Results 71 to 80 of about 342 (172)
International Journal of Innovative Technology and Exploring Engineering, 2019 Tunnel Field Effect Transistor (TFET) is gated reverse biased P-I-N diode structured semiconductor device and can be considered as a reliable low power device. TCAD (Sentaurus 2D) simulations for various Gate metal work function (4.1-4.3 eV) shows that its ON-current (ION) arises from quantum mechanical band-to-band tunneling (B2BT) and observed that ...
Deepak Kumar +3 more
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DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As
Holos, 2018 Using calibrated simulations, we report the In0.35Ga0.65As based tunnel field-effect transistor (TFET) with thin δ-doped n+ pocket at the source-channel interface to improve the parameters such as on current (Ion), off-current (Ioff) and subthreshold ...
Behnam Dorostkar, Saeid Marjani
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IEEE Transactions on Electron Devices, 2019 Being fundamentally limited to a current–voltage steepness of 60mV/dec, MOSFETs struggle to operate below 0.6 V. Further reduction in ${V}_{\text {DD}}$ and, consequently, power consumption can be achieved with novel devices, such as tunneling transistors (TFETs) that can overcome this limitation.
Tarek A. Ameen +5 more
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Performance Study and Analysis of Heterojunction Gate All Around Nanowire Tunneling Field Effect Transistor [PDF]
Journal of Optoelectronical Nanostructures, 2019 In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details.
Mahsa Roohy, Reza Hosseini
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Random Dopant Fluctuation Effects of Tunneling Field-Effect Transistors (TFETs) [PDF]
Journal of the Institute of Electronics and Information Engineers, 2012 Jung-Shik Jang +2 more
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Miller effect suppression of tunnel field‐effect transistors (TFETs) using capacitor neutralisation
Electronics Letters, 2016 A novel method of suppressing the Miller effects of tunnel field‐effect transistors (TFETs) is proposed by using capacitor neutralisation. Since TFETs suffer from more severe Miller effects than metal‐oxide‐semiconductor FETs, conventional ways such as short‐gate structures are not sufficient to fully suppress the Miller effects of TFETs.
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IET Circuits, Devices and SystemsThis study explores the impact of integrating a gallium arsenide (GaAs) pocket at the source and drain in a dual-material gate-oxide-stack double-gate tunnel field-effect transistor (DMGOSDG-TFET).
Km. Sucheta Singh +4 more
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Nano-biosensors with subthreshold swing tunnel field effect transistor: A cutting-edge review
Sensing and Bio-Sensing ResearchA thorough investigation into the development and performance assessment of biosensors that utilize Tunnel Field Effect Transistors (TFETs), showcasing a departure from conventional bio-sensing approaches is carried out.
M. Poorna Sundari, G. Lakshmi Priya
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Design of a Double Gate Tunneling Field Effect Transistor (DG-TFET) and Performance Analysis
Journal of Integrated Circuits and SystemsThe Double-Gate Tunnel Field-Effect Transistor (DG-TFET) has emerged as a promising contender in modern semiconductor technology, offering distinct advantages over conventional devices. This paper delves into the pivotal performance metrics of DG-TFETs: sub-threshold slope (SS), ON current (Ion), and work function modulation, which collectively ...
Chinnala Pavan Kumar, K Sivani
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