Results 31 to 40 of about 342 (172)
TFET-Based Voltage Detector: Proposal and Investigation
IEEE Access, 2020 In this paper, a tunnel field-effect transistor (TFET)-based voltage detector is proposed and its electrical characteristics are investigated using technology computer-aided design (TCAD) simulation.
Zhaonian Yang, Panqi Gao
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Improvement of Tunnel Field Effect Transistor Performance Using Auxiliary Gate and Retrograde Doping in the Channel [PDF]
Journal of Electrical and Computer Engineering Innovations, 2018 Background and Objectives: In this work, a dual workfunction gate-source pocket-retrograde doping-tunnel field effect transistor (DWG SP RD-TFET) is proposed and investigated.Methods: The dual workfunction gate-source pocket-retrograde doping-tunnel ...
M. Karbalaei, D. Dideban, N. Moezi
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Tunnel Field-Effect Transistors: Prospects and Challenges
IEEE Journal of the Electron Devices Society, 2015 The tunnel field-effect transistor (TFET) is considered a future transistor option due to its steep-slope prospects and the resulting advantages in operating at low supply voltage (VDD). In this paper, using atomistic quantum models that are in agreement
Uygar E. Avci +2 more
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Controlling Ambipolar Current in Tunneling FETs Using Overlapping Gate-on-Drain
IEEE Journal of the Electron Devices Society, 2014 In this paper, we have demonstrated that overlapping the gate on the drain can suppress the ambipolar conduction, which is an inherent property of a tunnel field effect transistor (TFET).
Dawit B. Abdi, M. Jagadesh Kumar
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Journal of Engineering Technology and Applied Physics, 2023 To meet the performance requirements of low power mobile devices, a device with a high ION/IOFF ratio at low-VDD is needed. TFETs are gaining popularity due to their low subthreshold slope and high transconductance compared to MOSFETs.
Tan Chun Fui, Ajay Kumar Singh
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ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam +3 more
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The Evolution of Semiconductor Devices: From Transistors to Quantum and Neuromorphic Computing
physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 8, August 2026.This review presents the evolution of semiconductor devices from BJTs to fin field‐effect transistors (FinFETs), nanowire, and carbon nanotube transistors. It highlights emerging materials, including SiC and GaN, and examines neuromorphic and quantum computing, industry applications, performance benchmarks, challenges, and future directions.
Manoharan Subramanian +6 more
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Electron‐Wave Interference in Zener Tunneling Induced by Dopant Clusters in Silicon pn Junctions
Advanced Quantum Technologies, Volume 9, Issue 7, July 2026.Current oscillations are revealed in the Zener tunneling regime of Si nanoscale pn junctions and are attributed to the interference of coherent electron‐waves in band‐to‐band tunneling transport. Temperature dependence, simulations of random dopant distributions, and numerical interference calculations collectively demonstrate that the interference ...
Daris Alfafa +4 more
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Nanomaterials, 2019 The practical use of tunnel field-effect transistors is retarded by the low on-state current. In this paper, the energy-band engineering of InAs/Si heterojunction and novel device structure of source-pocket concept are combined in a single tunnel field ...
Hongliang Lu +4 more
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Atomic Layer Deposition in Transistors and Monolithic 3D Integration
Advanced Functional Materials, Volume 36, Issue 41, 21 May 2026.Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu +5 more
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