Results 51 to 60 of about 342 (172)

Electrostatically-Doped Hetero-Barrier Tunnel Field Effect Transistor: Design and Investigation

IEEE Access, 2018
In this paper, an electrostatically-doped hetero-barrier tunnel-field-effect-transistor (EDHet-TFET) based on stepped broken-gap (type-III) is simulated, investigated, and compared with the conventionally-doped stepped broken-gap hetero-barrier TFET (Het-
M. Ehteshamuddin, Abdullah G. Alharbi, Sajad A. Loan   +2 more
doaj   +1 more source

Electrical Transport of Nb‐Doped MoS2 Homojunction P–N Diode: Investigating NDR and Avalanche Effect

Small, Volume 22, Issue 9, 12 February 2026.
Niobium (Nb)‐doped molybdenum disulfide (MoS2) p‐type–n‐type (p–n) homojunction diodes are engineered using thickness‐controlled homo‐interfaces. Current–voltage (I–V) characteristics reveal gate‐tunable rectification, wavelength‐dependent photoresponse, and low‐bias switching.
Ehsan Elahi, Umer Ahsan, Muhammad Farooq Khan, Jamal Aziz, Payal Chauhan, Paweł Piotr Michałowski, Yuan Chen, Goki Eda, Martin Loula, Kalyan Jyoti Sarkar, Zdenek Sofer   +10 more
wiley   +1 more source

Neuromorphic Device Based on Material and Device Innovation toward Multimode and Multifunction

Advanced Intelligent Systems, Volume 8, Issue 1, January 2026.
In the era of big data, multimodal and multifunctional neuromorphic devices offer significant opportunities in designing AI hardware. In this work, recent advances about emerging material systems and novel device structures in this field are summarized in detail. Potential applications are reviewed.
Feng Guo, Hongda Ren, Yang Zhang, Jianhua Hao   +3 more
wiley   +1 more source

TBAL: Tunnel FET-Based Adiabatic Logic for Energy-Efficient, Ultra-Low Voltage IoT Applications

IEEE Journal of the Electron Devices Society, 2019
A novel, tunnel field-effect transistor (TFET)-based adiabatic logic (TBAL) circuit topology has been proposed, evaluated and benchmarked with several device architectures (planar MOSFET, FinFET, and TFET) and AL implementations (efficient charge ...
Jheng-Sin Liu, Michael B. Clavel, Mantu K. Hudait   +2 more
doaj   +1 more source

Design and Performance Analysis of Dielectrically Modulated Diagonal Tunneling TFET for Label Free Sensing

IET Circuits, Devices &Systems, Volume 2026, Issue 1, 2026.
This paper presents a novel architecture the diagonal tunneling dielectrically modulated tunnel field effect transistor (DT‐DMTFET) for label‐free biosensing applications. The study employs TCAD (Silvaco TCAD) simulations to comprehensively analyze the behavior of the DT‐DMTFET biosensor focusing on key parameters such as drain current, sub‐threshold ...
I. Rama Satya Nageswara Rao, Srinivasa Rao Karumuri, Paolo Marconcini   +2 more
wiley   +1 more source

A Comprehensive Study of Quantum Transport Effects on Graphene Nanoribbon Field‐Effect Transistors (GNRFET)

Micro &Nano Letters, Volume 21, Issue 1, January/December 2026.
This study presents a numerical quantum transport analysis of graphene nanoribbon field‐effect transistors (GNRFETs) using the non‐equilibrium Green's function (NEGF) formalism. The results show that reducing the channel length and optimizing dielectric materials, such as HfSiO4, significantly enhance ON‐state current and the Ion/Ioff ratio.
Mahamudul Hassan Fuad
wiley   +1 more source

Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain

Micromachines, 2019
In this paper, a novel tunnel field-effect transistor (TFET) has been demonstrated. The proposed TFET features a SiGe channel, a fin structure and an elevated drain to improve its electrical performance. As a result, it shows high-level ON-state current (
Jang Hyun Kim, Hyun Woo Kim, Garam Kim, Sangwan Kim, Byung-Gook Park   +4 more
doaj   +1 more source

Time‐Domain Content‐Addressable Memory Based on Single Ambipolar Ferroelectric Memcapacitor for High‐Density and Highly‐Precise Distance Function Computation

Advanced Electronic Materials, Volume 11, Issue 20, December 3, 2025.
A high‐density and highly‐reliable capacitive time‐domain (TD) content‐addressable memory (CAM) based on a single ambipolar ferroelectric memcapacitor with band‐reject‐filter‐shaped capacitance‐voltage characteristics is proposed. The proposed TD CAM performs linear Hamming distance computation via propagation delay modulation, achieving improved ...
Minjeong Ryu, Jae Seung Woo, Yeonwoo Kim, Joo Hyeon Jeon, Sung In Cho, Woo Young Choi   +5 more
wiley   +1 more source

Band-Offset Engineering for GeSn-SiGeSn Hetero Tunnel FETs and the Role of Strain

IEEE Journal of the Electron Devices Society, 2015
In this paper a simulation study of the effect of conduction and valence band offsets on the subthreshold swing (SS) of a double-gate tunnel field-effect transistor (TFET) with gate-overlapped source is presented.
Saurabh Sant, Andreas Schenk
doaj   +1 more source

Gate Field‐Induced Dynamic Schottky Barrier Height Reduction in Bilayer MoS2 for Sub‐60 mV/dec Schottky Barrier FETs

Advanced Electronic Materials, Volume 11, Issue 21, December 17, 2025.
Vertical electric‑field‑induced bandgap narrowing in bilayer MoS2 dynamically reduces the Schottky barrier height, achieving sub‑60 mV/dec switching. Incorporating band‑edge shifts estimated from DFT results into transport simulations, the bilayer MoS2 SB‑FET achieves a 44.7 mV/dec subthreshold swing and 38 % faster CMOS inverter switching with 5 ...
Gyeong Min Seo, Jeong Wook Kim, Byoung Don Kong   +2 more
wiley   +1 more source