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Two-Dimensional Potential-Based Model for Tunnel Field-Effect Transistor (TFET)
2020In this paper, we propose a two-dimensional analytical model of silicon-on-insulator tunneling field-effect transistors (SOI TFETs) by applying the superposition principle. By solving 2D Poisson’s equation with the help of boundary conditions of channel region and gate oxide region, we calculated the surface potential and electric field for both ...
Netravathi Kulkarni, P. Vimala
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Solid-State Electronics, 2018
Abstract Numerous researches for making steep tunnel junction within tunnel field-effect transistor (TFET) have been conducted. One of the ways to make an abrupt junction is source/drain silicidation, which uses the phenomenon often called silicide-induced-dopant-segregation.
Sihyun Kim +6 more
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Abstract Numerous researches for making steep tunnel junction within tunnel field-effect transistor (TFET) have been conducted. One of the ways to make an abrupt junction is source/drain silicidation, which uses the phenomenon often called silicide-induced-dopant-segregation.
Sihyun Kim +6 more
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2014
In this work, an analytical model for a dielectric modulated (DM) double gate (DG) Tunnel Field Effect Transistor (TFET) working as a biosensor for label free electrical detection of biomolecules has been proposed. It has been analyzed that the ambipolar behaviour of tunnel field effect transistor can also be used for sensing of the biomolecules when ...
Ajay Singh +3 more
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In this work, an analytical model for a dielectric modulated (DM) double gate (DG) Tunnel Field Effect Transistor (TFET) working as a biosensor for label free electrical detection of biomolecules has been proposed. It has been analyzed that the ambipolar behaviour of tunnel field effect transistor can also be used for sensing of the biomolecules when ...
Ajay Singh +3 more
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2009 10th International Conference on Ultimate Integration of Silicon, 2009
The goal of this paper is to present and to analyze the Tunnel FET and its specific properties (small subthreshold swing, very low OFF currents). We investigate the opportunities offered by this sub-“kT/q” swing device and review the issues that TFET has to overcome (ambipolar behaviour, low ON current) for future circuit applications. For that purpose
C. Le Royer, F. Mayer
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The goal of this paper is to present and to analyze the Tunnel FET and its specific properties (small subthreshold swing, very low OFF currents). We investigate the opportunities offered by this sub-“kT/q” swing device and review the issues that TFET has to overcome (ambipolar behaviour, low ON current) for future circuit applications. For that purpose
C. Le Royer, F. Mayer
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Analysis of Cylindrical Gate Junctionless Tunnel Field Effect Transistor (CG-JL-TFET)
2015 Annual IEEE India Conference (INDICON), 2015In this paper, a Cylindrical Gate Junctionless Tunnel Field Effect Transistor (CG-JL-TFET) has been investigated. This work is based on the simulation study done using Sentaurus. The electrical characteristics such as surface potential, energy band, electric field and drain current of the CG-JL-TFET) has been studied. The impact of different gate oxide
null Ajay +3 more
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A Comparative Study of Material Impact on Tunnel Field-Effect Transistor (TFET) Performance
2024 International Conference on Emerging Trends in Networks and Computer Communications (ETNCC)Pradipta Dutta
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Low voltage tunnel field-effect transistor (TFET) and method of making same
2017A low voltage tunnel field effect transistor includes a p-n tunnel junction, a gate-dielectric, a gate, a source-contact, and a drain-contact. The p-n tunnel junction includes a depletion region interfacing together a source-layer and a drain-layer. The depletion region includes a source-tunneling-region of the source-layer and a drain-tunneling-region
Seabaugh, Alan C. +6 more
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An analytical modeling approach for a gate all around (GAA) tunnel field effect transistor (TFET)
SPIE Proceedings, 2012An analytical model for a gate all around (GAA) Tunnel Field Effect Transistor (TFET) having circular and square cross section geometry has been proposed in this work describing the important device electrostatic parameters i.e. Surface Potential, Electric Field and Energy Band profile.
Rakhi Narang +3 more
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Investigation of Tunnel Field-Effect Transistors (TFETs) for Label-Free Biosensing
2022Suneet Kumar Agnihotri +3 more
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