Results 61 to 70 of about 342 (172)

Switching Performance of Nanotube Core-Shell Heterojunction Electrically Doped Junctionless Tunnel Field Effect Transistor [PDF]

Journal of Optoelectronical Nanostructures, 2020
: In this paper, a novel tunnel field effect transistor (TFET) is introduced, thatdue to its superior gate controllability, can be considered as a promising candidate forthe conventional TFET. The proposed electrically doped heterojunction TFET(EDHJTFET)
Zahra Ahangari
doaj  

Engineering SnSe Isolated State Steep‐Slope MOSFETs for High‐Performance Applications

Advanced Electronic Materials, Volume 11, Issue 20, December 3, 2025.
Steep‐slope MOSFETs for high‐performance and low‐power applications are achieved by applying asymmetric underlap, strain, and a gate‐all‐around design. Abstract To overcome Boltzmann thermal limitation, the study investigates isolated‐state field‐effect transistors based on armchair SnSe nanoribbons using first‐principles calculations and quantum ...
Lu Qin, Juan Lyu, Shenyuan Yang, Shun Song, Jian Gong   +4 more
wiley   +1 more source

Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions

Applied Sciences, 2018
In this work, we demonstrate a strained Si single nanowire tunnel field effect transistor (TFET) with gate-all-around (GAA) structure yielding Ion-current of 15 μA/μm at the supply voltage of Vdd = 0.5V with linear onset at low drain voltages.
Keyvan Narimani, Stefan Trellenkamp, Andreas Tiedemann, Siegfried Mantl, Qing-Tai Zhao   +4 more
doaj   +1 more source

Two-Dimensional Heterojunction Interlayer Tunneling Field Effect Transistors (Thin-TFETs)

IEEE Journal of the Electron Devices Society, 2015
Layered 2-D crystals embrace unique features of atomically thin bodies, dangling bond free interfaces, and step-like 2-D density of states. To exploit these features for the design of a steep slope transistor, we propose a Two-dimensional heterojunction interlayer tunneling field effect transistor (Thin-TFET), where a steep subthreshold swing (SS) of ...
Li, Mingda, ESSENI, David, Nahas, Joseph J., Jena, Debdeep, Xing, Huili Grace   +4 more
openaire   +3 more sources

Gallium Nitride in Heterogeneous Photocatalysis: Fundamental Insights and Emerging Trends

ChemistryEurope, Volume 3, Issue 6, November 11, 2025.
Gallium nitride is a binary III–V direct band gap semiconductor. Recently, it has emerged as a promising material for next‐generation heterogeneous photocatalytic systems due to its unique electronic and structural properties. This review outlines the fundamental principles and key design strategies of heterogeneous photocatalysis and provides a ...
Hyotaik Kang, Chao‐Jun Li
wiley   +1 more source

Steep switching in trimmed-gate tunnel FET

AIP Advances, 2018
We propose a tunnel field-effect transistor (TFET) having a trimmed gate (TG) structure, which considerably improves the subthreshold swing (SS). The TG structure truncates the needless long band-to-band tunneling (BTBT) paths to a “channel”, which ...
Hidehiro Asai, Takahiro Mori, Takashi Matsukawa, Junichi Hattori, Kazuhiko Endo, Koichi Fukuda   +5 more
doaj   +1 more source

Illuminating Quantum Phenomena in 2D Materials: The Power of Optical Spectroscopy

Advanced Optical Materials, Volume 13, Issue 31, November 5, 2025.
Atomically thin 2D materials host quantum tunnelling, plasmonic and excitonic phenomena driven by reduced dimensionality and strong many‐body interactions. This review links these effects to state‐of‐the‐art optical probes—NSOM, pump–probe, CARS, TRR, and optical frequency comb spectroscopy—highlighting how their ultrahigh spatial–temporal resolution ...
Yuhui Zhou, Jiaru Zhang, Guanghui Ren, Bao Yue Zhang, Jian Zhen Ou   +4 more
wiley   +1 more source

A Reconfigurable Ferroelectric Transistor as An Ultra‐Scaled Cell for Low‐Power In‐Memory Data Processing

Advanced Electronic Materials
Compact in‐memory computing architectures are desirable to embed artificial intelligence (AI) in resource‐restricted edge devices. However, current technologies face limitations in both the area and energy efficiency. Here, a reconfigurable ferroelectric
Zhongyunshen Zhu, Anton E. O. Persson, Lars‐Erik Wernersson   +2 more
doaj   +1 more source

A New On-Chip ESD Strategy Using TFETs-TCAD Based Device and Network Simulations

IEEE Journal of the Electron Devices Society, 2018
For the first time, this paper reports the quasi-static behavior and the applicability of the tunnel field effect transistor (TFET) for the on-chip electrostatic discharge (ESD) protection. ESD evaluations are performed on 28-nm fully depleted silicon-on-
Radhakrishnan Sithanandam, Mamidala Jagadesh Kumar   +1 more
doaj   +1 more source

TFET-Based Circuit Design Using the Transconductance Generation Efficiency $ {g}_{m}/ {I}_{d}$ Method

IEEE Journal of the Electron Devices Society, 2015
Tunnel field effect transistors (TFETs) have emerged as one of the most promising post-CMOS transistor technologies. In this paper, we: 1) review the perspectives of such devices for low-power high-frequency analog integrated circuit applications (e.g ...
Leonardo Barboni, Mariana Siniscalchi, Berardi Sensale-Rodriguez   +2 more
doaj   +1 more source