-effect transistors (TFETs) are discussed for the first time. According to the 3-D device simulation results, TFETs are less immune to the WFV than metal-oxide-semiconductor FETs (MOSFETs) in terms of subthreshold swing (S) and threshold voltage (Vth).
Kyoung Min Choi, Woo Young Choi
openaire   +1 more source

The impact of scaled channel length in tunneling field effect transistors (TFETs)

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014), 2014
In this paper, we investigate the channel length (L CH ) of the silicon-on-insulator (SOI) n-type tunneling field effect transistor (NTFET) with the respect of device performance. 2D-device simulation was used for simulating the devices with 30 nm gate length of SOI NTFET with 10 nm thin buried oxide (t BOX ) and 7 nm thin silicon body (t si ).
Nurul Huda Abdul Rahman, M. K. Md Arshad, Noraini Othman, M.F.M. Fathil, M.S. Nur Humaira, U. Hashim   +5 more
openaire   +1 more source

The tunnelling field effect transistors (TFET): the temperature dependence, the simulation model, and its application

2004 IEEE International Symposium on Circuits and Systems (ISCAS), 2004
The TFET is an alternative device for deep sub-micron CMOS with very good short channel and leakage characteristics. The paper presents investigations on properties important for circuit implementation: measurements are performed to verify the working principle and the temperature dependence of the TFET.
Thomas Nirschl, Peng-Fei Wang, Walter Hansch, Doris Schmitt-Landsiedel   +3 more
openaire   +1 more source

The 1T photo pixel cell using the tunneling field effect transistor (TFET)

Digest of Technical Papers. 2005 Symposium on VLSI Circuits, 2005., 2005
The tunneling field effect transistor (TFET) is a quantum-mechanical device which is able to extend the epoch of the standard CMOS process by offering reduced short channel effects and smaller leakage currents. First, the mode of operation of the TFET is presented. Next, the application as photo pixel cell is proposed comprising only one device.
T. Nirschl, A. Bargagli-Stoffi, J. Fischer, S. Henzler, null Peng-Fei Wang, M. Sterkel, W. Hansch, D. Schmitt-Landsiedel   +7 more
openaire   +1 more source

Temperature Influence on Tunnel Field Effect Transistors (TFETs) with Low Ambipolar Currents

ECS Transactions, 2011
This work presents a study of the temperature impact on tunnel field effect transistors performance. After design considerations regarding undesirable ambipolar currents, TFETs were simulated for temperatures ranging from 100 to 400 K. Bearing this objective in mind, the influence of each one of the most relevant transport mechanisms was analyzed and ...
Marcio D. Martino, Paula G. Der Agopian, Sebastião G. Dos Santos Filho, João A. Martino   +3 more
openaire   +1 more source

Performance analysis of different Tunnel Field Effect Transistors (TFET) device structures with their Challenges

2021 8th International Conference on Signal Processing and Integrated Networks (SPIN), 2021
Tunnel Field Effect Transistor (TFET) is emerging as a suitable device to operate at a very low power. TFET overcomes the challenges faced by MOSFET based on its different switching mechanisms of band to band tunneling (BTBT) which makes it unique in terms of very low power consumption. TFET facilities steeper slope(
Shilpi Gupta, Subodh Wariya
openaire   +1 more source

Design of Gate Engineered Heterojunction Surrounding Gate Tunnel Field Effect Transistor (HSG TFET)

2020 International Conference on Emerging Trends in Information Technology and Engineering (ic-ETITE), 2020
This paper presents, the design architecture of the Heterojunction Surrounding Gate (HSG) Tunnel Field Effect Transistor (TFET) employing Single Material (SM) gate and Dual Material (DM) gate with two different work function is proposed. A concise comparison between DM HSG TFET, SM HSG TFET and conventional Silicon Surrounding Gate (SG) TFET is ...
M Keerthana, P Vimala
exaly   +2 more sources

Impact of gate dielectric constant variation on tunnel field-effect transistors (TFETs)

Solid-State Electronics, 2016
Abstract The influence of gate dielectric constant variation on tunnel field-effect transistors (TFETs) has been investigated. High- κ materials in polycrystalline nature induce localized gate dielectric constant variation. According to the simulation results, TFETs show larger standard deviation of threshold voltage ( V th ), subthreshold swing ...
Seung Kyu Kim, Woo Young Choi
openaire   +1 more source