Results 31 to 40 of about 15,872,035 (205)

Universal Charge-Conserving TFET SPICE Model Incorporating Gate Current and Noise

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2016
An analytical compact model for tunnel field-effect transistor (TFET) circuit simulation is extended by adding a gate tunnel current model, a charge-based capacitor model, and a noise model. The equation set is broadly applicable across materials systems
Hao Lu, Wenjun Li, Yeqing Lu, Patrick Fay, Trond Ytterdal, Alan Seabaugh   +5 more
doaj   +1 more source

Source-all-around tunnel field-effect transistor (SAA-TFET): proposal and design [PDF]

Semiconductor Science and Technology, 2019
Abstract In this paper, a new source-all-around tunnel field-effect transistor (SAA-TFET) is proposed and investigated by using TCAD simulation. The tunneling junction in the SAA-TFET is divided laterally and vertically with respect to the channel direction which provides a relatively large tunneling junction area.
Ahmed Shaker, Ahmed Maged, Ali Elshorbagy, Abdallh AbouElainain, Mona Elsabbagh   +4 more
openaire   +1 more source

Effect of band to band tunnelling (BTBT) on multi-gate Tunnel field effect transistors (TFETs)-A Review

IOP Conference Series: Materials Science and Engineering, 2021
Abstract TFETs (tunnel field effect transistor) are providing solution to affairs associated with conventional MOSFET devices such as short-channel effects (SCEs) and limitation of minimum (60 mV/decade) subthreshold slope (SS). TFET is a p-i-n diode which conducts in reverse bias and behaves like a transistor due to tunnelling mechanism
P Shilla, V Verma, R Kumar, A Kumar
openaire   +1 more source

Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness

Nanoscale Research Letters, 2020
Double-gate tunnel field-effect transistor (DG TFET) is expected to extend the limitations of leakage current and subthreshold slope. However, it also suffers from the ambipolar behavior with the symmetrical source/drain architecture.
Maolin Zhang, Yufeng Guo, Jun Zhang, Jiafei Yao, Jing Chen   +4 more
doaj   +1 more source

Analytical model and simulation‐based analysis of a work function engineered triple metal tunnel field‐effect transistor device showing excellent device performance

IET Circuits, Devices and Systems, 2021
In this study, the authors propose a work function engineered (WFE) triple metal (TM) tunnel field‐effect transistor (TFET) device, which exhibits lower subthreshold slope (SS) and better on to off current ratio in comparison with conventional double ...
Ria Bose, Jatindra Nath Roy
doaj   +1 more source

Advancing the Frontiers of HfO₂-Based Ferroelectric Memories: Innovative Concepts from Materials to Applications. [PDF]

Adv Mater
HfO2‐based ferroelectric materials are promising for next‐generation memory technologies by providing outstanding performance aligning with data‐centric computing needs. This review details recent advancements in materials, devices, and integration for HfO2‐based memories, with the goal of identifying both the technological opportunities and remaining ...
Zhou Z, Li L, Feng Y, Wang X, Zheng Z, Jiao L, Zheng H, Shi Y, Ang KW, Gong X.   +9 more
europepmc   +2 more sources

Tunnel field effect transistor (TFET) with lateral oxidation

, 2011
A vertical-mode tunnel field-effect transistor (TFET) is provided with an oxide region that may be laterally positioned relative to a source region.
Lee, Jack C., Zhao, Han
core   +1 more source

Improvement of Tunnel Field Effect Transistor Performance Using Auxiliary Gate and Retrograde Doping in the Channel [PDF]

Journal of Electrical and Computer Engineering Innovations, 2018
Background and Objectives: In this work, a dual workfunction gate-source pocket-retrograde doping-tunnel field effect transistor (DWG SP RD-TFET) is proposed and investigated.Methods: The dual workfunction gate-source pocket-retrograde doping-tunnel ...
M. Karbalaei, D. Dideban, N. Moezi
doaj   +1 more source

Tunnel Field-Effect Transistors: Prospects and Challenges

IEEE Journal of the Electron Devices Society, 2015
The tunnel field-effect transistor (TFET) is considered a future transistor option due to its steep-slope prospects and the resulting advantages in operating at low supply voltage (VDD). In this paper, using atomistic quantum models that are in agreement
Uygar E. Avci, Daniel H. Morris, Ian A. Young   +2 more
doaj   +1 more source

TFET-Based Voltage Detector: Proposal and Investigation

IEEE Access, 2020
In this paper, a tunnel field-effect transistor (TFET)-based voltage detector is proposed and its electrical characteristics are investigated using technology computer-aided design (TCAD) simulation.
Zhaonian Yang, Panqi Gao
doaj   +1 more source