Results 71 to 80 of about 15,872,035 (205)

A silicon nanocrystal tunnel field effect transistor [PDF]

, 2014
: In this work, we demonstrate a silicon nanocrystal Field Effect Transistor (ncFET). Its operation is similar to that of a Tunnelling Field Effect Transistor (TFET) with two barriers in series. The tunnelling barriers are fabricated in very thin silicon
Michel Pioro-Ladrière, Harvey-Collard, Patrick, Drouin, Dominique, Patrick Harvey-Collard, Dominique Drouin, Pioro-Ladrière, Michel   +5 more
core   +1 more source

Time‐Domain Content‐Addressable Memory Based on Single Ambipolar Ferroelectric Memcapacitor for High‐Density and Highly‐Precise Distance Function Computation

Advanced Electronic Materials, Volume 11, Issue 20, December 3, 2025.
A high‐density and highly‐reliable capacitive time‐domain (TD) content‐addressable memory (CAM) based on a single ambipolar ferroelectric memcapacitor with band‐reject‐filter‐shaped capacitance‐voltage characteristics is proposed. The proposed TD CAM performs linear Hamming distance computation via propagation delay modulation, achieving improved ...
Minjeong Ryu, Jae Seung Woo, Yeonwoo Kim, Joo Hyeon Jeon, Sung In Cho, Woo Young Choi   +5 more
wiley   +1 more source

Two-Dimensional Heterojunction Interlayer Tunneling Field Effect Transistors (Thin-TFETs)

IEEE Journal of the Electron Devices Society, 2015
Layered 2-D crystals embrace unique features of atomically thin bodies, dangling bond free interfaces, and step-like 2-D density of states. To exploit these features for the design of a steep slope transistor, we propose a Two-dimensional heterojunction interlayer tunneling field effect transistor (Thin-TFET), where a steep subthreshold swing (SS) of ...
Li, Mingda, ESSENI, David, Nahas, Joseph J., Jena, Debdeep, Xing, Huili Grace   +4 more
openaire   +3 more sources

Ultra low power circuits design based on III-V group heterojunction tunnel field effect transistor

, 2015
With the scaling down of MOSFET, the static leakage current increases exponentially since the Subthreshold Swing(SS) is limited by the thermal theory to 60mV/dec. Tunnel field effect transistors based on BTBT have slope Subthreshold Swing and can be used
Xin'an Wang, Gao, Fang, Fang Gao, Jipan Huang, Chen, Hongying, Hongying Chen, Huang, Jipan, Wang, Xin'An   +7 more
core   +1 more source

Band-Offset Engineering for GeSn-SiGeSn Hetero Tunnel FETs and the Role of Strain

IEEE Journal of the Electron Devices Society, 2015
In this paper a simulation study of the effect of conduction and valence band offsets on the subthreshold swing (SS) of a double-gate tunnel field-effect transistor (TFET) with gate-overlapped source is presented.
Saurabh Sant, Andreas Schenk
doaj   +1 more source

Gate Field‐Induced Dynamic Schottky Barrier Height Reduction in Bilayer MoS2 for Sub‐60 mV/dec Schottky Barrier FETs

Advanced Electronic Materials, Volume 11, Issue 21, December 17, 2025.
Vertical electric‑field‑induced bandgap narrowing in bilayer MoS2 dynamically reduces the Schottky barrier height, achieving sub‑60 mV/dec switching. Incorporating band‑edge shifts estimated from DFT results into transport simulations, the bilayer MoS2 SB‑FET achieves a 44.7 mV/dec subthreshold swing and 38 % faster CMOS inverter switching with 5 ...
Gyeong Min Seo, Jeong Wook Kim, Byoung Don Kong   +2 more
wiley   +1 more source

Engineering SnSe Isolated State Steep‐Slope MOSFETs for High‐Performance Applications

Advanced Electronic Materials, Volume 11, Issue 20, December 3, 2025.
Steep‐slope MOSFETs for high‐performance and low‐power applications are achieved by applying asymmetric underlap, strain, and a gate‐all‐around design. Abstract To overcome Boltzmann thermal limitation, the study investigates isolated‐state field‐effect transistors based on armchair SnSe nanoribbons using first‐principles calculations and quantum ...
Lu Qin, Juan Lyu, Shenyuan Yang, Shun Song, Jian Gong   +4 more
wiley   +1 more source

Design guideline of tunnel field-effect transistors (TFETs) considering negative differential transconductance (NDT)

, 2020
A gate-normal tunnel field-effect transistor (TFET) showing negative differential transconductance (NDT) and its design guideline are proposed.
Lee, Jang Woo, Choi, Woo Young
core   +1 more source

Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions

Applied Sciences, 2018
In this work, we demonstrate a strained Si single nanowire tunnel field effect transistor (TFET) with gate-all-around (GAA) structure yielding Ion-current of 15 μA/μm at the supply voltage of Vdd = 0.5V with linear onset at low drain voltages.
Keyvan Narimani, Stefan Trellenkamp, Andreas Tiedemann, Siegfried Mantl, Qing-Tai Zhao   +4 more
doaj   +1 more source

Gallium Nitride in Heterogeneous Photocatalysis: Fundamental Insights and Emerging Trends

ChemistryEurope, Volume 3, Issue 6, November 11, 2025.
Gallium nitride is a binary III–V direct band gap semiconductor. Recently, it has emerged as a promising material for next‐generation heterogeneous photocatalytic systems due to its unique electronic and structural properties. This review outlines the fundamental principles and key design strategies of heterogeneous photocatalysis and provides a ...
Hyotaik Kang, Chao‐Jun Li
wiley   +1 more source