Results 151 to 160 of about 725 (202)

Silicon-Based Biosensors: A Critical Review of Silicon's Role in Enhancing Biosensing Performance. [PDF]

Biosensors (Basel)
Muhammad W, Song J, Kim S, Ahmed F, Cho E, Lee H, Kim J.   +6 more
europepmc   +1 more source

Neuromorphic Floating-Gate Memory Based on 2D Materials. [PDF]

Cyborg Bionic Syst
Hu C, Liang L, Yu J, Cheng L, Zhang N, Wang Y, Wei Y, Fu Y, Wang ZL, Sun Q.   +9 more
europepmc   +1 more source

Al₂O₃/ZrO₂ dual-dielectric Gr/CNT nanoribbon vertical tunnel FET based biosensor for genomic classification and S-protein detection in SARS-CoV-2.

Heliyon
Venkatesh M, Parthasarathy P.
europepmc   +1 more source

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Symmetric tunnel field-effect transistor (S-TFET)

Current Applied Physics, 2015
Abstract A novel heterojunction symmetric tunnel field-effect transistor (S-TFET) has been proposed and investigated, for the first time, in order to address the inborn technical challenges of the conventional p-i-n TFET ( i.e., asymmetric TFET). With a band-to-band tunneling process between the germanium source/drain region and the silicon channel ...
Hyohyun Nam, Min Hee Cho, Changhwan Shin   +2 more
exaly   +2 more sources

Simulation Studies of Tunnel Field Effect Transistor (TFET)

2012 International Conference on Advances in Computing and Communications, 2012
TFET is proposed as an alternative to Metal Oxide Semiconductor Field Effect Transistor. In these devices, tunneling currents are no longer considered as unwanted parasitics. In this work, the device architecture and performance of both n-type and p-type TFETs with a channel length of 30nm are studied.
Aswathy M., Nitha M. Biju, Rama Komaragiri   +2 more
openaire   +1 more source

Ambipolarity Factor of Tunneling Field-Effect Transistors (TFETs)

JSTS:Journal of Semiconductor Technology and Science, 2011
The ambipolar behavior of tunneling field- effect transistors (TFETs) has been investigated quantitatively by introducing a novel parameter: ambipolarity factor (ν). It has been found that the malfunction of TFET can result from the ambipolar state which is not on- or off- state.
Jung-Shik Jang, Woo-Young Choi
openaire   +1 more source

Characteristic Analysis of Silicon Nanowire Tunnel Field Effect Transistor (NW-TFET)

2020 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT), 2020
This paper describes the design structure of the nanowire tunnel field effect transistor (NW-TFET). The device simulation carried on nanohub device simulation tool. The parameters such as energy gap and drain current are analyzed for different values of drain voltage, channel length and channel thickness furthermore the drain current analysis are done ...
P Vimala
exaly   +2 more sources

Analog/RF Performance Analysis of GAA-GNR Tunnel Field-Effect Transistor (TFET)

Lecture Notes in Electrical Engineering, 2022
Jayabrata Goswami, Nitai Paitya, Goswami Jayabrata   +2 more
exaly   +2 more sources

Impact of mask alignment on the tunneling field effect transistor (TFET)

Proceedings of the 2005 International Conference on Microelectronic Test Structures, 2005. ICMTS 2005., 2005
The tunneling field effect transistor (TFET) is a standard CMOS process flow compatible device which shows improved short channel characteristics and lower static power consumption. The device is generated by the p-implant layer overlapping the source extension.
T. Nirschl, U. Schaper, J. Einfeld, S. Henzler, M. Sterkel, J. Singer, M. Fulde, W. Hansch, G. Georgakos, D. Schmitt-Landsiedell   +9 more
openaire   +1 more source