Results 81 to 90 of about 15,872,035 (205)
Sub-10-nm Tunnel Field-Effect Transistor With Graded Si/Ge Heterojunction
, 2020 [[abstract]]This study presents a new sub-10-nm tunnel field-effect transistor ( TFET) with bandgap engineering using a graded Si/Ge heterojunction. Both the height and width of the tunneling barrier are highly controlled by applying gate voltages to ...
Chien, ND
core +1 more source
Steep switching in trimmed-gate tunnel FET
AIP Advances, 2018 We propose a tunnel field-effect transistor (TFET) having a trimmed gate (TG) structure, which considerably improves the subthreshold swing (SS). The TG structure truncates the needless long band-to-band tunneling (BTBT) paths to a “channel”, which ...
Hidehiro Asai +5 more
doaj +1 more source
Illuminating Quantum Phenomena in 2D Materials: The Power of Optical Spectroscopy
Advanced Optical Materials, Volume 13, Issue 31, November 5, 2025.Atomically thin 2D materials host quantum tunnelling, plasmonic and excitonic phenomena driven by reduced dimensionality and strong many‐body interactions. This review links these effects to state‐of‐the‐art optical probes—NSOM, pump–probe, CARS, TRR, and optical frequency comb spectroscopy—highlighting how their ultrahigh spatial–temporal resolution ...
Yuhui Zhou +4 more
wiley +1 more source
DESIGN OF SI/SIGE HETEROJUNCTION LINE TUNNEL FIELD EFFECT TRANSISTOR (TFET) WITH HIGH-K DIELECTRIC
, 2020 In this paper we propose a Si/SiGe heterojunction line tunnel field effect transistor (TFET) with high-K dielectric. The main objective of this device is to increase the ON current. In the case of Si TFETs the ON current is very low.
Flavia Princess +3 more
core
Effects of Back-Gate Bias on Subthreshold Swing of Tunnel Field-Effect Transistor
, 2019 In this study, the effects of back-gate bias on the subthreshold swing (S) of a tunnel field-effect transistor (TFET) were discussed. The electrostatic characteristics of the back-gated TFET were obtained using technology computer-aided design (TCAD ...
Jaehong Lee, Garam Kim, Sangwan Kim
core +1 more source
Advanced Electronic MaterialsCompact in‐memory computing architectures are desirable to embed artificial intelligence (AI) in resource‐restricted edge devices. However, current technologies face limitations in both the area and energy efficiency. Here, a reconfigurable ferroelectric
Zhongyunshen Zhu +2 more
doaj +1 more source
Chemical and biochemical sensors based on silicon nanowire field-effect transistor arrays [PDF]
, 2014 Field-effect transistors (FETs) made from semiconducting nanowires have great potential as electronic biochemical sensors if they can be integrated as an array in a CMOS-compatible architecture together with microfluidic channels and interfacing ...
Wipf, Mathias
core +1 more source
Effect of metal work function of asymmetric dielectric tunnel FET on its performance
, 2021 In the present era, with the advancement of various non-conventional devices, hardware components dimensions are shrinking to great extent. Among those, significant part of researchers focus is drawn by Tunnel Field Effect Transistors (TFETs), because of
N. K. Niranjan +5 more
core +1 more source
A New On-Chip ESD Strategy Using TFETs-TCAD Based Device and Network Simulations
IEEE Journal of the Electron Devices Society, 2018 For the first time, this paper reports the quasi-static behavior and the applicability of the tunnel field effect transistor (TFET) for the on-chip electrostatic discharge (ESD) protection. ESD evaluations are performed on 28-nm fully depleted silicon-on-
Radhakrishnan Sithanandam +1 more
doaj +1 more source
The Tunnel Field-Effect Transistor
, 2016 Scaling of metal-oxide-semiconductor field-effect transistors (MOSFET) is hitting fundamental limits due to power issues. In this article, an alternative transistor concept, the tunnel FET (TFET), is discussed, which employs quantum mechanical band-to ...
Groeseneken, Guido +2 more
core