A resilient type-III broken gap Ga2O3/SiC van der Waals heterogeneous bilayer with band-to-band tunneling effect and tunable electronic property. [PDF]
Sci RepFerdous N, Islam MS, Park J.
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2D Materials Powering Neuromorphic Intelligence. [PDF]
Nanomicro LettKazmi J +9 more
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Symmetric tunnel field-effect transistor (S-TFET)
Current Applied Physics, 2015Abstract A novel heterojunction symmetric tunnel field-effect transistor (S-TFET) has been proposed and investigated, for the first time, in order to address the inborn technical challenges of the conventional p-i-n TFET ( i.e., asymmetric TFET). With a band-to-band tunneling process between the germanium source/drain region and the silicon channel ...
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Simulation Studies of Tunnel Field Effect Transistor (TFET)
2012 International Conference on Advances in Computing and Communications, 2012TFET is proposed as an alternative to Metal Oxide Semiconductor Field Effect Transistor. In these devices, tunneling currents are no longer considered as unwanted parasitics. In this work, the device architecture and performance of both n-type and p-type TFETs with a channel length of 30nm are studied.
Rama Komaragiri
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Characteristic Analysis of Silicon Nanowire Tunnel Field Effect Transistor (NW-TFET)
2020 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT), 2020This paper describes the design structure of the nanowire tunnel field effect transistor (NW-TFET). The device simulation carried on nanohub device simulation tool. The parameters such as energy gap and drain current are analyzed for different values of drain voltage, channel length and channel thickness furthermore the drain current analysis are done ...
P Vimala
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Drain current model for a hetero‐dielectric single gate tunnel field effect transistor (HDSG TFET)
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2022 Tunnel field effect transistor (TFET) is a potential candidate to replace CMOS in deep-submicron region due to its lower SS (subthreshold swing,
Tan Chun Fui
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Tunnel field effect transistor (TFET) with lateral oxidation [PDF]
, 2016 A vertical-mode tunnel field-effect transistor (TFET) is provided with an oxide region that may be laterally positioned relative to a source region.
LEE JACK C, ZHAO HAN
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Switching Characteristic Analysis of Tunnel Field-Effect Transistor (TFET) Inverters
Journal of Nanoscience and Nanotechnology, 2017Dae Woong, Byung Park, Jang Hyun Kim
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Ambipolarity Factor of Tunneling Field-Effect Transistors (TFETs)
JSTS:Journal of Semiconductor Technology and Science, 2011The ambipolar behavior of tunneling field- effect transistors (TFETs) has been investigated quantitatively by introducing a novel parameter: ambipolarity factor (ν). It has been found that the malfunction of TFET can result from the ambipolar state which is not on- or off- state.
Jung-Shik Jang, Woo-Young Choi
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Impact of mask alignment on the tunneling field effect transistor (TFET)
Proceedings of the 2005 International Conference on Microelectronic Test Structures, 2005. ICMTS 2005., 2005The tunneling field effect transistor (TFET) is a standard CMOS process flow compatible device which shows improved short channel characteristics and lower static power consumption. The device is generated by the p-implant layer overlapping the source extension.
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