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Symmetric tunnel field-effect transistor (S-TFET)
Current Applied Physics, 2015Abstract A novel heterojunction symmetric tunnel field-effect transistor (S-TFET) has been proposed and investigated, for the first time, in order to address the inborn technical challenges of the conventional p-i-n TFET ( i.e., asymmetric TFET). With a band-to-band tunneling process between the germanium source/drain region and the silicon channel ...
Hyohyun Nam +2 more
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Characteristic Analysis of Silicon Nanowire Tunnel Field Effect Transistor (NW-TFET)
2020 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT), 2020This paper describes the design structure of the nanowire tunnel field effect transistor (NW-TFET). The device simulation carried on nanohub device simulation tool. The parameters such as energy gap and drain current are analyzed for different values of drain voltage, channel length and channel thickness furthermore the drain current analysis are done ...
P Vimala
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Design of Gate Engineered Heterojunction Surrounding Gate Tunnel Field Effect Transistor (HSG TFET)
2020 International Conference on Emerging Trends in Information Technology and Engineering (ic-ETITE), 2020This paper presents, the design architecture of the Heterojunction Surrounding Gate (HSG) Tunnel Field Effect Transistor (TFET) employing Single Material (SM) gate and Dual Material (DM) gate with two different work function is proposed. A concise comparison between DM HSG TFET, SM HSG TFET and conventional Silicon Surrounding Gate (SG) TFET is ...
M Keerthana, P Vimala
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Analog/RF Performance Analysis of GAA-GNR Tunnel Field-Effect Transistor (TFET)
Lecture Notes in Electrical Engineering, 2022Jayabrata Goswami +2 more
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Simulation Studies of Tunnel Field Effect Transistor (TFET)
2012 International Conference on Advances in Computing and Communications, 2012TFET is proposed as an alternative to Metal Oxide Semiconductor Field Effect Transistor. In these devices, tunneling currents are no longer considered as unwanted parasitics. In this work, the device architecture and performance of both n-type and p-type TFETs with a channel length of 30nm are studied.
Aswathy M. +2 more
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Ambipolarity Factor of Tunneling Field-Effect Transistors (TFETs)
JSTS:Journal of Semiconductor Technology and Science, 2011The ambipolar behavior of tunneling field- effect transistors (TFETs) has been investigated quantitatively by introducing a novel parameter: ambipolarity factor (ν). It has been found that the malfunction of TFET can result from the ambipolar state which is not on- or off- state.
Jung-Shik Jang, Woo-Young Choi
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Impact of mask alignment on the tunneling field effect transistor (TFET)
Proceedings of the 2005 International Conference on Microelectronic Test Structures, 2005. ICMTS 2005., 2005The tunneling field effect transistor (TFET) is a standard CMOS process flow compatible device which shows improved short channel characteristics and lower static power consumption. The device is generated by the p-implant layer overlapping the source extension.
T. Nirschl +9 more
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Work-Function Variation Effects of Tunneling Field-Effect Transistors (TFETs)
IEEE Electron Device Letters, 2013The work-function variation (WFV) effects of tunneling field-effect transistors (TFETs) are discussed for the first time. According to the 3-D device simulation results, TFETs are less immune to the WFV than metal-oxide-semiconductor FETs (MOSFETs) in terms of subthreshold swing (S) and threshold voltage (Vth).
Kyoung Min Choi, Woo Young Choi
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