Results 41 to 50 of about 337 (171)

Sub-10-nm Asymmetric Junctionless Tunnel Field-Effect Transistors

IEEE Journal of the Electron Devices Society, 2014
This study presents a new asymmetric junctionless tunnel field-effect transistor (AJ-TFET) to scale TFETs into sub-10-nm regimes. The asymmetric junctionless p+ source/body and junctional n/p+ drain/body separately optimize the lateral source and drain ...
Chun-Hsing Shih, Nguyen Van Kien
doaj   +1 more source

Investigation of Single-Event-Transient Effects Induced by Heavy-Ion in All-Silicon DG-TFET

IEEE Access, 2022
The heavy-ion analysis is a single-event-effect (SEE) that produces a single-event-transient (SET) pulse of current. In this work, the analysis was done to observe the maximum impact of heavy-ions on a calibrated double-gate tunnel field-effect ...
Ashish Maurya, Kalyan Koley, Jitendra Kumar, Pankaj Kumar   +3 more
doaj   +1 more source

Design and TCAD Simulation of p+–n+ InAs‐Based TFET

Nano Select, Volume 7, Issue 3, March 2026.
A physics‐based design and optimization of a p+−n+${{p}^ + } - {{n}^ + }$ InAs tunnel field‐effect transistor is presented using calibrated quantum‐corrected TCAD simulations. By employing a composite figure of merit that unifies digital and RF metrics, the proposed homojunction architecture achieves steep subthreshold swing, enhanced cutoff frequency,
Muhammad Elgamal, Mona El Sabbagh, Fatma Shokry, Ahmed Shaker, Mohammed El‐Banna, Mohamed Abouelatta   +5 more
wiley   +1 more source

Computational design of two‐dimensional MA2Z4 family field‐effect transistor for future Ångström‐scale CMOS technology nodes

InfoMat, Volume 8, Issue 2, February 2026.
Two‐dimensional MA2Z4 such as MoSi2N4 offer a new path to extend transistor scaling beyond the limits of silicon. Due to their exceptional properties, these 2D semiconductors are promising candidates for future Ångström‐scale CMOS technology. This review outlines the computational design and roadmap bridging materials discovery, device design and ...
Che Chen Tho, Zongmeng Yang, Shibo Fang, Shiying Guo, Liemao Cao, Chit Siong Lau, Fei Liu, Shengli Zhang, Jing Lu, L. K. Ang, Lain‐Jong Li, Yee Sin Ang   +11 more
wiley   +1 more source

High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor

Micromachines, 2019
A drain engineered InGaN heterostructure tunnel field effect transistor (TFET) is proposed and investigated by Silvaco Atlas simulation. This structure uses an additional metal on the drain region to modulate the energy band near the drain/channel ...
Xiaoling Duan, Jincheng Zhang, Jiabo Chen, Tao Zhang, Jiaduo Zhu, Zhiyu Lin, Yue Hao   +6 more
doaj   +1 more source

Electrical Transport of Nb‐Doped MoS2 Homojunction P–N Diode: Investigating NDR and Avalanche Effect

Small, Volume 22, Issue 9, 12 February 2026.
Niobium (Nb)‐doped molybdenum disulfide (MoS2) p‐type–n‐type (p–n) homojunction diodes are engineered using thickness‐controlled homo‐interfaces. Current–voltage (I–V) characteristics reveal gate‐tunable rectification, wavelength‐dependent photoresponse, and low‐bias switching.
Ehsan Elahi, Umer Ahsan, Muhammad Farooq Khan, Jamal Aziz, Payal Chauhan, Paweł Piotr Michałowski, Yuan Chen, Goki Eda, Martin Loula, Kalyan Jyoti Sarkar, Zdenek Sofer   +10 more
wiley   +1 more source

Comparative Study of Steep Switching Devices for 1T Dynamic Memory

Tecnología en Marcha
This work focuses on understanding the operation and performance of various steep switching devices (subthreshold slope sub 60 mV/decade), namely Thin-Capacitively Coupled Thyristor (TCCT), Field Effect Diode (FED), Zero sub-threshold swing and Zero ...
Nupur Navlakha, Hasan Raza Ansari, Leonard Register, Sanjay Banerjee   +3 more
doaj   +1 more source

Neuromorphic Device Based on Material and Device Innovation toward Multimode and Multifunction

Advanced Intelligent Systems, Volume 8, Issue 1, January 2026.
In the era of big data, multimodal and multifunctional neuromorphic devices offer significant opportunities in designing AI hardware. In this work, recent advances about emerging material systems and novel device structures in this field are summarized in detail. Potential applications are reviewed.
Feng Guo, Hongda Ren, Yang Zhang, Jianhua Hao   +3 more
wiley   +1 more source

Electrostatically-Doped Hetero-Barrier Tunnel Field Effect Transistor: Design and Investigation

IEEE Access, 2018
In this paper, an electrostatically-doped hetero-barrier tunnel-field-effect-transistor (EDHet-TFET) based on stepped broken-gap (type-III) is simulated, investigated, and compared with the conventionally-doped stepped broken-gap hetero-barrier TFET (Het-
M. Ehteshamuddin, Abdullah G. Alharbi, Sajad A. Loan   +2 more
doaj   +1 more source

Two-Dimensional Heterojunction Interlayer Tunneling Field Effect Transistors (Thin-TFETs)

IEEE Journal of the Electron Devices Society, 2015
Layered 2-D crystals embrace unique features of atomically thin bodies, dangling bond free interfaces, and step-like 2-D density of states. To exploit these features for the design of a steep slope transistor, we propose a Two-dimensional heterojunction interlayer tunneling field effect transistor (Thin-TFET), where a steep subthreshold swing (SS) of ...
Li, Mingda, ESSENI, David, Nahas, Joseph J., Jena, Debdeep, Xing, Huili Grace   +4 more
openaire   +3 more sources