Results 91 to 100 of about 104,391 (313)

Magnetism and Nonlinear Charge Transport in NiFe2O4/γ‐Al2O3/SrTiO3 Heterostructure: Toward Spintronic Applications

Advanced Functional Materials, EarlyView.
In this report, we demonstrate that a crystalline phase of 52nm thick NiFe2O4 can be grown by RF sputtering on top of γ‐Al2O3(8nm)/SrTiO3 at a significantly low temperature (150 °C) without compromising the mobility and carrier density of the 2D electron gas at the γ‐Al2O3(8nm)/SrTiO3 interface.
Amit Chanda, Thor Hvid‐Olsen, Christina Hoegfeldt, Anshu Gupta, Alessandro Palliotto, Fardin Ghaffari‐Tabrizi, Maja A. Dunstan, Kasper S. Pedersen, Dae‐Sung Park, Damon J. Carrad, Thomas Sand Jespersen, Felix Trier   +11 more
wiley   +1 more source

A novel approach for determining the peak-to-valley current ratio in nanomaterial devices

Results in Physics
The peak-to-valley current ratio (PVCR) was determined using a new method based on the transfer matrix technique. This method was applied to right-triangular (sawtooth) and rectangular nanomaterial double barrier diodes composed of GaAs-Ga1-yAlyAs ...
A.M. Elabsy
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Geometry engineering of tunneling transistors in transition metal dichalcogenide nanoribbon heterojunctions

Communications Physics
Graphene nanoribbon heterojunctions are promising one-dimensional materials for quantum electronics due to their tunable bandgap and sizable quantum confinement.
Ye Jiang, Minjiang Dan, Shuaiwei Fan, Gongwei Hu, Fobao Huang, Wei-Yang Wang, Qiao Chen   +6 more
doaj   +1 more source

Recovering the stationary phase condition for accurately obtaining scattering and tunneling times

, 2008
The stationary phase method is often employed for computing tunneling {\em phase} times of analytically-continuous {\em gaussian} or infinite-bandwidth step pulses which collide with a potential barrier.
A. E. BERNARDINI, Bohm D., Brillouin L., Cutler R. G., Fertig H. A., Kelvin L., Mitchell M. W., Nimtz G., Pres A.   +8 more
core   +1 more source

Kelvin Probe Force Microscopy in Bionanotechnology: Current Advances and Future Perspectives

Advanced Materials, EarlyView.
Kelvin probe force microscopy (KPFM) enables the nanoscale mapping of electrostatic surface potentials. While widely applied in materials science, its use in biological systems remains emerging. This review presents recent advances in KPFM applied to biological samples and provides a critical perspective on current limitations and future directions for
Ehsan Rahimi, Mario Palacios‐Corella, Arjan Mol, Salvador Pané, Josep Puigmartí‐Luis   +4 more
wiley   +1 more source

Microwave Impedance Spectroscopy and Temperature Effects on the Electrical Properties of Au/BN/C Interfaces

Active and Passive Electronic Components, 2017
In the current study, an Au/BN/C microwave back-to-back Schottky device is designed and characterized. The device morphology and roughness were evaluated by means of scanning electron and atomic force microscopy.
Hazem K. Khanfar, A. F. Qasrawi, Yasmeen Kh. Ghannam   +2 more
doaj   +1 more source

Inter-grain tunneling in the half-metallic double-perovskites Sr$_2$BB'O$_6$ (BB'-- FeMo, FeRe, CrMo, CrW, CrRe

, 2013
The zero-field conductivities ($\sigma$) of the polycrystaline title materials, are governed by inter-grain transport. In the majority of cases their $\sigma$(T) can be described by the "fluctuation induced tunneling" model.
Chashka, K. B., Fisher, B., Genossar, J., Patlagan, L., Reisner, G. M.   +4 more
core   +1 more source

Transistor‐Level Activation Functions via Two‐Gate Designs: From Analog Sigmoid and Gaussian Control to Real‐Time Hardware Demonstrations

Advanced Materials, EarlyView.
Screen gate‐based transistors are presented, enabling tunable analog sigmoid and Gaussian activations. The SA‐transistor improves MRI classification accuracy, while the GA‐transistor supports precise Gaussian kernel tuning for forecasting. Both functions are implemented in a single device, offering compact, energy‐efficient analog AI processing ...
Junhyung Cho, Youngmin Han, Won Woo Lee, Youngwoo Yoo, Kannan Udaya Mohanan, Chang‐Hyun Kim, Junhwan Choi, Young‐Joon Kim, Wonjun Shin, Hocheon Yoo   +9 more
wiley   +1 more source

Contact Engineering of Trilayer Black Phosphorus With Scandium and Gold

IEEE Journal of the Electron Devices Society, 2019
High contact resistance keeps black phosphorus (BP) from fully wielding its excellent material property. Using first-principles calculations, we analyze the interfacial binding behavior and the impact of binding on the other layers of a trilayer BP.
Yi-Chia Tsai, Blanka Magyari-Kope, Yiming Li, Seiji Samukawa, Yoshio Nishi, Simon M. Sze   +5 more
doaj   +1 more source