Results 21 to 30 of about 15,872,035 (205)
Investigation of Radiation Hardened TFET SRAM Cell for Mitigation of Single Event Upset
IEEE Journal of the Electron Devices Society, 2020 This study analyzes the soft error sensitivity of SRAM cell which employs double-gate tunnel field effect transistor (DG TFET). The mitigation technique for the data recovery after the heavy ion strike is discussed.
M. Pown, B. Lakshmi
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Dependency of Tunneling Field-Effect Transistor(TFET) Characteristics on Operation Regions [PDF]
JSTS:Journal of Semiconductor Technology and Science, 2011 In this paper, two competing mechanisms determining drain current of tunneling field-effect transistors (TFETs) have been investigated such as band-to-band tunneling and drift. Based on the results, the characteristics of TFETs have been discussed in the tunneling-dominant and drift- dominant region.
Min-Jin Lee, Woo-Young Choi
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Tunnel Field-Effect Transistor With Segmented Channel
IEEE Journal of the Electron Devices Society, 2019 A tunnel field-effect transistor with segmented channels (Seg-TFET) on a corrugated substrate is proposed. The Seg-TFET takes advantage of using three stripes and the selective contact configuration to define the direction of current, and thereby its ...
Jaesoo Park, Changhwan Shin
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IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020 The tunnel field-effect transistor (TFET) is a promising solution for high energy-efficient circuits. Based on the band-to-band tunneling (BTBT) condition, fast switching characteristic with a steep subthreshold swing (SS) in the ultralow-voltage ...
Jo-Han Hung +5 more
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Characterization of silicon tunnel field effect transistor based on charge plasma [PDF]
, 2022 The aim of the proposed paper is an analytical model and realization of the characteristics for tunnel field-effect transistor (TFET) based on charge plasma (CP). One of the most applications of the TFET device which operates based on CP technique is the
Taha, Faris Hassan +1 more
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Silicon spin diffusion transistor: materials, physics and device characteristics
, 2005 The realisation that eaveryday electronics has ignored the spin of the carrier in favour of its charge is the foundation of the field of spintronics. Starting with simple two-terminal devices based on GMR and tunnel magnetoresistance, the technology has ...
Tiusan, C +15 more
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IEEE Journal of the Electron Devices Society, 2015 A single grain boundary dopingless PNPN tunnel field effect transistor (TFET) on recrystallized polycrystalline silicon is studied by varying the position of the grain boundary in the channel.
Mamidala Saketh Ram, Dawit Burusie Abdi
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Nanoscale Research Letters, 2021 A bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS integrated ...
Xiaoshi Jin +5 more
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Characterization of silicon tunnel field effect transistor based oncharge plasma
, 2023 The aim of the proposed paper is an analytical model and realization of thecharacteristics for tunnel field-effect transistor (TFET) based on chargeplasma (CP).
Firas Natheer (16958826)
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Improving ESD Protection Robustness Using SiGe Source/Drain Regions in Tunnel FET
Micromachines, 2018 Currently, a tunnel field-effect transistor (TFET) is being considered as a suitable electrostatic discharge (ESD) protection device in advanced technology.
Zhaonian Yang +3 more
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