Results 71 to 80 of about 337 (171)

A New On-Chip ESD Strategy Using TFETs-TCAD Based Device and Network Simulations

IEEE Journal of the Electron Devices Society, 2018
For the first time, this paper reports the quasi-static behavior and the applicability of the tunnel field effect transistor (TFET) for the on-chip electrostatic discharge (ESD) protection. ESD evaluations are performed on 28-nm fully depleted silicon-on-
Radhakrishnan Sithanandam, Mamidala Jagadesh Kumar   +1 more
doaj   +1 more source

TFET-Based Circuit Design Using the Transconductance Generation Efficiency $ {g}_{m}/ {I}_{d}$ Method

IEEE Journal of the Electron Devices Society, 2015
Tunnel field effect transistors (TFETs) have emerged as one of the most promising post-CMOS transistor technologies. In this paper, we: 1) review the perspectives of such devices for low-power high-frequency analog integrated circuit applications (e.g ...
Leonardo Barboni, Mariana Siniscalchi, Berardi Sensale-Rodriguez   +2 more
doaj   +1 more source

DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As

Holos, 2018
Using calibrated simulations, we report the In0.35Ga0.65As based tunnel field-effect transistor (TFET) with thin δ-doped n+ pocket at the source-channel interface to improve the parameters such as  on current (Ion), off-current (Ioff) and subthreshold ...
Behnam Dorostkar, Saeid Marjani
doaj   +1 more source

Miller effect suppression of tunnel field‐effect transistors (TFETs) using capacitor neutralisation

Electronics Letters, 2016
A novel method of suppressing the Miller effects of tunnel field‐effect transistors (TFETs) is proposed by using capacitor neutralisation. Since TFETs suffer from more severe Miller effects than metal‐oxide‐semiconductor FETs, conventional ways such as short‐gate structures are not sufficient to fully suppress the Miller effects of TFETs.
openaire   +1 more source

Random Dopant Fluctuation Effects of Tunneling Field-Effect Transistors (TFETs) [PDF]

Journal of the Institute of Electronics and Information Engineers, 2012
Jung-Shik Jang, Hyun Kook Lee, Woo Young Choi   +2 more
openaire   +1 more source

Performance Study and Analysis of Heterojunction Gate All Around Nanowire Tunneling Field Effect Transistor [PDF]

Journal of Optoelectronical Nanostructures, 2019
In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details.
Mahsa Roohy, Reza Hosseini
doaj  

Performance Assessment of GaAs Pocket-Doped Dual-Material Gate-Oxide-Stack DG-TFET at Device and Circuit Level

IET Circuits, Devices and Systems
This study explores the impact of integrating a gallium arsenide (GaAs) pocket at the source and drain in a dual-material gate-oxide-stack double-gate tunnel field-effect transistor (DMGOSDG-TFET).
Km. Sucheta Singh, Satyendra Kumar, Saurabh Chaturvedi, Kapil Dev Tyagi, Vaibhav Bhushan Tyagi   +4 more
doaj   +1 more source

Design of a Double Gate Tunneling Field Effect Transistor (DG-TFET) and Performance Analysis

Journal of Integrated Circuits and Systems
The Double-Gate Tunnel Field-Effect Transistor (DG-TFET) has emerged as a promising contender in modern semiconductor technology, offering distinct advantages over conventional devices. This paper delves into the pivotal performance metrics of DG-TFETs: sub-threshold slope (SS), ON current (Ion), and work function modulation, which collectively ...
Chinnala Pavan Kumar, K Sivani
openaire   +1 more source

Nano-biosensors with subthreshold swing tunnel field effect transistor: A cutting-edge review

Sensing and Bio-Sensing Research
A thorough investigation into the development and performance assessment of biosensors that utilize Tunnel Field Effect Transistors (TFETs), showcasing a departure from conventional bio-sensing approaches is carried out.
M. Poorna Sundari, G. Lakshmi Priya
doaj   +1 more source