Results 251 to 260 of about 104,391 (313)

Peak Width Analysis of Current–Voltage Characteristics of Triple-Barrier Resonant Tunneling Diodes

Japanese Journal of Applied Physics, 2000
We studied the peak width of current vs voltage (I–V) characteristics of triple-barrier resonant tunneling diodes (TBRTDs) experimentally and theoretically. A GaInAs/InP TBRTD was fabricated by organo metallic vapor phase epitaxy (OMVPE). A theory of I–V characteristics of TBRTDs was developed by taking the structural inhomogeneity ...
M. Nagase, M. Suhara, Y. Miyamoto, K. Furuya   +3 more
openaire   +2 more sources

Dependence of Resonant Interband Tunneling Current on Barrier and Well Width in InAs/AlSb/GaSb/AlSb/InAs Double-Barrier Structures

Extended Abstracts of the 1996 International Conference on Solid State Devices and Materials, 1996
Dependence of the peak current densities (I p) on AlSb barrier and GaSb well widths (L b and L w) in InAs/AlSb/ GaSb/AlSb/InAs double-barrier resonant interband tunneling diodes was systematically investigated. We found that I p increases exponentially and reaches 7.5×
Hiroto Kitabayashi Hiroto Kitabayashi, Takao Waho Takao Waho, Masafumi Yamamoto Masafumi Yamamoto   +2 more
openaire   +2 more sources

Level width of a quasibound state in a double-barrier parabolic-well resonant tunneling structure

Zeitschrift für Physik B Condensed Matter, 1997
Taking exact Airy functions and Hermitian functions as envelope functions, we investigate in detail the level width of a quasibound state for electrons coherent resonant tunneling through symmetric and asymmetric double-barrier parabolic-well resonant tunneling structures (DBRT) with the transfer-matrix formalism.
Yong Guo, Binglin Gu, Wenhui Duan
openaire   +2 more sources

Correlation between Barrier Width, Barrier Height, and DC Bias Voltage Dependences on the Magnetoresistance Ratio in Ir–Mn Exchange Biased Single and Double Tunnel Junctions

Japanese Journal of Applied Physics, 2000
Dual spin-valve-type double tunnel junctions (DTJs) of Ir–Mn/CoFe/AlO x /Co90Fe10/AlO x /CoFe/Ir–Mn and spin-valve-type single tunnel junctions (STJs) of Ir–Mn/CoFe/AlO x /CoFe/Ni–Fe were fabricated using an ultrahigh vacuum ...
Yoshiaki Saito, Minoru Amano, Kentaro Nakajima, Shigeki Takahashi, Masayuki Sagoi, Koichiro Inomata   +5 more
openaire   +2 more sources

Effects of tunneling barrier width on the electrical characteristic in Si-QD LEDs

Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials, 2010
T. Y. Kim, N. M. Park, C. J. Choi, C. Huh, C. G. Ahn, G. Y. Sung, I. K. You, M. Suemitsu   +7 more
openaire   +2 more sources

Concept for a fractional energy barrier tunneling junction

Applied Physics Letters, 2023
In general, the tunnel current in field emission tunneling junctions is determined by the barrier height under an applied electric field. Introducing an alternative way to modulate the tunnel current other than tuning the barrier height is important for ...
Yicong Chen, Dong‐Keun Ki, Zhibing Li, Jun Chen   +3 more
semanticscholar   +1 more source

Giant ferroelectric modulation of barrier height and width in multiferroic tunnel junctions

Physical Review B, 2021
The high tunneling electroresistance (TER) effect, generally caused by ferroelectric (FE)-modulated barrier height or width, is essential for the applications of multiferroic tunnel junctions in data storage. It is traditionally obtained by distinct electrical screening lengths of electrodes. Interface engineering can enhance the TER effect further. In
L. N. Jiang, Yun-Peng Wang, W. Z. Chen, X. F. Han   +3 more
openaire   +1 more source

Fermi Velocity Modulation Induced Low‐Bias Negative Differential Resistance in Graphene Double Barrier Resonant Tunneling diode

Annals of Physics, 2021
Negative differential resistance (NDR) devices are adequate candidates for the functional devices applicable to the next‐generation integrated circuit technology so‐called “Beyond CMOS.” Here, a graphene velocity‐modulation‐barrier resonant‐tunneling ...
S. M. Sattari‐Esfahlan, H. Ilatikhameneh, J. Fouladi-Oskouei   +2 more
semanticscholar   +1 more source

A New Tunneling Barrier Width Model of the Switching Mechanism in Hafnium Oxide-Based Resistive Random Access Memory

Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials, 2010
Y. H. Tseng, S. S. Chung, S. Shin, S. S. M. Kang, H. Y. Lee, M. J. Tsai   +5 more
openaire   +2 more sources

Decay widths for double-barrier resonant tunneling

Journal of Applied Physics, 1991
Calculations of the decay width and the partial decay widths for double-barrier resonant tunneling structures are discussed using a description of resonances in terms of the complex energy poles of the transmission amplitude of the system and comparing it with the corresponding Wentzel–Kramers–Brillouin approximations.
Gastón García-Calderón, Alberto Rubio, Roberto Romo   +2 more
openaire   +1 more source