Results 141 to 150 of about 337 (171)
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Investigation of silicide-induced-dopant-activation for steep tunnel junction in tunnel field effect transistor (TFET)

Solid-State Electronics, 2018
Abstract Numerous researches for making steep tunnel junction within tunnel field-effect transistor (TFET) have been conducted. One of the ways to make an abrupt junction is source/drain silicidation, which uses the phenomenon often called silicide-induced-dopant-segregation.
Sihyun Kim   +6 more
openaire   +1 more source

Ambipolar Behaviour of Tunnel Field Effect Transistor (TFET) as an Advantage for Biosensing Applications

2014
In this work, an analytical model for a dielectric modulated (DM) double gate (DG) Tunnel Field Effect Transistor (TFET) working as a biosensor for label free electrical detection of biomolecules has been proposed. It has been analyzed that the ambipolar behaviour of tunnel field effect transistor can also be used for sensing of the biomolecules when ...
Ajay Singh   +3 more
openaire   +1 more source

Exhaustive experimental study of tunnel field effect transistors (TFETs): From materials to architecture

2009 10th International Conference on Ultimate Integration of Silicon, 2009
The goal of this paper is to present and to analyze the Tunnel FET and its specific properties (small subthreshold swing, very low OFF currents). We investigate the opportunities offered by this sub-“kT/q” swing device and review the issues that TFET has to overcome (ambipolar behaviour, low ON current) for future circuit applications. For that purpose
C. Le Royer, F. Mayer
openaire   +1 more source

Analysis of Cylindrical Gate Junctionless Tunnel Field Effect Transistor (CG-JL-TFET)

2015 Annual IEEE India Conference (INDICON), 2015
In this paper, a Cylindrical Gate Junctionless Tunnel Field Effect Transistor (CG-JL-TFET) has been investigated. This work is based on the simulation study done using Sentaurus. The electrical characteristics such as surface potential, energy band, electric field and drain current of the CG-JL-TFET) has been studied. The impact of different gate oxide
null Ajay   +3 more
openaire   +1 more source

Low voltage tunnel field-effect transistor (TFET) and method of making same

2017
A low voltage tunnel field effect transistor includes a p-n tunnel junction, a gate-dielectric, a gate, a source-contact, and a drain-contact. The p-n tunnel junction includes a depletion region interfacing together a source-layer and a drain-layer. The depletion region includes a source-tunneling-region of the source-layer and a drain-tunneling-region
Seabaugh, Alan C.   +6 more
openaire   +1 more source

An analytical modeling approach for a gate all around (GAA) tunnel field effect transistor (TFET)

SPIE Proceedings, 2012
An analytical model for a gate all around (GAA) Tunnel Field Effect Transistor (TFET) having circular and square cross section geometry has been proposed in this work describing the important device electrostatic parameters i.e. Surface Potential, Electric Field and Energy Band profile.
Rakhi Narang   +3 more
openaire   +1 more source

Investigation of Tunnel Field-Effect Transistors (TFETs) for Label-Free Biosensing

2022
Suneet Kumar Agnihotri   +3 more
openaire   +1 more source

Tunnel Field‐Effect Transistors (TFET)

2016
Jagadesh Kumar Mamidala   +2 more
openaire   +1 more source

Switching Characteristic Analysis of Tunnel Field-Effect Transistor (TFET) Inverters

Journal of Nanoscience and Nanotechnology, 2017
Dae Woong Kwon   +5 more
openaire   +1 more source

Drain current model for a hetero‐dielectric single gate tunnel field effect transistor (HDSG TFET)

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2022
Ajay Kumar Singh   +2 more
exaly  

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