Results 51 to 60 of about 337 (171)
Micro &Nano Letters, Volume 21, Issue 1, January/December 2026.This study presents a numerical quantum transport analysis of graphene nanoribbon field‐effect transistors (GNRFETs) using the non‐equilibrium Green's function (NEGF) formalism. The results show that reducing the channel length and optimizing dielectric materials, such as HfSiO4, significantly enhance ON‐state current and the Ion/Ioff ratio.
Mahamudul Hassan Fuad
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Micromachines, 2019 L-shaped tunnel field-effect transistor (TFET) provides higher on-current than a conventional TFET through band-to-band tunneling in the vertical direction of the channel.
Junsu Yu +7 more
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Advanced Electronic Materials, Volume 11, Issue 20, December 3, 2025.A high‐density and highly‐reliable capacitive time‐domain (TD) content‐addressable memory (CAM) based on a single ambipolar ferroelectric memcapacitor with band‐reject‐filter‐shaped capacitance‐voltage characteristics is proposed. The proposed TD CAM performs linear Hamming distance computation via propagation delay modulation, achieving improved ...
Minjeong Ryu +5 more
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TBAL: Tunnel FET-Based Adiabatic Logic for Energy-Efficient, Ultra-Low Voltage IoT Applications
IEEE Journal of the Electron Devices Society, 2019 A novel, tunnel field-effect transistor (TFET)-based adiabatic logic (TBAL) circuit topology has been proposed, evaluated and benchmarked with several device architectures (planar MOSFET, FinFET, and TFET) and AL implementations (efficient charge ...
Jheng-Sin Liu +2 more
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Advanced Electronic Materials, Volume 11, Issue 21, December 17, 2025.Vertical electric‑field‑induced bandgap narrowing in bilayer MoS2 dynamically reduces the Schottky barrier height, achieving sub‑60 mV/dec switching. Incorporating band‑edge shifts estimated from DFT results into transport simulations, the bilayer MoS2 SB‑FET achieves a 44.7 mV/dec subthreshold swing and 38 % faster CMOS inverter switching with 5 ...
Gyeong Min Seo +2 more
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Engineering SnSe Isolated State Steep‐Slope MOSFETs for High‐Performance Applications
Advanced Electronic Materials, Volume 11, Issue 20, December 3, 2025.Steep‐slope MOSFETs for high‐performance and low‐power applications are achieved by applying asymmetric underlap, strain, and a gate‐all‐around design. Abstract To overcome Boltzmann thermal limitation, the study investigates isolated‐state field‐effect transistors based on armchair SnSe nanoribbons using first‐principles calculations and quantum ...
Lu Qin +4 more
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Gallium Nitride in Heterogeneous Photocatalysis: Fundamental Insights and Emerging Trends
ChemistryEurope, Volume 3, Issue 6, November 11, 2025.Gallium nitride is a binary III–V direct band gap semiconductor. Recently, it has emerged as a promising material for next‐generation heterogeneous photocatalytic systems due to its unique electronic and structural properties. This review outlines the fundamental principles and key design strategies of heterogeneous photocatalysis and provides a ...
Hyotaik Kang, Chao‐Jun Li
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Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain
Micromachines, 2019 In this paper, a novel tunnel field-effect transistor (TFET) has been demonstrated. The proposed TFET features a SiGe channel, a fin structure and an elevated drain to improve its electrical performance. As a result, it shows high-level ON-state current (
Jang Hyun Kim +4 more
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Illuminating Quantum Phenomena in 2D Materials: The Power of Optical Spectroscopy
Advanced Optical Materials, Volume 13, Issue 31, November 5, 2025.Atomically thin 2D materials host quantum tunnelling, plasmonic and excitonic phenomena driven by reduced dimensionality and strong many‐body interactions. This review links these effects to state‐of‐the‐art optical probes—NSOM, pump–probe, CARS, TRR, and optical frequency comb spectroscopy—highlighting how their ultrahigh spatial–temporal resolution ...
Yuhui Zhou +4 more
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Band-Offset Engineering for GeSn-SiGeSn Hetero Tunnel FETs and the Role of Strain
IEEE Journal of the Electron Devices Society, 2015 In this paper a simulation study of the effect of conduction and valence band offsets on the subthreshold swing (SS) of a double-gate tunnel field-effect transistor (TFET) with gate-overlapped source is presented.
Saurabh Sant, Andreas Schenk
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