Results 101 to 110 of about 15,872,035 (205)
The fast-developing information technology has imposed urgent need for effective solutions to overcome the increasing power density in further scaled electronic devices and systems. The tunnel field-effect transistor (TFET) built with two-dimensional (2D)
Qingqing Sun (280493) +19 more
core +1 more source
Silicon-Germanium Based Tunnel Field Effect Transistor for Low Power Computation [PDF]
In this thesis we mainly focus on silicon germanium based gate normal tunnel field effect transistor. We carried out TCAD modeling with special attention paid to band structure modification of the silicon germanium heterojunction.
Ma, Siguang
core
Performance Enhancement of the Tunnel Field Effect Transistor using SiGe Source
Due to extremely low off state current (IOFF) and excellent sub-threshold characteristics, the tunnel field effect transistor (TFET) has attracted a lot of attention for low standby power applications.
Patel, Nayan B +2 more
core
This paper explores advantages of tunnel field effect transistor (TFET) analog-to-digital converters (ADCs) on energy efficiency and temperature stability.
Yuan, Jiann Shiun, Lin, Jie
core +1 more source
Nano-biosensors with subthreshold swing tunnel field effect transistor: A cutting-edge review
A thorough investigation into the development and performance assessment of biosensors that utilize Tunnel Field Effect Transistors (TFETs), showcasing a departure from conventional bio-sensing approaches is carried out.
M. Poorna Sundari, G. Lakshmi Priya
doaj +1 more source
Steep-slope tunnel field-effect transistor based on the two-dimensional WSe2 and ReS2
Two-dimensional (2D) materials have drawn an immense attention in the research field and are well-known for their outstanding physical, mechanical and optical properties.
Koh, Hui Hui
core
Tunnel field-effect transistors (TFETs) are a potential alternative to MOSFETs for low-temperature electronics. We provide an in-depth experimental characterization of TFETs analyzing the fundamental physical behavior at different temperature regimes ...
Wernersson, Lars Erik, +4 more
core +2 more sources
In this study, a comparison of the negative capacitance vertical tunnel field-effect transistor (NC-VTFET) and VTFET for biosensing applications was conducted. Dielectrically modulated TFET demonstrates better sensitivity than the traditional metal oxide
Shailendra Singh (2307088) +3 more
core +1 more source
Dielectric and temperature-dependent optimization of an asymmetric gate-drain engineered core-shell dopingless nanotube tunnel FET for analog and RF performance. [PDF]
Kumar T R, Priya G L.
europepmc +1 more source

