Study of Electrical Performance of Hetero-Dielectric Gate Tunnel Field Effect Transistor (HDG TFET): A Novel Structure for Future Nanotechnology [PDF]
Journal of Engineering Technology and Applied Physics, 2022 Although, dynamic power in portable mobile devices can be reduced by reducing power supply VDDon the cost of increased leakage current. Therefore, maintaining low leakage current in the device is serious issue for minimizing overall ...
Tan Chun Fui +2 more
doaj +4 more sources
Optimization of Tunnel Field-Effect Transistor-Based ESD Protection Network
Crystals, 2021 The tunnel field-effect transistor (TFET) is a potential candidate for replacing the reverse diode and providing a secondary path in a whole-chip electrostatic discharge (ESD) protection network.
Zhihua Zhu +5 more
doaj +2 more sources
In-Line Tunnel Field Effect Transistor: Drive Current Improvement
IEEE Journal of the Electron Devices Society, 2018 A new architecture of tunnel field effect transistor (TFET) with in-line (vertical) tunneling area is introduced. By adding the vertical tunneling area, the in-line TFET architecture outperformed the normal TFET in terms of the drive current, the ...
Woojin Park +3 more
doaj +2 more sources
Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor
Nature Communications, 2023 Reconfigurable transistors are an emerging device technology adding new functionalities while lowering the circuit architecture complexity. However, most investigations focus on digital applications.
Zhongyunshen Zhu +2 more
doaj +3 more sources
High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor
Micromachines, 2019 A drain engineered InGaN heterostructure tunnel field effect transistor (TFET) is proposed and investigated by Silvaco Atlas simulation. This structure uses an additional metal on the drain region to modulate the energy band near the drain/channel ...
Xiaoling Duan +6 more
doaj +2 more sources
Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain
Micromachines, 2019 In this paper, a novel tunnel field-effect transistor (TFET) has been demonstrated. The proposed TFET features a SiGe channel, a fin structure and an elevated drain to improve its electrical performance. As a result, it shows high-level ON-state current (
Jang Hyun Kim +4 more
doaj +2 more sources
Switching Performance of Nanotube Core-Shell Heterojunction Electrically Doped Junctionless Tunnel Field Effect Transistor [PDF]
Journal of Optoelectronical Nanostructures, 2020 : In this paper, a novel tunnel field effect transistor (TFET) is introduced, thatdue to its superior gate controllability, can be considered as a promising candidate forthe conventional TFET. The proposed electrically doped heterojunction TFET(EDHJTFET)
Zahra Ahangari
doaj +1 more source
Discover Nano, 2023 This study presents a gate-all-around InAs–Si vertical tunnel field-effect transistor with a triple metal gate (VTG-TFET). We obtained improved switching characteristics for the proposed design because of the improved electrostatic control on the channel
Dariush Madadi, Saeed Mohammadi
doaj +1 more source
Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) [PDF]
Nano Convergence, 2016 The steady scaling-down of semiconductor device for improving performance has been the most important issue among researchers. Recently, as low-power consumption becomes one of the most important requirements, there have been many researches about novel devices for low-power consumption.
Choi, Woo Young, Lee, Hyun Kook
openaire +2 more sources
Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET
IEEE Journal of the Electron Devices Society, 2016 A bilayer graphene-based electrostatically doped tunnel field-effect transistor (BED-TFET) is proposed. Unlike graphene nanoribbon TFETs in which the edge states deteriorate the OFF-state performance, BED-TFETs operate based on bandgaps induced by ...
Fan W. Chen +4 more
doaj +1 more source